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Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

Advanced materials (Weinheim), 2014-06, Vol.26 (23), p.3885-3892

2014

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Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

Applied physics letters, 2007-07, Vol.91 (1)

2007

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Identification of a determining parameter for resistive switching of TiO2 thin films

Applied physics letters, 2005-06, Vol.86 (26)

2005

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Conformal Formation of (GeTe2)(1–x)(Sb2Te3) x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

Chemistry of materials, 2012-06, Vol.24 (11), p.2099-2110

2012

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Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory

IEEE electron device letters, 2012-08, Vol.33 (8), p.1189-1191

2012

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Study on the resistive switching time of TiO2 thin films

Applied physics letters, 2006-07, Vol.89 (1)

2006

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Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition

Chemistry of materials, 2009-06, Vol.21 (12), p.2386-2396

2009

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Candidate Molecule for Premature Ejaculation, DA-8031: In Vivo and In Vitro Characterization of DA-8031

Urology (Ridgewood, N.J.), 2011-04, Vol.77 (4), p.1006.e17-1006.e21

2011

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Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge2Sb2Te5 Films on TiN/W Contact Plug

Chemistry of materials, 2007-09, Vol.19 (18), p.4387-4389

2007

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Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation

Applied physics letters, 2010-09, Vol.97 (13)

2010

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Growth and Phase Separation Behavior in Ge-Doped Sb−Te Thin Films Deposited by Combined Plasma-Enhanced Chemical Vapor and Atomic Layer Depositions

Journal of physical chemistry. C, 2010-10, Vol.114 (41), p.17899-17904

2010

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Human monoclonal antibody against Hepatitis B virus surface antigen (HBsAg)

Antiviral research, 2007-08, Vol.75 (2), p.113-120

2007

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Metal acetylacetonate as a radical initiator and catalyst for polyurethane in dual-curing reaction at low temperature

Progress in organic coatings, 2021-02, Vol.151, p.105926, Article 105926

2021

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Phase change memory cell using Ge 2 Sb 2 Te 5 and softly broken-down TiO 2 films for multilevel operation

Applied physics letters, 2010-09, Vol.97 (13), p.132107-132107-3

2010

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One-dimensional porphyrin H-aggregates induced by solvent polarity

Tetrahedron letters, 2008-12, Vol.49 (49), p.7050-7053

Choi, Myung-Seok

2008

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Influence of Substrates on the Nucleation and Growth Behaviors of Ge 2 Sb 2 Te 5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition

Chemistry of materials, 2009-06, Vol.21 (12), p.2386-2396

2009

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Anode-interface localized filamentary mechanism in resistive switchingof Ti O 2 thin films

Applied physics letters, 2007-07, Vol.91 (1), p.012907-012907-3

2007

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Deposition of Piezoelectric ZnO Films by RF Magnetron Sputtering and its Application to SAW Devices

MRS proceedings, 2007, Vol.1035, Article 1035-L05-16

2007

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( In , Sn ) 2 O 3 ∕ Ti O 2 ∕ Pt Schottky-type diode switch for the Ti O 2 resistive switching memory array

Applied physics letters, 2008-04, Vol.92 (16), p.162904-162904-3

2008

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( In , Sn ) 2 O 3 ∕ Ti O 2 ∕ Pt Schottky-type diode switch for the TiO2 resistive switching memory array

Applied physics letters, 2008-04, Vol.92 (16)

2008

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Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge 2 Sb 2 Te 5 Films on TiN/W Contact Plug

Chemistry of materials, 2007-09, Vol.19 (18), p.4387-4389

2007

Volltextzugriff (PDF)

Identification of a determining parameter for resistive switching of Ti O 2 thin films

Applied physics letters, 2005-06, Vol.86 (26), p.262907-262907-3

2005

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Highly reliable ReRAM technology with encapsulation process for 20nm and beyond

2013 5th IEEE International Memory Workshop, 2013, p.42-43

2013

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Study on the resistive switching time of Ti O 2 thin films

Applied physics letters, 2006-07, Vol.89 (1), p.012906-012906-3

2006

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Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb2Te3) Thin Films for a Phase Change Random Access Memory

Journal of the Korean Physical Society, 2006, 49(3), , pp.1173-1179

2006

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Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

Identification of a determining parameter for resistive switching of TiO2 thin films

Conformal Formation of (GeTe2)(1–x)(Sb2Te3) x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory

Study on the resistive switching time of TiO2 thin films

Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition

Candidate Molecule for Premature Ejaculation, DA-8031: In Vivo and In Vitro Characterization of DA-8031

Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge2Sb2Te5 Films on TiN/W Contact Plug

Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation

Growth and Phase Separation Behavior in Ge-Doped Sb−Te Thin Films Deposited by Combined Plasma-Enhanced Chemical Vapor and Atomic Layer Depositions

Human monoclonal antibody against Hepatitis B virus surface antigen (HBsAg)

Metal acetylacetonate as a radical initiator and catalyst for polyurethane in dual-curing reaction at low temperature

Phase change memory cell using Ge 2 Sb 2 Te 5 and softly broken-down TiO 2 films for multilevel operation

One-dimensional porphyrin H-aggregates induced by solvent polarity

Influence of Substrates on the Nucleation and Growth Behaviors of Ge 2 Sb 2 Te 5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition

Anode-interface localized filamentary mechanism in resistive switchingof Ti O 2 thin films

Deposition of Piezoelectric ZnO Films by RF Magnetron Sputtering and its Application to SAW Devices

( In , Sn ) 2 O 3 ∕ Ti O 2 ∕ Pt Schottky-type diode switch for the Ti O 2 resistive switching memory array

( In , Sn ) 2 O 3 ∕ Ti O 2 ∕ Pt Schottky-type diode switch for the TiO2 resistive switching memory array

Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge 2 Sb 2 Te 5 Films on TiN/W Contact Plug

Identification of a determining parameter for resistive switching of Ti O 2 thin films

Highly reliable ReRAM technology with encapsulation process for 20nm and beyond

Study on the resistive switching time of Ti O 2 thin films

Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb2Te3) Thin Films for a Phase Change Random Access Memory

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