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On impact ionization and avalanche in gallium nitride

Applied physics letters, 2020-12, Vol.117 (25)

2020

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Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

Applied physics letters, 2019-08, Vol.115 (7)

2019

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Gallium nitride based power switches for next generation of power conversion

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1066-1074

Chowdhury, Srabanti

2015

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Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3060-3066

2013

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Simultaneous drive-in of Mg and disassociation of Mg-H complex in Ga2O3 by oxygen annealing achieving remarkable current blocking

Applied physics letters, 2024-05, Vol.124 (21)

2024

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A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Applied physics letters, 2021-10, Vol.119 (17)

2021

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A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure

Applied physics letters, 2022-03, Vol.120 (11)

2022

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Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

ACS applied materials & interfaces, 2021-12, Vol.13 (50), p.60553-60560

2021

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Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors

Applied physics letters, 2023-08, Vol.123 (6)

2023

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A Study on the Impact of Dislocation Density on Leakage Current in Vertical GaN-on-GaN p-n Diodes

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4206-4211

2022

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Analysis of the reverse I-V characteristics of diamond-based PIN diodes

Applied physics letters, 2017-07, Vol.111 (4)

2017

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Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices

Advanced functional materials, 2022-11, Vol.32 (47), p.n/a

2022

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Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74014

2013

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Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity

Journal of applied physics, 2017-10, Vol.122 (15)

2017

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Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

Applied physics letters, 2015-05, Vol.106 (18)

2015

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On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications

Frontiers in materials, 2022-03, Vol.9

2022

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The evolving experience of academic women in engineering

Communications engineering, 2024-08, Vol.3 (1), p.113-4

2024

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Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures

Applied physics letters, 2010-11, Vol.97 (22)

2010

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A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN

Crystals (Basel), 2019-10, Vol.9 (10), p.498

2019

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Temperature dependent simulation of diamond depleted Schottky PIN diodes

Journal of applied physics, 2016-06, Vol.119 (22)

2016

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Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch

IEEE electron device letters, 2018-07, Vol.39 (7), p.1030-1033

2018

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Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2457-2462

2020

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A discussion on various experimental methods of impact ionization coefficient measurement in GaN

AIP Advances, 2022-03, Vol.12 (3), p.030703-030703-8

2022

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High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion

Crystals (Basel), 2023-04, Vol.13 (4), p.709

2023

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Compact Model Parameter Extraction via Derivative-Free Optimization

IEEE access, 2024, Vol.12, p.123224-123235

2024

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On impact ionization and avalanche in gallium nitride

Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

Gallium nitride based power switches for next generation of power conversion

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

Simultaneous drive-in of Mg and disassociation of Mg-H complex in Ga2O3 by oxygen annealing achieving remarkable current blocking

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure

Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors

A Study on the Impact of Dislocation Density on Leakage Current in Vertical GaN-on-GaN p-n Diodes

Analysis of the reverse I-V characteristics of diamond-based PIN diodes

Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices

Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications

The evolving experience of academic women in engineering

Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures

A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch

Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation

A discussion on various experimental methods of impact ionization coefficient measurement in GaN

High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion

Compact Model Parameter Extraction via Derivative-Free Optimization

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