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Supplier selection for outsourcing from the perspective of protecting crucial product knowledge

International journal of production research, 2013-03, Vol.51 (5), p.1508-1519

2013

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Business process modelling in small- to medium-sized enterprises

Industrial management + data systems, 2001-06, Vol.101 (4), p.144-152

2001

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Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process

Microelectronic engineering, 2015-11, Vol.147, p.330-334

2015

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Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high- κ dielectrics on Ge without interfacial layers

Solid-state electronics, 2010-09, Vol.54 (9), p.965-971

2010

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Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge

Journal of crystal growth, 2009-03, Vol.311 (7), p.2195-2198

2009

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Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric

Microelectronic engineering, 2012-03, Vol.91, p.89-92

2012

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Ge metal-oxide-semiconductor devices with Al 2O 3/Ga 2O 3(Gd 2O 3) as gate dielectric

Microelectronic engineering, 2012-03, Vol.91, p.89-92

2012

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Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium

Journal of crystal growth, 2009-03, Vol.311 (7), p.2187-2190

2009

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InGaAs and Ge MOSFETs with high κ dielectrics

Microelectronic engineering, 2011-04, Vol.88 (4), p.336-341

2011

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Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2O 3 on Ge

Journal of crystal growth, 2009, Vol.311 (7), p.2195-2198

2009

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Molecular beam epitaxy-grown Al 2O 3/HfO 2 high-κ dielectrics for germanium

Journal of crystal growth, 2009, Vol.311 (7), p.2187-2190

2009

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Depletion-mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric

Journal of crystal growth, 2007-04, Vol.301-302, p.1013-1016

2007

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Depletion-mode GaAs-based MOSFET with Ga 2O 3(Gd 2O 3) as a gate dielectric

Journal of crystal growth, 2007, Vol.301, p.1013-1016

2007

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High performance Ga2O3(Gd2O3)/Ge MOS devices without interfacial layers

2009 Proceedings of the European Solid State Device Research Conference, 2009, p.407-410

2009

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IEEE_Xplore

Service availability of a radio access telecommunications network

Quality and reliability engineering international, 1998-09, Vol.14 (5), p.365-370

1998

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Effect of propofol on the electrocorticogram in epileptic patients undergoing cortical resection

British journal of anaesthesia : BJA, 1999-02, Vol.82 (2), p.199-202

1999

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Design and operation of flexible manufacturing cells

Chu, L.K

1989

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Metal-oxide-semiconductor devices with UHV-Ga2O3(Gd2O3) on Ge(100)

2009 International Symposium on VLSI Technology, Systems, and Applications, 2009, p.139-140

2009

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IEEE_Xplore

Business process modelling in small to mediumsized enterprises

Industrial Management & Data Systems, 2001, Vol.101 (4), p.144-152

2001

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Effect of Propofol on the Electrocorticogram in Epileptic Patients Undergoing Cortical Resection

Survey of anesthesiology, 1999-12, Vol.43 (6), p.327

1999

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The isolation and preliminary electrophoretic analyses of the mitotic spindle from cultured mammalian cells

Experimental cell research, 1977-01, Vol.107 (1), p.71-77

1977

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Modelling Failure Prone Flexible Manufacturing Systems

IFAC Proceedings Volumes, 1994-12, Vol.27 (16), p.219-224

1994

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MODELLING FAILURE PRONE FLEXIBLE MANUFACTURING SYSTEMS

Safety, Reliability and Applications of Emerging Intelligent Control Technologies, 1995, p.219-224

1995

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Appearance of polyribosomes during germination of spores in cellular slime mold Dictyostelium purpureum

Experimental cell research, 1971-01, Vol.65 (2), p.439-444

1971

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Structural studies on mitotic spindles isolated from cultured human cells

Journal of ultrastructure research, 1979, Vol.66 (1), p.40-52

1979

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Supplier selection for outsourcing from the perspective of protecting crucial product knowledge

Business process modelling in small- to medium-sized enterprises

Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process

Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high- κ dielectrics on Ge without interfacial layers

Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge

Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric

Ge metal-oxide-semiconductor devices with Al 2O 3/Ga 2O 3(Gd 2O 3) as gate dielectric

Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium

InGaAs and Ge MOSFETs with high κ dielectrics

Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2O 3 on Ge

Molecular beam epitaxy-grown Al 2O 3/HfO 2 high-κ dielectrics for germanium

Depletion-mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric

Depletion-mode GaAs-based MOSFET with Ga 2O 3(Gd 2O 3) as a gate dielectric

High performance Ga2O3(Gd2O3)/Ge MOS devices without interfacial layers

Service availability of a radio access telecommunications network

Effect of propofol on the electrocorticogram in epileptic patients undergoing cortical resection

Design and operation of flexible manufacturing cells

Metal-oxide-semiconductor devices with UHV-Ga2O3(Gd2O3) on Ge(100)

Business process modelling in small to mediumsized enterprises

Effect of Propofol on the Electrocorticogram in Epileptic Patients Undergoing Cortical Resection

The isolation and preliminary electrophoretic analyses of the mitotic spindle from cultured mammalian cells

Modelling Failure Prone Flexible Manufacturing Systems

MODELLING FAILURE PRONE FLEXIBLE MANUFACTURING SYSTEMS

Appearance of polyribosomes during germination of spores in cellular slime mold Dictyostelium purpureum

Structural studies on mitotic spindles isolated from cultured human cells

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