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Synthesis of 1D, 2D, and 3D ZnO Polycrystalline Nanostructures Using the Sol-Gel Method

Journal of nanotechnology, 2012-01, Vol.2012, p.1-8

2012

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Comprehensive study of a Pd–GaAs high electron mobility transistor (HEMT)-based hydrogen sensor

Sensors and actuators. B, Chemical, 2007-03, Vol.122 (1), p.81-88

2007

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Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT

IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.1-8

2006

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Temperature-dependent characteristics of polysilicon and diffused resistors

IEEE transactions on electron devices, 2003-05, Vol.50 (5), p.1413-1415

2003

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Characteristics of Pd/InGaP Schottky diodes hydrogen sensors

IEEE sensors journal, 2004-02, Vol.4 (1), p.72-79

2004

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Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

IEEE transactions on electron devices, 2002-10, Vol.49 (10), p.1687-1693

2002

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Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2532-2539

2003

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Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode

Sensors and actuators. B, Chemical, 2003-09, Vol.94 (2), p.145-151

2003

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Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)

IEEE transactions on electron devices, 2003-08, Vol.50 (8), p.1717-1723

2003

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A new InP-InGaAs HBT with a superlattice-collector structure

IEEE electron device letters, 2004-05, Vol.25 (5), p.244-246

2004

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A novel InP/InGaAs TEBT for ultralow current operations

IEEE electron device letters, 2003-03, Vol.24 (3), p.126-128

2003

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Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)

Semiconductor science and technology, 2004-01, Vol.19 (1), p.87-92

2004

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DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

IEEE transactions on electron devices, 2003-04, Vol.50 (4), p.874-879

2003

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A double-barrier-emitter triangular-barrier optoelectronic switch

IEEE journal of quantum electronics, 2004-04, Vol.40 (4), p.413-419

2004

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On the high-performance n +-GaAs/p +-InGaP/n-GaAs high-barrier gate camel-like HFETs

Solid-state electronics, 2003, Vol.47 (1), p.19-24

2003

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A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.516-518

2003

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Characterization of polysilicon resistors in sub-0.25 μm CMOS ULSI applications

IEEE electron device letters, 2001-07, Vol.22 (7), p.318-320

2001

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Synthesis of ZnO Polycrystalline Flakes Using Sol-Gel Method

Advanced materials research, 2011, Vol.320, p.135-139

2011

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A new Pd-oxide-Al0.3Ga0.7As MOS hydrogen sensor

IEEE electron device letters, 2003-06, Vol.24 (6), p.390

2003

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52.1: Transparent AMOLED and its Integration with an Electrophoretic Display

SID International Symposium Digest of technical papers, 2012-06, Vol.43 (1), p.698-701

2012

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A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-μm CMOS devices applications

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1740-1742

2001

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A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor

Semiconductor science and technology, 2003-07, Vol.18 (7), p.615-619

2003

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Hydrogen sensing characteristics of Pd- and Pt-Al0.3Ga0.7As metal–semiconductor (MS) Schottky diodes

Semiconductor science and technology, 2004-06, Vol.19 (6), p.778-782

2004

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The Effects of Solvents to ZnO:Al Transparent Conductive Thin Films Synthesized by Sol-Gel Method

Advanced materials research, 2011, Vol.320, p.124-129

2011

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Characteristics of a New BBOS With an AlGaAs– $delta (rm n^+)$ –GaAs–InAlGaP Collector Structure

IEEE transactions on electron devices, 2004-04, Vol.51 (4), p.542-547

2004

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Synthesis of 1D, 2D, and 3D ZnO Polycrystalline Nanostructures Using the Sol-Gel Method

Comprehensive study of a Pd–GaAs high electron mobility transistor (HEMT)-based hydrogen sensor

Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT

Temperature-dependent characteristics of polysilicon and diffused resistors

Characteristics of Pd/InGaP Schottky diodes hydrogen sensors

Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes

Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode

Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)

A new InP-InGaAs HBT with a superlattice-collector structure

A novel InP/InGaAs TEBT for ultralow current operations

Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)

DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

A double-barrier-emitter triangular-barrier optoelectronic switch

On the high-performance n +-GaAs/p +-InGaP/n-GaAs high-barrier gate camel-like HFETs

A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications

Characterization of polysilicon resistors in sub-0.25 μm CMOS ULSI applications

Synthesis of ZnO Polycrystalline Flakes Using Sol-Gel Method

A new Pd-oxide-Al0.3Ga0.7As MOS hydrogen sensor

52.1: Transparent AMOLED and its Integration with an Electrophoretic Display

A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-μm CMOS devices applications

A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor

Hydrogen sensing characteristics of Pd- and Pt-Al0.3Ga0.7As metal–semiconductor (MS) Schottky diodes

The Effects of Solvents to ZnO:Al Transparent Conductive Thin Films Synthesized by Sol-Gel Method

Characteristics of a New BBOS With an AlGaAs– $delta (rm n^+)$ –GaAs–InAlGaP Collector Structure

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