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Nanosized-Metal-Grain-Pattern-Dependent Threshold-Voltage Models for the Vertically Stacked Multichannel Gate-All-Around Si Nanosheet MOSFETs and Their Applications in Circuit Simulation

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.350-358

2024

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Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer

Nanoscale research letters, 2022-01, Vol.17 (1), p.16-16, Article 16

2022

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Measuring the wall depletion length of nanoconfined DNA

The Journal of chemical physics, 2018-09, Vol.149 (10), p.104901

2018

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Numerical Simulation of Thermal Conductivity of SiNW-SiGe0.3 Composite for Thermoelectric Applications

IEEE transactions on electron devices, 2020-05, Vol.67 (5), p.2088-2092

2020

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On the energy band of neutral-beam etched Si/Si0.7Ge0.3 nanopillars

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB)

2021

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Extension distribution for DNA confined in a nanochannel near the Odijk regime

The Journal of chemical physics, 2019-09, Vol.151 (11), p.114903-114903

2019

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Electronic Structures of Monolayer Binary and Ternary 2D Materials: MoS2, WS2, Mo1−xCrxS2, and W1−xCrxS2 Using Density Functional Theory Calculations

Nanomaterials (Basel, Switzerland), 2023-01, Vol.13 (1), p.68

2023

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Prescription Patterns and Predisposing Factors of Benzodiazepine and Z‐Hypnotic Use During Pregnancy: A Nationwide Cohort Study

Pharmacoepidemiology and drug safety, 2024-06, Vol.33 (6), p.e5847-n/a

2024

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Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits

Materials, 2019-05, Vol.12 (9), p.1492

2019

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Fabrication and simulation of neutral-beam-etched silicon nanopillars

Vacuum, 2020-11, Vol.181, p.109577, Article 109577

2020

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Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

IEEE open journal of nanotechnology, 2024, Vol.5, p.9-16

2024

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Design and Implementation of Efficient Video Stabilization Engine Using Maximum a Posteriori Estimation and Motion Energy Smoothing Approach

IEEE transactions on circuits and systems for video technology, 2012-06, Vol.22 (6), p.817-830

2012

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Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials

IEEE open journal of nanotechnology, 2021, Vol.2, p.148-152

2021

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Sequence-Dependent Persistence Length of Long DNA

Physical review letters, 2017-11, Vol.119 (22), p.227802-227802, Article 227802

2017

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Study on Oxidation State Dependent Electrocatalytic Ability for I−/I3− Redox Reaction of Reduced Graphene Oxides

Electroanalysis (New York, N.Y.), 2014-01, Vol.26 (1), p.147-155

2014

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Artificial Neural Network-Based Modeling for Estimating the Effects of Various Random Fluctuations on DC/Analog/RF Characteristics of GAA Si Nanosheet FETs

IEEE transactions on microwave theory and techniques, 2022-11, Vol.70 (11), p.4835-4848

2022

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Benzodiazepine Use During Pregnancy and Risk of Miscarriage

JAMA psychiatry (Chicago, Ill.), 2024-04, Vol.81 (4), p.366

2024

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Facile Synthesis of Boron-doped Graphene Nanosheets with Hierarchical Microstructure at Atmosphere Pressure for Metal-free Electrochemical Detection of Hydrogen Peroxide

Electrochimica acta, 2015-08, Vol.172, p.52-60

2015

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A coral-like film of Ni@NiS with core–shell particles for the counter electrode of an efficient dye-sensitized solar cell

Journal of materials chemistry. A, Materials for energy and sustainability, 2014-01, Vol.2 (16), p.5816-5824

2014

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Erratum: “Measuring the wall depletion length of nanoconfined DNA” [J. Chem. Phys. 149, 104901 (2018)]

The Journal of chemical physics, 2019-06, Vol.150 (21), p.219901-219901

2019

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Variability of Threshold Voltage Induced by Work-Function Fluctuation and Random Dopant Fluctuation on Gate-All-Around Nanowire nMOSFETs

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019, p.1-4

2019

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Thermal Conductivity of Silicon Nanowire Using Landauer Approach for Thermoelectric Applications

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019, p.1-4

2019

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Automatic Device Model Parameter Extractions via Hybrid Intelligent Methodology

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.355-358

2020

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Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2023, p.1-3

2023

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Preparing core–shell structure of ZnO@TiO2 nanowires through a simple dipping–rinse–hydrolyzation process as the photoanode for dye-sensitized solar cells

Nano energy, 2013-09, Vol.2 (5), p.609-621

2013

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Nanosized-Metal-Grain-Pattern-Dependent Threshold-Voltage Models for the Vertically Stacked Multichannel Gate-All-Around Si Nanosheet MOSFETs and Their Applications in Circuit Simulation

Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer

Measuring the wall depletion length of nanoconfined DNA

Numerical Simulation of Thermal Conductivity of SiNW-SiGe0.3 Composite for Thermoelectric Applications

On the energy band of neutral-beam etched Si/Si0.7Ge0.3 nanopillars

Extension distribution for DNA confined in a nanochannel near the Odijk regime

Electronic Structures of Monolayer Binary and Ternary 2D Materials: MoS2, WS2, Mo1−xCrxS2, and W1−xCrxS2 Using Density Functional Theory Calculations

Prescription Patterns and Predisposing Factors of Benzodiazepine and Z‐Hypnotic Use During Pregnancy: A Nationwide Cohort Study

Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits

Fabrication and simulation of neutral-beam-etched silicon nanopillars

Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

Design and Implementation of Efficient Video Stabilization Engine Using Maximum a Posteriori Estimation and Motion Energy Smoothing Approach

Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials

Sequence-Dependent Persistence Length of Long DNA

Study on Oxidation State Dependent Electrocatalytic Ability for I−/I3− Redox Reaction of Reduced Graphene Oxides

Artificial Neural Network-Based Modeling for Estimating the Effects of Various Random Fluctuations on DC/Analog/RF Characteristics of GAA Si Nanosheet FETs

Benzodiazepine Use During Pregnancy and Risk of Miscarriage

Facile Synthesis of Boron-doped Graphene Nanosheets with Hierarchical Microstructure at Atmosphere Pressure for Metal-free Electrochemical Detection of Hydrogen Peroxide

A coral-like film of Ni@NiS with core–shell particles for the counter electrode of an efficient dye-sensitized solar cell

Erratum: “Measuring the wall depletion length of nanoconfined DNA” [J. Chem. Phys. 149, 104901 (2018)]

Variability of Threshold Voltage Induced by Work-Function Fluctuation and Random Dopant Fluctuation on Gate-All-Around Nanowire nMOSFETs

Thermal Conductivity of Silicon Nanowire Using Landauer Approach for Thermoelectric Applications

Automatic Device Model Parameter Extractions via Hybrid Intelligent Methodology

Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes

Preparing core–shell structure of ZnO@TiO2 nanowires through a simple dipping–rinse–hydrolyzation process as the photoanode for dye-sensitized solar cells

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