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Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2016, 16(2), 68, pp.215-220

2016

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A new junction termination method employing shallow trenches filled with oxide

IEEE electron device letters, 2004-01, Vol.25 (1), p.16-18

2004

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IEEE_Xplore

A new protection circuit for high-voltage current saturation of LEST

IEEE electron device letters, 2005-03, Vol.26 (3), p.191-193

2005

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IEEE_Xplore

Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2493

2007

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Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch

Japanese Journal of Applied Physics, 2004-04, Vol.43 (4S), p.1752

2004

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Analysis of dual-gate LIGBT with gradual hole injection

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.2154-2160

2001

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IEEE_Xplore

A new lateral anode switched thyristor (LAST) with current saturation and low turn-off time

IEEE electron device letters, 2002-07, Vol.23 (7), p.413-415

2002

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IEEE_Xplore

The Novel Junction Termination Method Employing Shallow Trench

Physica scripta, 2004-01, Vol.2004, p.120-122

2004

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In-situ vacuum-sealed lateral FEAs with low turn-on voltage and high transconductance

IEEE transactions on electron devices, 2001-01, Vol.48 (1), p.161-165

2001

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IEEE_Xplore

A New Conductivity Modulated LDMOSFET Employing Buried P Region and P + Drain

Japanese Journal of Applied Physics, 2004-10, Vol.43 (10), p.6917-6919

2004

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A New Voltage between Collector and Emitter (V CE ) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor

Japanese Journal of Applied Physics, 2004-04, Vol.43 (4S), p.1677

2004

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An analytical model for minimum drift region length of SOI RESURF diodes

IEEE electron device letters, 1996-01, Vol.17 (1), p.22-24

1996

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IEEE_Xplore

CB-BRT: a new base resistance-controlled thyristor employing a self-aligned corrugated p-base

IEEE electron device letters, 1998-12, Vol.19 (12), p.493-495

1998

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IEEE_Xplore

Experimental study on short-circuit characteristics of the new protection circuit of insulated gate bipolar transistor

Physica scripta, 2006-09, Vol.2006, p.50-52

2006

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Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3121

2006

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A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3317

2006

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Effect of aspect ratio on forward voltage drop in trench insulated gate bipolar transistor

Solid-state electronics, 2005-05, Vol.49 (5), p.834-837

2005

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A New Lateral Dual-Gate Thyristor with Current Saturation

Japanese Journal of Applied Physics, 2000-04, Vol.39 (4S), p.1979

2000

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A trench-gate silicon-on-insulator lateral insulated gate bipolar transistor with the p+ cathode well

Japanese Journal of Applied Physics, 1995-02, Vol.34 (2B), p.854-859

1995

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Improvement of the Short Circuit Immunity for the Trench IGBT Employing the Curved P-body Junction and the Wide Cell Pitch

Physica scripta, 2004-01, Vol.2004, p.73-76

2004

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A New Protection Circuit of Emitter Switched Thyristor (EST) for Short-Circuit Withstanding Capability

Physica scripta, 2004-01, Vol.2004, p.117-119

2004

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Optimization of Design Parameters on Maximum Controllable Current of the Trench Gate Corrugated-base Base Resistance Controlled Thyristor

Physica scripta, 2004-01, Vol.2004, p.142-144

2004

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Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain

Japanese Journal of Applied Physics, 1998-04, Vol.37 (4R), p.1787

1998

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A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip

Japanese Journal of Applied Physics, 1998-04, Vol.37 (4R), p.2021

1998

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Effects of drift region doping on current characteristics in SOI BMFETs

Physica scripta, 1997-01, Vol.1997, p.181-184

1997

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Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

A new junction termination method employing shallow trenches filled with oxide

A new protection circuit for high-voltage current saturation of LEST

Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition

Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch

Analysis of dual-gate LIGBT with gradual hole injection

A new lateral anode switched thyristor (LAST) with current saturation and low turn-off time

The Novel Junction Termination Method Employing Shallow Trench

In-situ vacuum-sealed lateral FEAs with low turn-on voltage and high transconductance

A New Conductivity Modulated LDMOSFET Employing Buried P Region and P + Drain

A New Voltage between Collector and Emitter (V CE ) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor

An analytical model for minimum drift region length of SOI RESURF diodes

CB-BRT: a new base resistance-controlled thyristor employing a self-aligned corrugated p-base

Experimental study on short-circuit characteristics of the new protection circuit of insulated gate bipolar transistor

Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact

A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor

Effect of aspect ratio on forward voltage drop in trench insulated gate bipolar transistor

A New Lateral Dual-Gate Thyristor with Current Saturation

A trench-gate silicon-on-insulator lateral insulated gate bipolar transistor with the p+ cathode well

Improvement of the Short Circuit Immunity for the Trench IGBT Employing the Curved P-body Junction and the Wide Cell Pitch

A New Protection Circuit of Emitter Switched Thyristor (EST) for Short-Circuit Withstanding Capability

Optimization of Design Parameters on Maximum Controllable Current of the Trench Gate Corrugated-base Base Resistance Controlled Thyristor

Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain

A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip

Effects of drift region doping on current characteristics in SOI BMFETs

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