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Prediction Model of Kinetic Energy Conversion of Tandem Dual-Oscillator Based on Flow-Induced Vibration Experiment

China ocean engineering, 2022-10, Vol.36 (5), p.707-719

2022

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Gas Sensor Based on Surface Enhanced Raman Scattering

Materials, 2021-01, Vol.14 (2), p.388

2021

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Electrochemically driven dual bipolar resistive switching in LaNiO3/SmNiO3/Nb:SrTiO3 heterostructures fabricated through selective area epitaxy

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-05, Vol.10 (19), p.7707-7716

2022

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High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O as Gate Dielectric

IEEE electron device letters, 2021-03, Vol.42 (3), p.339-342

2021

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Unravelling the role of oxygen vacancies on the current transport mechanisms in all-perovskite nickelate/titanate heterojunctions for nonvolatile memory applications

Journal of applied physics, 2022-10, Vol.132 (13)

2022

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High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering

Applied surface science, 2021-04, Vol.544, p.148656, Article 148656

2021

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High-Mobility Pentacene Organic Thin-Film Transistor with LaxNb(1-x)Oy Gate Dielectric Fabricated on Vacuum Tape

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1716-1722

2017

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Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors

IEEE electron device letters, 2018-07, Vol.39 (7), p.963-966

2018

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Biodegradable transient resistive random-access memory based on MoO3/MgO/MoO3 stack

Applied physics letters, 2019-12, Vol.115 (24)

2019

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A 1T1M Programmable Artificial Spiking Neuron via the Integration of FeFET and NbOₓ Mott Memristor

IEEE electron device letters, 2024-07, Vol.45 (7), p.1169-1172

2024

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An Artificial Spiking Afferent Neuron System Achieved by 1M1S for Neuromorphic Computing

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2346-2352

2022

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Effects of CaO Interlayer on the Performance of Biodegradable Transient MgO-Based Resistive Random Access Memory

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.481-486

2020

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A Study on Pentacene Organic Thin-Film Transistor With Different Gate Materials on Various Substrates

IEEE electron device letters, 2017-06, Vol.38 (6), p.744-747

2017

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Characterization and Modelling of Flexible VO2 Mott Memristor for the Artificial Spiking Warm Receptor

Advanced materials interfaces, 2022-07, Vol.9 (19), p.n/a

2022

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Configurable NbOx Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network

Advanced electronic materials, 2023-06, Vol.9 (6), p.n/a

2023

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A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2313-2319

2015

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High-Performance Pentacene Thin-Film Transistor With High- \kappa HfLaON as Gate Dielectric

IEEE electron device letters, 2013-11, Vol.34 (11), p.1397-1399

2013

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Three new iridoid glycosides isolated from the traditional herb Siphonostegia chinensis with NF-κB inhibitory activity

Phytochemistry letters, 2017-12, Vol.22, p.261-265

2017

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High-mobility pentacene thin-film transistor by using LaxTa(1−x)Oy as gate dielectric

Organic electronics, 2014-10, Vol.15 (10), p.2499-2504

2014

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Detent-Force Minimization of Double-Sided Permanent Magnet Linear Synchronous Motor by Shifting One of the Primary Components

IEEE transactions on industrial electronics (1982), 2020-01, Vol.67 (1), p.180-191

2020

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High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf 0.13 La 0.87 O as Gate Dielectric

IEEE electron device letters, 2021-03, Vol.42 (3), p.339-342

2021

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High-performance pentacene thin-film transistor with ZrLaO gate dielectric passivated by fluorine incorporation

Organic electronics, 2013-11, Vol.14 (11), p.2973-2979

2013

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Multilevel resistive random access memory achieved by MoO3/Hf/MoO3 stack and its application in tunable high-pass filter

Nanotechnology, 2021-09, Vol.32 (38)

2021

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A bioinspired flexible artificial mechanoreceptor based on VO2 insulator-metal transition memristor

Journal of alloys and compounds, 2022-08, Vol.911, p.165096, Article 165096

2022

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High-Mobility Pentacene Organic Thin-Film Transistor with La x Nb (1– x ) O y Gate Dielectric Fabricated on Vacuum Tape

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1716-1722

2017

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Prediction Model of Kinetic Energy Conversion of Tandem Dual-Oscillator Based on Flow-Induced Vibration Experiment

Gas Sensor Based on Surface Enhanced Raman Scattering

Electrochemically driven dual bipolar resistive switching in LaNiO3/SmNiO3/Nb:SrTiO3 heterostructures fabricated through selective area epitaxy

High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O as Gate Dielectric

Unravelling the role of oxygen vacancies on the current transport mechanisms in all-perovskite nickelate/titanate heterojunctions for nonvolatile memory applications

High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering

High-Mobility Pentacene Organic Thin-Film Transistor with LaxNb(1-x)Oy Gate Dielectric Fabricated on Vacuum Tape

Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors

Biodegradable transient resistive random-access memory based on MoO3/MgO/MoO3 stack

A 1T1M Programmable Artificial Spiking Neuron via the Integration of FeFET and NbOₓ Mott Memristor

An Artificial Spiking Afferent Neuron System Achieved by 1M1S for Neuromorphic Computing

Effects of CaO Interlayer on the Performance of Biodegradable Transient MgO-Based Resistive Random Access Memory

A Study on Pentacene Organic Thin-Film Transistor With Different Gate Materials on Various Substrates

Characterization and Modelling of Flexible VO2 Mott Memristor for the Artificial Spiking Warm Receptor

Configurable NbOx Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network

A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

High-Performance Pentacene Thin-Film Transistor With High- \kappa HfLaON as Gate Dielectric

Three new iridoid glycosides isolated from the traditional herb Siphonostegia chinensis with NF-κB inhibitory activity

High-mobility pentacene thin-film transistor by using LaxTa(1−x)Oy as gate dielectric

Detent-Force Minimization of Double-Sided Permanent Magnet Linear Synchronous Motor by Shifting One of the Primary Components

High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf 0.13 La 0.87 O as Gate Dielectric

High-performance pentacene thin-film transistor with ZrLaO gate dielectric passivated by fluorine incorporation

Multilevel resistive random access memory achieved by MoO3/Hf/MoO3 stack and its application in tunable high-pass filter

A bioinspired flexible artificial mechanoreceptor based on VO2 insulator-metal transition memristor

High-Mobility Pentacene Organic Thin-Film Transistor with La x Nb (1– x ) O y Gate Dielectric Fabricated on Vacuum Tape

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