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Characterization of Ge15Sb85 phase change material grown by pulsed laser deposition

Applied physics. A, Materials science & processing, 2018-02, Vol.124 (2), p.1-6, Article 200

2018

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2$\,\times\,$2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55-$\mu$m Applications

IEEE photonics technology letters, 2009-10, Vol.21 (19), p.1357-1359

2009

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Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

Electronics letters, 2007, Vol.43 (22), p.1234-1236, Article 1234

2007

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A Novel Bondpad report process for III–V semiconductor devices using full HSQ properties

Microelectronic engineering, 2009, Vol.86 (1), p.68-71

2009

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2 \,\times\, 2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55- \mum Applications

IEEE photonics technology letters, 2009-10, Vol.21 (19), p.1357-1359

2009

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2[Formula Omitted]2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55-[Formula Omitted]m Applications

IEEE photonics technology letters, 2009-10, Vol.21 (19), p.1357

2009

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Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

Electronics letters, 2007-10, Vol.43 (22), p.1-1

2007

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Comparing Performance and Experience in VR vs. Real-World Through a Puzzle Game

Videogame Sciences and Arts, p.72-85

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Electron beam assisted field evaporation of insulating nanowires/tubes

Applied physics letters, 2015-05, Vol.106 (19)

2015

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Hypothyroïdie périphérique : une cause curable d’une myocardiopathie dilatée

Annales d'endocrinologie, 2018-09, Vol.79 (4), p.366-366

2018

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Représentation et identification des hypersurfaces

Choueib, Hassan

2013

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Zeolitisation of fly ash for sorption of dyes in aqueous solutions

Studies in Surface Science and Catalysis, 2005, Vol.158, p.161-168

2005

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Characterization of Ge15Sb85 phase change material grown by pulsed laser deposition

2$\,\times\,$2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55-$\mu$m Applications

Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

A Novel Bondpad report process for III–V semiconductor devices using full HSQ properties

2 \,\times\, 2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55- \mum Applications

2[Formula Omitted]2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55-[Formula Omitted]m Applications

Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

Comparing Performance and Experience in VR vs. Real-World Through a Puzzle Game

Electron beam assisted field evaporation of insulating nanowires/tubes

Hypothyroïdie périphérique : une cause curable d’une myocardiopathie dilatée

Représentation et identification des hypersurfaces

Zeolitisation of fly ash for sorption of dyes in aqueous solutions

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