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A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2619-2627

2014

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Effects of High-Pressure Annealing on Random Telegraph Signal Noise Characteristic of Source Follower Block in CMOS Image Sensor

IEEE electron device letters, 2013-02, Vol.34 (2), p.190-192

2013

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Decrease of Dark Current by Reducing Transfer Transistor Induced Partition Noise With Localized Channel Implantation

IEEE electron device letters, 2010-11, Vol.31 (11), p.1278-1280

2010

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Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors

Solid-state electronics, 2016-05, Vol.119, p.29-32

2016

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A Study of Dielectric Relaxation and Capacitance Matching of // MIM Capacitors

IEEE electron device letters, 2013-10, Vol.34 (10), p.1223-1225

2013

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Decoupling of RTS noise in high density CMOS image sensor using new test structures

2011 IEEE ICMTS International Conference on Microelectronic Test Structures, 2011, p.87-89

2011

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Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors with Nitrided Gate Oxide

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10), p.10PB03-10PB03-4

2011

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Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2

Jpn J Appl Phys, 2011-10, Vol.50 (10), p.10PB06-10PB06-4

2011

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Erratum: "Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2"

Jpn J Appl Phys, 2011-12, Vol.50 (12), p.129202-129202-1

2011

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Plasma-Damage-Induced Leakage Prevention Using Ozone Followed by SPM Solution Cleaning for Ion-Implanted Photoresist Strip

Journal of the Electrochemical Society, 2006, Vol.153 (12), p.D213

2006

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Characterization of Al2O3–HfO2–Al2O3 sandwiched MIM capacitor under DC and AC stresses

Solid-state electronics, 2013-01, Vol.79, p.218-222

2013

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A Study of Dielectric Relaxation and Capacitance Matching of Al2O3/HfO2/Al2O3 MIM Capacitors

IEEE electron device letters, 2013-10, Vol.34 (10), p.1223-1225

2013

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Characterization of Al2O3aHfO2aAl2O3 sandwiched MIM capacitor under DC and AC stresses

Solid-state electronics, 2013-01, Vol.79, p.218-222

2013

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RF Characteristics of SiO sub(2)/HfO sub(2)/SiO sub(2) MIM Capacitor

Advanced Materials Research, 2013-01, Vol.658, p.112-115

2013

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RF Characteristics of SiO2/HfO2/SiO2 MIM Capacitor

Advanced materials research, 2013, Vol.658, p.112-115

2013

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Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Nitrided Gate Oxide

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10S), p.10

2011

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Erratum: “Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al 2 O 3 /HfO 2 /Al 2 O 3 versus SiO 2 /HfO 2 /SiO 2 ”

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12R), p.129202

2011

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Erratum: “Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al 2 O 3 /HfO 2 /Al 2 O 3 versus SiO 2 /HfO 2 /SiO 2 ”

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12R), p.129202

2011

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Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al 2 O 3 /HfO 2 /Al 2 O 3 versus SiO 2 /HfO 2 /SiO 2

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10S), p.10

2011

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Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al 2 O 3 /HfO 2 /Al 2 O 3 versus SiO 2 /HfO 2 /SiO 2

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10S), p.10

2011

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Deformation behavior of duplex austenite and ε-martensite high-Mn steel

Science and technology of advanced materials, 2013-02, Vol.14 (1), p.014204-014204

2013

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Characterization of Al2O3-HfO2-Al2O3 sandwiched MIM capacitor under DC and AC stresses

2011 International Semiconductor Device Research Symposium (ISDRS), 2011, p.1-2

2011

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Regulation of myometrial contraction by ATP-sensitive potassium (KATP) channel via activation of SUR2B and Kir 6.2 in mouse

Journal of Veterinary Medical Science, 2016, Vol.78(7), pp.1153-1159

2016

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Myometrial relaxation of mice via expression of two pore domain acid sensitive K(+) (TASK-2) channels

The Korean Journal of Physiology & Pharmacology, 2016, 20(5), , pp.547-556

2016

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Awareness, intentions and attitudes towards planned oocyte cryopreservation among female medical staff

Reproductive biomedicine online, 2022-06, Vol.44 (6), p.1169-1176

2022

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A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

Effects of High-Pressure Annealing on Random Telegraph Signal Noise Characteristic of Source Follower Block in CMOS Image Sensor

Decrease of Dark Current by Reducing Transfer Transistor Induced Partition Noise With Localized Channel Implantation

Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors

A Study of Dielectric Relaxation and Capacitance Matching of // MIM Capacitors

Decoupling of RTS noise in high density CMOS image sensor using new test structures

Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors with Nitrided Gate Oxide

Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2

Erratum: "Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2"

Plasma-Damage-Induced Leakage Prevention Using Ozone Followed by SPM Solution Cleaning for Ion-Implanted Photoresist Strip

Characterization of Al2O3–HfO2–Al2O3 sandwiched MIM capacitor under DC and AC stresses

A Study of Dielectric Relaxation and Capacitance Matching of Al2O3/HfO2/Al2O3 MIM Capacitors

Characterization of Al2O3aHfO2aAl2O3 sandwiched MIM capacitor under DC and AC stresses

RF Characteristics of SiO sub(2)/HfO sub(2)/SiO sub(2) MIM Capacitor

RF Characteristics of SiO2/HfO2/SiO2 MIM Capacitor

Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Nitrided Gate Oxide

Erratum: “Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al 2 O 3 /HfO 2 /Al 2 O 3 versus SiO 2 /HfO 2 /SiO 2 ”

Erratum: “Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al 2 O 3 /HfO 2 /Al 2 O 3 versus SiO 2 /HfO 2 /SiO 2 ”

Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al 2 O 3 /HfO 2 /Al 2 O 3 versus SiO 2 /HfO 2 /SiO 2

Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al 2 O 3 /HfO 2 /Al 2 O 3 versus SiO 2 /HfO 2 /SiO 2

Deformation behavior of duplex austenite and ε-martensite high-Mn steel

Characterization of Al2O3-HfO2-Al2O3 sandwiched MIM capacitor under DC and AC stresses

Regulation of myometrial contraction by ATP-sensitive potassium (KATP) channel via activation of SUR2B and Kir 6.2 in mouse

Myometrial relaxation of mice via expression of two pore domain acid sensitive K(+) (TASK-2) channels

Awareness, intentions and attitudes towards planned oocyte cryopreservation among female medical staff

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