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On the origin of enhanced sensitivity in nanoscale FET-based biosensors

Proceedings of the National Academy of Sciences - PNAS, 2014-04, Vol.111 (14), p.5111-5116

2014

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Stochastic Variability in Silicon Double-Gate Lateral Tunnel Field-Effect Transistors

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.84-91

2013

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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.547-556

2008

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The impact of dementia daycare service cessation due to COVID‐19 pandemic

International journal of geriatric psychiatry, 2022-01, Vol.37 (1), p.n/a

2022

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430 - The Puzzled and Puzzling Self: Self-Perception of People With Dementia in the Residential Care Homes of Hong Kong

International psychogeriatrics, 2020-10, Vol.32 (S1), p.146-146

Man, Kenny Chui Chi

2020

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Awareness of meaning and quest for meaning: The mechanisms between future orientation and prosociality among youth during pandemic

Frontiers in psychology, 2022-12, Vol.13, p.1046803-1046803

2022

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Nanoscale germanium MOS Dielectrics-part I: germanium oxynitrides

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1501-1508

2006

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Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs

IEEE electron device letters, 2012-06, Vol.33 (6), p.767-769

2012

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A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors

IEEE electron device letters, 2012-10, Vol.33 (10), p.1468-1470

2012

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Device- and Circuit-Level Variability Caused by Line Edge Roughness for Sub-32-nm FinFET Technologies

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2057-2063

2012

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School Adjustment, Social Support, and Mental Health of Mainland Chinese College Students in Hong Kong

Journal of college student development, 2017, Vol.58 (1), p.88-100

2017

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Optimization of the Sensitivity of FET-Based Biosensors via Biasing and Surface Charge Engineering

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.3104-3110

2012

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Interactions Between Line Edge Roughness and Random Dopant Fluctuation in Nonplanar Field-Effect Transistor Variability

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3277-3284

2013

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Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

Journal of applied physics, 2004-09, Vol.96 (6), p.3467-3472

2004

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Junctionless Silicon and In0.53Ga0.47As Transistors-Part II: Device Variability From Random Dopant Fluctuation

IEEE transactions on electron devices, 2015-10, Vol.62 (10), p.3208-3214

2015

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Carbon-ionogel supercapacitors for integrated microelectronics

Nanotechnology, 2016-01, Vol.27 (3), p.035204-035204

2016

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Electrostatic Modeling and Insights Regarding Multigate Lateral Tunneling Transistors

IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2712-2720

2013

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Variability of Inversion-Mode and Junctionless FinFETs due to Line Edge Roughness

IEEE electron device letters, 2011-11, Vol.32 (11), p.1489-1491

2011

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Tunneling Negative Differential Resistance-Assisted STT-RAM for Efficient Read and Write Operations

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.121-129

2017

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Engineering finger-operated peristaltic pumps

Microfluidics and nanofluidics, 2018-01, Vol.22 (1), Article 14

2018

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Editorial: Immune Monitoring Responses in Renal Autoimmune Diseases

Frontiers in immunology, 2021-06, Vol.12, p.722791-722791

2021

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Gate-Induced Source Tunneling FET (GISTFET)

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2390-2395

2015

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Junctionless Silicon and In0.53Ga0.47As Transistors-Part I: Nominal Device Evaluation With Quantum Simulations

IEEE transactions on electron devices, 2015-10, Vol.62 (10), p.3199-3207

2015

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Germanium MOS capacitors incorporating ultrathin high- Kappa gate dielectric

IEEE electron device letters, 2002-08, Vol.23 (8), p.473-475

2002

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Transient measurement approaches to differentiate non-specific binding in affinity-based bioanalytical assays

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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On the origin of enhanced sensitivity in nanoscale FET-based biosensors

Stochastic Variability in Silicon Double-Gate Lateral Tunnel Field-Effect Transistors

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

The impact of dementia daycare service cessation due to COVID‐19 pandemic

430 - The Puzzled and Puzzling Self: Self-Perception of People With Dementia in the Residential Care Homes of Hong Kong

Awareness of meaning and quest for meaning: The mechanisms between future orientation and prosociality among youth during pandemic

Nanoscale germanium MOS Dielectrics-part I: germanium oxynitrides

Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs

A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors

Device- and Circuit-Level Variability Caused by Line Edge Roughness for Sub-32-nm FinFET Technologies

School Adjustment, Social Support, and Mental Health of Mainland Chinese College Students in Hong Kong

Optimization of the Sensitivity of FET-Based Biosensors via Biasing and Surface Charge Engineering

Interactions Between Line Edge Roughness and Random Dopant Fluctuation in Nonplanar Field-Effect Transistor Variability

Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

Junctionless Silicon and In0.53Ga0.47As Transistors-Part II: Device Variability From Random Dopant Fluctuation

Carbon-ionogel supercapacitors for integrated microelectronics

Electrostatic Modeling and Insights Regarding Multigate Lateral Tunneling Transistors

Variability of Inversion-Mode and Junctionless FinFETs due to Line Edge Roughness

Tunneling Negative Differential Resistance-Assisted STT-RAM for Efficient Read and Write Operations

Engineering finger-operated peristaltic pumps

Editorial: Immune Monitoring Responses in Renal Autoimmune Diseases

Gate-Induced Source Tunneling FET (GISTFET)

Junctionless Silicon and In0.53Ga0.47As Transistors-Part I: Nominal Device Evaluation With Quantum Simulations

Germanium MOS capacitors incorporating ultrathin high- Kappa gate dielectric

Transient measurement approaches to differentiate non-specific binding in affinity-based bioanalytical assays

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