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Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

IEEE electron device letters, 2019-10, Vol.40 (10), p.1662-1665

2019

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Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer

IEEE electron device letters, 2019-02, Vol.40 (2), p.174-176

2019

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Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiO } /Si Substrates Using Area-Selective CVD Technology

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5381-5386

2019

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High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts

IEEE electron device letters, 2021-02, Vol.42 (2), p.272-275

2021

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High-performance monolayer MoS2 nanosheet GAA transistor

Nanotechnology, 2024-03, Vol.35 (12)

2024

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Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL Treatment

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1776-1780

2022

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High-Accuracy Deep Neural Networks Using a Contralateral-Gated Analog Synapse Composed of Ultrathin MoS₂ nFET and Nonvolatile Charge-Trap Memory

IEEE electron device letters, 2020-11, Vol.41 (11), p.1649-1652

2020

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First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate

2019 Symposium on VLSI Technology, 2019, p.T244-T245

2019

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Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

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Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

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Electrical Characteristics of Si 0.8 Ge 0.2 p-MOSFET With TMA Pre-Doping and NH 3 Plasma IL Treatment

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1776-1780

2022

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Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS 2 Films Using the Transmission Line Measurement

IEEE electron device letters, 2019-10, Vol.40 (10), p.1662-1665

2019

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High-performance monolayer MoS 2 nanosheet GAA transistor

Nanotechnology, 2024-03, Vol.35 (12), p.125204

2024

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Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS2

2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019, p.191-193

2019

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Demonstration of HfO 2 -Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer

IEEE electron device letters, 2019-02, Vol.40 (2), p.174-176

2019

Volltextzugriff (PDF)

High On-State Current in Chemical Vapor Deposited Monolayer MoS 2 nFETs With Sn Ohmic Contacts

IEEE electron device letters, 2021-02, Vol.42 (2), p.272-275

2021

Volltextzugriff (PDF)

Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS 2 Channel Directly Grown on SiO$_{{x}}$ /Si Substrates Using Area-Selective CVD Technology

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5381-5386

2019

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High-performance monolayer MoS2nanosheet GAA transistor

Nanotechnology, 2024-01, Vol.35 (12)

2024

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High-performance monolayer MoS 2 nanosheet GAA transistor

Nanotechnology, 2023-12

2023

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Study of the Band Alignment between Atomic-Layer-Deposited High-κ Dielectrics and MoS 2 Film

ECS journal of solid state science and technology, 2018, Vol.7 (4), p.N46-N50

2018

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Pinning-Free Edge Contact Monolayer MoS2 FET

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.3.3.1-3.3.4

2020

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First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length

2022 International Electron Devices Meeting (IEDM), 2022, p.34.5.1-34.5.4

2022

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Switchable NAND and NOR Logic Computing in Single Triple-Gate Monolayer MoS2 n-FET

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.40.3.1-40.3.4

2020

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Computation Offloading and User-Clustering Game in Multi-Channel Cellular Networks for Mobile Edge Computing

Sensors (Basel, Switzerland), 2023-01, Vol.23 (3), p.1155

2023

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Thrombomodulin Regulates Keratinocyte Differentiation and Promotes Wound Healing

Journal of investigative dermatology, 2013-06, Vol.133 (6), p.1638-1645

2013

Volltextzugriff (PDF)

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Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer

Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiO } /Si Substrates Using Area-Selective CVD Technology

High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts

High-performance monolayer MoS2 nanosheet GAA transistor

Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL Treatment

High-Accuracy Deep Neural Networks Using a Contralateral-Gated Analog Synapse Composed of Ultrathin MoS₂ nFET and Nonvolatile Charge-Trap Memory

First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate

Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel

Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact

Electrical Characteristics of Si 0.8 Ge 0.2 p-MOSFET With TMA Pre-Doping and NH 3 Plasma IL Treatment

Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS 2 Films Using the Transmission Line Measurement

High-performance monolayer MoS 2 nanosheet GAA transistor

Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS2

Demonstration of HfO 2 -Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer

High On-State Current in Chemical Vapor Deposited Monolayer MoS 2 nFETs With Sn Ohmic Contacts

Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS 2 Channel Directly Grown on SiO$_{{x}}$ /Si Substrates Using Area-Selective CVD Technology

High-performance monolayer MoS2nanosheet GAA transistor

High-performance monolayer MoS 2 nanosheet GAA transistor

Study of the Band Alignment between Atomic-Layer-Deposited High-κ Dielectrics and MoS 2 Film

Pinning-Free Edge Contact Monolayer MoS2 FET

First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length

Switchable NAND and NOR Logic Computing in Single Triple-Gate Monolayer MoS2 n-FET

Computation Offloading and User-Clustering Game in Multi-Channel Cellular Networks for Mobile Edge Computing

Thrombomodulin Regulates Keratinocyte Differentiation and Promotes Wound Healing

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