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Implementing P-Channel Junctionless Thin-Film Transistor on Poly-Ge0.95Sn0.05 Film Formed by Amorphous GeSn Deposition and Annealing

IEEE electron device letters, 2018-08, Vol.39 (8), p.1187-1190

2018

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Enabling Low Contact Resistivity on n-Ge by Implantation After Ti Germanide

IEEE electron device letters, 2018-01, Vol.39 (1), p.91-94

2018

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Formation of Ohmic Contact With Low Contact Resistance on n-GeSn by Fermi Level Depinning Using Plasma Treatment

IEEE electron device letters, 2016-07, Vol.37 (7), p.827-830

2016

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Improved Current Drivability for Sub-20-nm N-FinFETs by Ge Pre-Amorphization in Contact With Reverse Retrograde Profile

IEEE electron device letters, 2017-03, Vol.38 (3), p.299-302

2017

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Fermi Level Depinning on n-Epitaxial GeSn by Yb Stanogermanide Formation With Low-Contact Resistivity

IEEE electron device letters, 2016-09, Vol.37 (9), p.1207-1210

2016

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Improved leakage current and device uniformity for sub-20 nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact

Microelectronic engineering, 2017-06, Vol.178, p.137-140

2017

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Junctionless Poly-GeSn Ferroelectric Thin-Film Transistors with Improved Reliability by Interface Engineering for Neuromorphic Computing

ACS applied materials & interfaces, 2020-01, Vol.12 (1), p.1014-1023

2020

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Poly-GeSn junctionless P-TFTs featuring a record high I ON / I OFF ratio and hole mobility by defect engineering

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-05, Vol.7 (17), p.5201-5208

2019

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Nearly Epitaxial Low-Resistive Co Germanide Formed by Atomic Layer Deposited Cobalt and Laser Thermal Annealing

IEEE electron device letters, 2020-02, Vol.41 (2), p.272-275

2020

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Co Silicide With Low Contact Resistivity Formed by Atomic Layer Deposited Cobalt and Subsequent Annealing

IEEE electron device letters, 2020-01, Vol.41 (1), p.139-142

2020

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Improved Contact Resistivity and Transconductance for Sub-10 nm FinFET Technology by Laser-Induced Contact Silicide

IEEE transactions on nanotechnology, 2021, Vol.20, p.761-764

2021

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Impact of GeSn Crystallinity on Reliability of Ferroelectric HfZrOx for Devices with Metal–Ferroelectric–Semiconductor Structure

Physica status solidi. PSS-RRL. Rapid research letters, 2020-07, Vol.14 (7), p.n/a

2020

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Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance

ECS journal of solid state science and technology, 2021-06, Vol.10 (6), p.65002

2021

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Investigation of mechanical bending instability in flexible low-temperature-processed electrochromic display devices

Thin solid films, 2015-06, Vol.584, p.94-97

2015

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Performance improvement of electrochromic display devices employing micro-size precipitates of tungsten oxide

Applied physics. A, Materials science & processing, 2014-09, Vol.116 (4), p.1553-1559

2014

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Investigation of Capping Layer on Characteristics of Poly-GeSn Junctionless p-Channel Thin Film Transistors

ECS journal of solid state science and technology, 2019, Vol.8 (11), p.P647-P651

2019

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Poly-GeSn junctionless P-TFTs featuring a record high ION/IOFF ratio and hole mobility by defect engineering

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-01, Vol.7 (17), p.5201-5208

2019

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Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn Film

ACS applied materials & interfaces, 2021-06, Vol.13 (22), p.26630-26638

2021

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Implementing P-Channel Junctionless Thin-Film Transistor on Poly-Ge 0.95 Sn 0.05 Film Formed by Amorphous GeSn Deposition and Annealing

IEEE electron device letters, 2018-08, Vol.39 (8), p.1187-1190

2018

Volltextzugriff (PDF)

Impact of GeSn Crystallinity on Reliability of Ferroelectric HfZrO x for Devices with Metal–Ferroelectric–Semiconductor Structure

Physica status solidi. PSS-RRL. Rapid research letters, 2020-07, Vol.14 (7)

2020

Volltextzugriff (PDF)

Improved leakage current and device uniformity for sub-20nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact

Microelectronic engineering, 2017-06, Vol.178, p.137-140

2017

Volltextzugriff (PDF)

Formation of solid phase epitaxial GeSn and its application to high-performance N-MOSFETs and low-resistivity contact

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016, p.507-510

2016

Volltextzugriff (PDF)

Poly-GeSn junctionless P-TFTs featuring a record high / ratio and hole mobility by defect engineering

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-04, Vol.7 (17), p.521-528

2019

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Design and nonlinear servo control of MEMS mirrors and their performance in a large port-count optical switch

Journal of microelectromechanical systems, 2005-04, Vol.14 (2), p.261-273

2005

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Implementing P-Channel Junctionless Thin-Film Transistor on Poly-Ge0.95Sn0.05 Film Formed by Amorphous GeSn Deposition and Annealing

Enabling Low Contact Resistivity on n-Ge by Implantation After Ti Germanide

Formation of Ohmic Contact With Low Contact Resistance on n-GeSn by Fermi Level Depinning Using Plasma Treatment

Improved Current Drivability for Sub-20-nm N-FinFETs by Ge Pre-Amorphization in Contact With Reverse Retrograde Profile

Fermi Level Depinning on n-Epitaxial GeSn by Yb Stanogermanide Formation With Low-Contact Resistivity

Improved leakage current and device uniformity for sub-20 nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact

Junctionless Poly-GeSn Ferroelectric Thin-Film Transistors with Improved Reliability by Interface Engineering for Neuromorphic Computing

Poly-GeSn junctionless P-TFTs featuring a record high I ON / I OFF ratio and hole mobility by defect engineering

Nearly Epitaxial Low-Resistive Co Germanide Formed by Atomic Layer Deposited Cobalt and Laser Thermal Annealing

Co Silicide With Low Contact Resistivity Formed by Atomic Layer Deposited Cobalt and Subsequent Annealing

Improved Contact Resistivity and Transconductance for Sub-10 nm FinFET Technology by Laser-Induced Contact Silicide

Impact of GeSn Crystallinity on Reliability of Ferroelectric HfZrOx for Devices with Metal–Ferroelectric–Semiconductor Structure

Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance

Investigation of mechanical bending instability in flexible low-temperature-processed electrochromic display devices

Performance improvement of electrochromic display devices employing micro-size precipitates of tungsten oxide

Investigation of Capping Layer on Characteristics of Poly-GeSn Junctionless p-Channel Thin Film Transistors

Poly-GeSn junctionless P-TFTs featuring a record high ION/IOFF ratio and hole mobility by defect engineering

Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn Film

Implementing P-Channel Junctionless Thin-Film Transistor on Poly-Ge 0.95 Sn 0.05 Film Formed by Amorphous GeSn Deposition and Annealing

Impact of GeSn Crystallinity on Reliability of Ferroelectric HfZrO x for Devices with Metal–Ferroelectric–Semiconductor Structure

Improved leakage current and device uniformity for sub-20nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact

Formation of solid phase epitaxial GeSn and its application to high-performance N-MOSFETs and low-resistivity contact

Poly-GeSn junctionless P-TFTs featuring a record high / ratio and hole mobility by defect engineering

Design and nonlinear servo control of MEMS mirrors and their performance in a large port-count optical switch

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