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Increasing Controllable Oxygen Ions to Improve Device Performance Using Supercritical Fluid Technique in ZnO-Based Resistive Random Access Memory

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.127-132

2022

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Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment

IEEE electron device letters, 2023-02, Vol.44 (2), p.213-216

2023

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Reducing Interface Traps with High Density Hydrogen Treatment to Increase Passivated Emitter Rear Contact Cell Efficiency

Nanoscale research letters, 2019-12, Vol.14 (1), p.375-7, Article 375

2019

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Application of a hybrid lattice-Boltzmann Lagrangian method to predict fibrous particle penetration through mesh screens

Physics of fluids (1994), 2024-09, Vol.36 (9)

2024

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Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device

Advanced electronic materials, 2020-06, Vol.6 (6), p.n/a

2020

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Utilizing sulfuration of supercritical fluid treatment to improve sensitivity and humidity resistance of chip-type gas sensors

Sensors and actuators. B, Chemical, 2024-04, Vol.404, p.135273, Article 135273

2024

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Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory

Journal of alloys and compounds, 2020-06, Vol.826, p.154126, Article 154126

2020

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Utilizing high pressure hydrogen annealing to realize forming free CBRAM

Materials science & engineering. B, Solid-state materials for advanced technology, 2023-10, Vol.296, p.116619, Article 116619

2023

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Impact of oxygen flow rate on performance of indium-tin-oxide-based RRAMs

Journal of physics. D, Applied physics, 2021-07, Vol.54 (29), p.295103

2021

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Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6705

2022

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Advanced supercritical fluid technique to reduce amorphous silicon defects in heterojunction solar cells

Semiconductor science and technology, 2022-08, Vol.37 (8), p.85011

2022

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Performance improvement of Zn0.5Mg0.5O UV sensor by supercritical fluid technology

Materials science in semiconductor processing, 2023-05, Vol.158, p.107343, Article 107343

2023

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Use of a supercritical fluid treatment to improve switching region in resistive random access memory

Applied physics express, 2022-06, Vol.15 (6), p.64006

2022

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Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process

2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA), 2022, p.1-2

2022

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An Approach to Extract the Trap States via the Dynamic Ron Method With Substrate Voltage Applied During the Recovery Time

IEEE transactions on electron devices, 2024-11, Vol.71 (11), p.6616-6619

2024

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An Approach to Extract the Trap States via the Dynamic R on Method With Substrate Voltage Applied During the Recovery Time

IEEE transactions on electron devices, 2024-11, Vol.71 (11), p.6616-6619

2024

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Forming-Free HfO 2 -Based Resistive Random Access Memory by X-Ray Irradiation

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6705-6709

2022

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Improved diffusion and storage of lithium ions via recrystallization induced conducting pathways in a Li:Ta2O5-based electrolyte for all-solid-state electrochromic devices with enhanced performance

Nanotechnology, 2022-04, Vol.33 (27)

2022

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Improved diffusion and storage of lithium ions via recrystallization induced conducting pathways in a Li:Ta 2 O 5 -based electrolyte for all-solid-state electrochromic devices with enhanced performance

Nanotechnology, 2022-07, Vol.33 (27), p.275711

2022

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Forming-Free HfO } -Based Resistive Random Access Memory by X-Ray Irradiation

IEEE transactions on electron devices, 2022, p.1-5

2022

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Introducing a supercritical fluid technique to reduce passivation layer interface defects in passivated emitter rear contact cells

Materials science in semiconductor processing, 2022-01, Vol.137, p.106217, Article 106217

2022

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Clarifying the switching layer transformation through analysis of an abnormal I–V curves with increasing set compliance current in oxide-based resistive random access memory

Applied physics express, 2021-09, Vol.14 (9), p.94007

2021

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Realizing forming-free characteristic by doping Ag into HfO 2 -based RRAM

Applied physics express, 2021-04, Vol.14 (4), p.41008

2021

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A novel SCF H2O process increasing Hf02 MOSCAP reliability

2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2024, p.1-5

2024

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Enhancing Performance and Reliability of MISGaN HEMT by Advanced Supercritical Fluid Nitridation Technique

2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2024, p.1-5

2024

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Increasing Controllable Oxygen Ions to Improve Device Performance Using Supercritical Fluid Technique in ZnO-Based Resistive Random Access Memory

Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment

Reducing Interface Traps with High Density Hydrogen Treatment to Increase Passivated Emitter Rear Contact Cell Efficiency

Application of a hybrid lattice-Boltzmann Lagrangian method to predict fibrous particle penetration through mesh screens

Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device

Utilizing sulfuration of supercritical fluid treatment to improve sensitivity and humidity resistance of chip-type gas sensors

Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory

Utilizing high pressure hydrogen annealing to realize forming free CBRAM

Impact of oxygen flow rate on performance of indium-tin-oxide-based RRAMs

Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation

Advanced supercritical fluid technique to reduce amorphous silicon defects in heterojunction solar cells

Performance improvement of Zn0.5Mg0.5O UV sensor by supercritical fluid technology

Use of a supercritical fluid treatment to improve switching region in resistive random access memory

Investigation of Electrical Characteristics in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Fabricated at Low-Temperature Process

An Approach to Extract the Trap States via the Dynamic Ron Method With Substrate Voltage Applied During the Recovery Time

An Approach to Extract the Trap States via the Dynamic R on Method With Substrate Voltage Applied During the Recovery Time

Forming-Free HfO 2 -Based Resistive Random Access Memory by X-Ray Irradiation

Improved diffusion and storage of lithium ions via recrystallization induced conducting pathways in a Li:Ta2O5-based electrolyte for all-solid-state electrochromic devices with enhanced performance

Improved diffusion and storage of lithium ions via recrystallization induced conducting pathways in a Li:Ta 2 O 5 -based electrolyte for all-solid-state electrochromic devices with enhanced performance

Forming-Free HfO } -Based Resistive Random Access Memory by X-Ray Irradiation

Introducing a supercritical fluid technique to reduce passivation layer interface defects in passivated emitter rear contact cells

Clarifying the switching layer transformation through analysis of an abnormal I–V curves with increasing set compliance current in oxide-based resistive random access memory

Realizing forming-free characteristic by doping Ag into HfO 2 -based RRAM

A novel SCF H2O process increasing Hf02 MOSCAP reliability

Enhancing Performance and Reliability of MISGaN HEMT by Advanced Supercritical Fluid Nitridation Technique

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