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Lattice‐Distortion‐Enhanced Yield Strength in a Refractory High‐Entropy Alloy

Advanced materials (Weinheim), 2020-12, Vol.32 (49), p.e2004029-n/a

2020

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Strength can be controlled by edge dislocations in refractory high-entropy alloys

Nature communications, 2021-09, Vol.12 (1), p.5474-5474, Article 5474

2021

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Achieving superb strength in single-phase FCC alloys via maximizing volume misfit

Materials today (Kidlington, England), 2023-03, Vol.63, p.108-119

2023

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Wet‐Etching‐Boosted Charge Storage in 1D Nitride‐Based Systems for Imitating Biological Synaptic Behaviors

Advanced functional materials, 2023-12, Vol.33 (52), p.n/a

2023

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Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

Nature communications, 2020-06, Vol.11 (1), p.2972-2972, Article 2972

2020

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Second Harmonic Generation from Artificially Stacked Transition Metal Dichalcogenide Twisted Bilayers

ACS nano, 2014-03, Vol.8 (3), p.2951-2958

2014

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Temperature dependence of elastic and plastic deformation behavior of a refractory high-entropy alloy

Science advances, 2020-09, Vol.6 (37)

2020

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Evidence of indirect gap in monolayer WSe2

Nature communications, 2017-10, Vol.8 (1), p.1-7, Article 929

2017

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Structural and functional insights into ABHD5, a ligand-regulated lipase co-activator

Scientific reports, 2022-02, Vol.12 (1), p.2565-17, Article 2565

2022

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Negative circular polarization emissions from WSe2/MoSe2 commensurate heterobilayers

Nature communications, 2018-04, Vol.9 (1), p.1-7, Article 1356

2018

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Workplace Social Support as a Mediating Factor in the Association between Occupational Stressors and Job Burnout: A Study in the Taiwanese Nursing Context

Journal of nursing management, 2023-08, Vol.2023, p.1-11

2023

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Measurement of Lattice Distortion in NbTaTiV and NbTaTiVZr Using Electron Microscopy

Metallurgical and materials transactions. A, Physical metallurgy and materials science, 2021-06, Vol.52 (6), p.2094-2099

2021

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Defect Engineering in Ambipolar Layered Materials for Mode‐Regulable Nociceptor

Advanced functional materials, 2021-01, Vol.31 (5), p.n/a

2021

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Effects of Different Extraction Methods on Vanilla Aroma

Molecules (Basel, Switzerland), 2022-07, Vol.27 (14), p.4593

2022

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New Insights on Volatile Components of Vanilla planifolia Cultivated in Taiwan

Molecules (Basel, Switzerland), 2021-06, Vol.26 (12), p.3608

2021

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Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

Nanoscale research letters, 2021-03, Vol.16 (1), p.45-45, Article 45

2021

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Controlling the Growth of Si/Ge Nanowires and Heterojunctions Using Silver–Gold Alloy Catalysts

ACS nano, 2012-07, Vol.6 (7), p.6407-6415

2012

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A Fast Route Towards Freestanding Single-Crystalline Oxide Thin Films by Using YBa2Cu3O7-x as a Sacrificial Layer

Nanoscale research letters, 2020-08, Vol.15 (1), p.172-172, Article 172

2020

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Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy

Chemical communications (Cambridge, England), 2016-04, Vol.52 (33), p.5686-5689

2016

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Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon

Scientific reports, 2017-12, Vol.7 (1), p.17942-10, Article 17942

2017

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Determination of Pyruvate Metabolic Fates Modulates Head and Neck Tumorigenesis

Neoplasia (New York, N.Y.), 2019-07, Vol.21 (7), p.641-652

2019

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Dependence of the structure and orientation of VSS grown Si nanowires on an epitaxy process

CrystEngComm, 2019, Vol.21 (29), p.4298-434

2019

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Ultrahigh field-induced strain in lead-free ceramics

Nano energy, 2020-10, Vol.76, p.105037, Article 105037

2020

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Transformation and Control of Crystal Structures on Electronic Thin Films

Crystal growth & design, 2024-02, Vol.24 (3), p.992-1002

2024

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Direct Growth of Wafer‐Scale Self‐Separated GaN on Reusable 2D Material Substrates

Advanced science, 2024-09, p.e2406126

2024

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Lattice‐Distortion‐Enhanced Yield Strength in a Refractory High‐Entropy Alloy

Strength can be controlled by edge dislocations in refractory high-entropy alloys

Achieving superb strength in single-phase FCC alloys via maximizing volume misfit

Wet‐Etching‐Boosted Charge Storage in 1D Nitride‐Based Systems for Imitating Biological Synaptic Behaviors

Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

Second Harmonic Generation from Artificially Stacked Transition Metal Dichalcogenide Twisted Bilayers

Temperature dependence of elastic and plastic deformation behavior of a refractory high-entropy alloy

Evidence of indirect gap in monolayer WSe2

Structural and functional insights into ABHD5, a ligand-regulated lipase co-activator

Negative circular polarization emissions from WSe2/MoSe2 commensurate heterobilayers

Workplace Social Support as a Mediating Factor in the Association between Occupational Stressors and Job Burnout: A Study in the Taiwanese Nursing Context

Measurement of Lattice Distortion in NbTaTiV and NbTaTiVZr Using Electron Microscopy

Defect Engineering in Ambipolar Layered Materials for Mode‐Regulable Nociceptor

Effects of Different Extraction Methods on Vanilla Aroma

New Insights on Volatile Components of Vanilla planifolia Cultivated in Taiwan

Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

Controlling the Growth of Si/Ge Nanowires and Heterojunctions Using Silver–Gold Alloy Catalysts

A Fast Route Towards Freestanding Single-Crystalline Oxide Thin Films by Using YBa2Cu3O7-x as a Sacrificial Layer

Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy

Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon

Determination of Pyruvate Metabolic Fates Modulates Head and Neck Tumorigenesis

Dependence of the structure and orientation of VSS grown Si nanowires on an epitaxy process

Ultrahigh field-induced strain in lead-free ceramics

Transformation and Control of Crystal Structures on Electronic Thin Films

Direct Growth of Wafer‐Scale Self‐Separated GaN on Reusable 2D Material Substrates

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