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GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

Journal of physics. Condensed matter, 2004-07, Vol.16 (29), p.R961-R994

2004

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Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C

Physical review letters, 2002-09, Vol.89 (10), p.107203-107203, Article 107203

2002

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Magnetic and structural properties of Mn-implanted GaN

Applied physics letters, 2001-05, Vol.78 (22), p.3475-3477

2001

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Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

Applied physics letters, 2001-03, Vol.78 (12), p.1685-1687

2001

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Effects of two-dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

Applied physics letters, 1988-09, Vol.53 (11), p.995-997

1988

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Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Journal of electronic materials, 2006-04, Vol.35 (4), p.516-519

2006

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High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy

Applied physics letters, 2000-05, Vol.76 (20), p.2818-2820

2000

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Magnetic and structural properties of Co, Cr, V ion-implanted GaN

Journal of applied physics, 2003-04, Vol.93 (8), p.4512-4516

2003

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Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

Applied physics letters, 2001-06, Vol.78 (25), p.3980-3982

2001

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Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy

Journal of applied physics, 1985-01, Vol.57 (2), p.249-257

1985

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Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

Applied physics letters, 2003-12, Vol.83 (23), p.4845-4847

2003

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Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

Applied physics letters, 1998-12, Vol.73 (26), p.3893-3895

1998

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Semiconductor laser damage due to human-body-model electrostatic discharge

Journal of applied physics, 1993-08, Vol.74 (3), p.1510-1520

1993

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Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes

Applied physics letters, 1987-02, Vol.50 (7), p.413-415

1987

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Comparison of F2 plasma chemistries for deep etching of SiC

Journal of electronic materials, 2001-03, Vol.30 (3), p.202-206

2001

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High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

Journal of applied physics, 2002-07, Vol.92 (1), p.338-345

2002

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Ga2O3 films for electronic and optoelectronic applications

Journal of applied physics, 1995-01, Vol.77 (2), p.686-693

1995

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Use of ion implantation to facilitate the discovery and characterization of ferromagnetic semiconductors

Journal of applied physics, 2002-05, Vol.91 (10), p.7499-7501

2002

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Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate

Applied physics letters, 1991-04, Vol.58 (16), p.1704-1706

1991

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Structural and optical characterization of nonpolar GaN/AlN quantum wells

Applied physics letters, 2003-07, Vol.83 (4), p.653-655

2003

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Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy

Applied physics letters, 1987-04, Vol.50 (15), p.956-958

1987

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Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

Applied physics letters, 1986-07, Vol.49 (3), p.164-166

1986

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Chemical ordering in AlGaN alloys grown by molecular beam epitaxy

Applied physics letters, 2001-01, Vol.78 (4), p.463-465

2001

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Resonant optical nonlinearities from intersubband transitions in GaN/AlN quantum wells

Applied physics letters, 2003-07, Vol.83 (2), p.263-265

2003

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Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-05, Vol.20 (3), p.579-582

2002

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GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C

Magnetic and structural properties of Mn-implanted GaN

Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

Effects of two-dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy

Magnetic and structural properties of Co, Cr, V ion-implanted GaN

Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy

Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

Semiconductor laser damage due to human-body-model electrostatic discharge

Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes

Comparison of F2 plasma chemistries for deep etching of SiC

High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

Ga2O3 films for electronic and optoelectronic applications

Use of ion implantation to facilitate the discovery and characterization of ferromagnetic semiconductors

Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate

Structural and optical characterization of nonpolar GaN/AlN quantum wells

Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy

Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

Chemical ordering in AlGaN alloys grown by molecular beam epitaxy

Resonant optical nonlinearities from intersubband transitions in GaN/AlN quantum wells

Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC

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