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Emission properties of nanolasers during the transition to lasing

Light, science & applications, 2014-08, Vol.3 (8), p.e201-e201

2014

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Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

Nano letters, 2017-02, Vol.17 (2), p.1049-1055

2017

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Linewidth narrowing in self-injection-locked on-chip lasers

Light, science & applications, 2023-06, Vol.12 (1), p.162-162, Article 162

2023

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Physics and applications of quantum dot lasers for silicon photonics

Nanophotonics (Berlin, Germany), 2020-06, Vol.9 (6), p.1271-1286

2020

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Feedback and injection locking instabilities in quantum-dot lasers: a microscopically based bifurcation analysis

New journal of physics, 2013-09, Vol.15 (9), p.93031-25

2013

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Multimode Physics in the Mode Locking of Semiconductor Quantum Dot Lasers

Applied sciences, 2022-04, Vol.12 (7), p.3504-14

2022

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On the physics of semiconductor quantum dots for applications in lasers and quantum optics

Progress in quantum electronics, 2013-05, Vol.37 (3), p.109-184

2013

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Influencing modulation properties of quantum-dot semiconductor lasers by carrier lifetime engineering

Applied physics letters, 2012-09, Vol.101 (13)

2012

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Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

ACS photonics, 2021-09, Vol.8 (9), p.2555-2566

2021

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Design and Analysis of Enhanced Modulation Response in Integrated Coupled Cavities DBR Lasers Using Photon-Photon Resonance

Photonics, 2016-03, Vol.3 (1), p.4-4

2016

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A Review of High-Performance Quantum Dot Lasers on Silicon

IEEE journal of quantum electronics, 2019-04, Vol.55 (2), p.1-11

2019

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Multimode description of self-mode locking in a single-section quantum-dot laser

Optics express, 2020-02, Vol.28 (4), p.5317-5330

2020

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Erratum to: Physics and applications of quantum dot lasers for silicon photonics

Nanophotonics (Berlin, Germany), 2022-05, Vol.11 (8), p.1653-1653

2022

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Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications

IEEE journal of selected topics in quantum electronics, 2019-11, Vol.25 (6), p.1-9

2019

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Turnkey locking of quantum-dot lasers directly grown on Si

Nature photonics, 2024-07, Vol.18 (7), p.669-676

2024

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Effects of modulation p doping in InAs quantum dot lasers on silicon

Applied physics letters, 2018-08, Vol.113 (6)

2018

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Analysis of the Spontaneous Emission Limited Linewidth of an Integrated III–V/SiN Laser

Laser & photonics reviews, 2022-06, Vol.16 (6), p.2100620:1-n/a

2022

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Observation of Rabi Splitting from Surface Plasmon Coupled Conduction State Transitions in Electrically Excited InAs Quantum Dots

Nano letters, 2011-02, Vol.11 (2), p.338-342

2011

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Emission from quantum-dot high-β microcavities: transition from spontaneous emission to lasing and the effects of superradiant emitter coupling

Light, science & applications, 2017-08, Vol.6 (8), p.e17030-e17030

2017

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Single-mode GaN nanowire lasers

Optics express, 2012-07, Vol.20 (16), p.17873-17879

2012

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Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode

Optics express, 2014-01, Vol.22 (2), p.1413-1425

Chow, Weng W

2014

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Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

Applied physics letters, 2016-05, Vol.108 (22)

2016

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Amplitude-phase coupling and chirp in quantum-dot lasers: influence of charge carrier scattering dynamics

Optics express, 2014-03, Vol.22 (5), p.4867-4879

2014

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Model for direct-transition gain in a Ge-on-Si laser

Applied physics letters, 2012-05, Vol.100 (19), p.191113-191113-3

Chow, Weng W.

2012

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Modeling excitation-dependent bandstructure effects on InGaN light-emitting diode efficiency

Optics express, 2011-10, Vol.19 (22), p.21818-21831

Chow, Weng W

2011

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Emission properties of nanolasers during the transition to lasing

Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

Linewidth narrowing in self-injection-locked on-chip lasers

Physics and applications of quantum dot lasers for silicon photonics

Feedback and injection locking instabilities in quantum-dot lasers: a microscopically based bifurcation analysis

Multimode Physics in the Mode Locking of Semiconductor Quantum Dot Lasers

On the physics of semiconductor quantum dots for applications in lasers and quantum optics

Influencing modulation properties of quantum-dot semiconductor lasers by carrier lifetime engineering

Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

Design and Analysis of Enhanced Modulation Response in Integrated Coupled Cavities DBR Lasers Using Photon-Photon Resonance

A Review of High-Performance Quantum Dot Lasers on Silicon

Multimode description of self-mode locking in a single-section quantum-dot laser

Erratum to: Physics and applications of quantum dot lasers for silicon photonics

Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications

Turnkey locking of quantum-dot lasers directly grown on Si

Effects of modulation p doping in InAs quantum dot lasers on silicon

Analysis of the Spontaneous Emission Limited Linewidth of an Integrated III–V/SiN Laser

Observation of Rabi Splitting from Surface Plasmon Coupled Conduction State Transitions in Electrically Excited InAs Quantum Dots

Emission from quantum-dot high-β microcavities: transition from spontaneous emission to lasing and the effects of superradiant emitter coupling

Single-mode GaN nanowire lasers

Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

Amplitude-phase coupling and chirp in quantum-dot lasers: influence of charge carrier scattering dynamics

Model for direct-transition gain in a Ge-on-Si laser

Modeling excitation-dependent bandstructure effects on InGaN light-emitting diode efficiency

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