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Defects in ferroelectric HfO2

Nanoscale, 2021-07, Vol.13 (27), p.11635-11678

2021

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Electron beam-induced current imaging of ferroelectric domains and local polarization reversal in Hf0.5Zr0.5O2

Journal of applied physics, 2023-04, Vol.133 (15)

2023

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Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices

Acta materialia, 2021-02, Vol.204, p.116515, Article 116515

2021

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Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations

ACS applied materials & interfaces, 2018-03, Vol.10 (10), p.8818-8826

2018

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Polarization Switching Kinetics in Thin Ferroelectric HZO Films

Nanomaterials (Basel, Switzerland), 2022-11, Vol.12 (23), p.4126

2022

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Wake-Up in a Hf0.5Zr0.5O2 Film: A Cycle-by-Cycle Emergence of the Remnant Polarization via the Domain Depinning and the Vanishing of the Anomalous Polarization Switching

ACS applied electronic materials, 2019-03, Vol.1 (3), p.275-287

2019

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Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures

ACS applied materials & interfaces, 2020-12, Vol.12 (49), p.55331-55341

2020

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Superflexible and Stretchable Ferroelectric Memory on a Biocompatible Platform

Advanced electronic materials, 2024-05, Vol.10 (5), p.n/a

2024

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Unravelling the nanoscale mechanism of polarization reversal in a Hf0.5Zr0.5O2-based ferroelectric capacitor by vector piezoresponse force microscopy

Nanoscale, 2024-07, Vol.16 (27), p.13079-13088

2024

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Unravelling the nanoscale mechanism of polarization reversal in a HfZrO-based ferroelectric capacitor by vector piezoresponse force microscopy

Nanoscale, 2024-07, Vol.16 (27), p.1379-1388

2024

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Unravelling the nanoscale mechanism of polarization reversal in a Hf 0.5 Zr 0.5 O 2 -based ferroelectric capacitor by vector piezoresponse force microscopy

Nanoscale, 2024-07, Vol.16 (27), p.13079-13088

2024

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Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf0.5Zr0.5O2

Nanomaterials (Basel, Switzerland), 2022-04, Vol.12 (9), p.1483

2022

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Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS2 Films

Nanomaterials (Basel, Switzerland), 2023-10, Vol.13 (19), p.2712

2023

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Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors

ACS omega, 2021-12, Vol.6 (50), p.34429-34437

2021

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Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaO x ‑Based Memory Structures

ACS applied materials & interfaces, 2020-12, Vol.12 (49), p.55331-55341

2020

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Wake-Up Free Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films

Nanomaterials (Basel, Switzerland), 2023-11, Vol.13 (21), p.2825

2023

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Bottom‐Electrode Nanoasperities as a Root of the High‐Performance Resistive‐Switching Effect

Physica status solidi. PSS-RRL. Rapid research letters, 2021-02, Vol.15 (2), p.n/a

2021

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Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf0.5Zr0.5O2 Film

Nanomaterials (Basel, Switzerland), 2023-12, Vol.13 (23), p.3063

2023

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Multifrequency Retention Model of HfO2-Based FRAM

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6307-6312

2023

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Multifrequency Retention Model of HfO 2 -Based FRAM

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6307-6312

2023

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Thickness-Dependent Structural and Electrical Properties of WS 2 Nanosheets Obtained via the ALD-Grown WO 3 Sulfurization Technique as a Channel Material for Field-Effect Transistors

ACS omega, 2021-12, Vol.6 (50), p.34429-34437

2021

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Ferroelectric Second-Order Memristor

ACS applied materials & interfaces, 2019-09, Vol.11 (35), p.32108-32114

2019

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Giant Electromechanical Effect in Piezoelectric Nanomembranes Based on Hf0.5Zr0.5O2

ACS applied materials & interfaces, 2024-01, Vol.16 (1), p.975-984

2024

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Defects in ferroelectric HfO 2

Nanoscale, 2021-07, Vol.13 (27), p.11635-11678

2021

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Defects in ferroelectric HfO

Nanoscale, 2021-07, Vol.13 (27), p.11635-11678

2021

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Defects in ferroelectric HfO2

Electron beam-induced current imaging of ferroelectric domains and local polarization reversal in Hf0.5Zr0.5O2

Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices

Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations

Polarization Switching Kinetics in Thin Ferroelectric HZO Films

Wake-Up in a Hf0.5Zr0.5O2 Film: A Cycle-by-Cycle Emergence of the Remnant Polarization via the Domain Depinning and the Vanishing of the Anomalous Polarization Switching

Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures

Superflexible and Stretchable Ferroelectric Memory on a Biocompatible Platform

Unravelling the nanoscale mechanism of polarization reversal in a Hf0.5Zr0.5O2-based ferroelectric capacitor by vector piezoresponse force microscopy

Unravelling the nanoscale mechanism of polarization reversal in a HfZrO-based ferroelectric capacitor by vector piezoresponse force microscopy

Unravelling the nanoscale mechanism of polarization reversal in a Hf 0.5 Zr 0.5 O 2 -based ferroelectric capacitor by vector piezoresponse force microscopy

Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf0.5Zr0.5O2

Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS2 Films

Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors

Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaO x ‑Based Memory Structures

Wake-Up Free Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films

Bottom‐Electrode Nanoasperities as a Root of the High‐Performance Resistive‐Switching Effect

Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf0.5Zr0.5O2 Film

Multifrequency Retention Model of HfO2-Based FRAM

Multifrequency Retention Model of HfO 2 -Based FRAM

Thickness-Dependent Structural and Electrical Properties of WS 2 Nanosheets Obtained via the ALD-Grown WO 3 Sulfurization Technique as a Channel Material for Field-Effect Transistors

Ferroelectric Second-Order Memristor

Giant Electromechanical Effect in Piezoelectric Nanomembranes Based on Hf0.5Zr0.5O2

Defects in ferroelectric HfO 2

Defects in ferroelectric HfO

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