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Nitride-based concentrator solar cells grown on Si substrates

Solar energy materials and solar cells, 2013-10, Vol.117, p.54-58

2013

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The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

Applied physics letters, 2014-01, Vol.104 (3)

2014

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N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator

Microelectronics and reliability, 2015-01, Vol.55 (1), p.48-51

2015

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Composition dependent Raman scattering of ZnSe1−xOx

Solid state communications, 2013-10, Vol.172, p.20-23

2013

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Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs

Electronics letters, 2013-08, Vol.49 (16), p.1026-1028

2013

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Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

Applied physics letters, 2003-12, Vol.83 (23), p.4845-4847

2003

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Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors

Applied physics letters, 2012-08, Vol.101 (7), p.73507

2012

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Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance

IEEE photonics technology letters, 2005-08, Vol.17 (8), p.1722-1724

2005

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MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors

Applied physics letters, 2004-04, Vol.84 (15), p.2919-2921

2004

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Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-05, Vol.29 (3)

2011

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Phosphor-Free GaN-Based Transverse Junction White-Light Light-Emitting Diodes With Regrown n-Type Regions

IEEE photonics technology letters, 2008-03, Vol.20 (6), p.449-451

2008

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E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development

Solid-state electronics, 2010-05, Vol.54 (5), p.505-508

2010

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Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

Journal of applied physics, 2013-11, Vol.114 (20)

2013

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Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

Solid-state electronics, 2010-04, Vol.54 (4), p.475-478

2010

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Imaging resonant modes in photonic crystal nanocavity by atomic force microscope nano-oxidation

Applied physics letters, 2011-05, Vol.98 (19), p.191110-191110-3

2011

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GaN electronics for high power, high temperature applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.227-231

2001

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Linear Cascade Arrays of GaN-Based Green Light-Emitting Diodes for High-Speed and High-Power Performance

IEEE photonics technology letters, 2007-09, Vol.19 (18), p.1368-1370

2007

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Vertical and lateral GaN rectifiers on free-standing GaN substrates

Applied physics letters, 2001-09, Vol.79 (10), p.1555-1557

2001

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Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2005-11, Vol.409 (1), p.340-347

2005

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Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

Applied physics letters, 2000-02, Vol.76 (6), p.691-693

2000

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Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light

IEEE photonics technology letters, 2006-12, Vol.18 (24), p.2593-2595

2006

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Directional Coupler Formed by Photonic Crystal InAlGaAs Nanorods

Journal of lightwave technology, 2008-03, Vol.26 (5), p.488-491

2008

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Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2008-02, Vol.55 (2), p.489-493

2008

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Optical properties of ZnSe1―xOx epilayers

Electronics letters, 2009, Vol.45 (24), p.1267-1269

2009

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Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

Applied physics letters, 2000-03, Vol.76 (12), p.1567-1569

2000

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Nitride-based concentrator solar cells grown on Si substrates

The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator

Composition dependent Raman scattering of ZnSe1−xOx

Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs

Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors

Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance

MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors

Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Phosphor-Free GaN-Based Transverse Junction White-Light Light-Emitting Diodes With Regrown n-Type Regions

E-beam-evaporated Al2O3 for InAs/AlSb metal-oxide-semiconductor HEMT development

Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

Imaging resonant modes in photonic crystal nanocavity by atomic force microscope nano-oxidation

GaN electronics for high power, high temperature applications

Linear Cascade Arrays of GaN-Based Green Light-Emitting Diodes for High-Speed and High-Power Performance

Vertical and lateral GaN rectifiers on free-standing GaN substrates

Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors

Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light

Directional Coupler Formed by Photonic Crystal InAlGaAs Nanorods

Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors

Optical properties of ZnSe1―xOx epilayers

Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

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