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Extraction of intrinsic contact resistance in organic thin-film transistors with single channel length and high capacitance density

Applied physics letters, 2021-12, Vol.119 (26)

2021

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Solution-based electrical doping of semiconducting polymer films over a limited depth

Nature materials, 2017-04, Vol.16 (4), p.474-480

2017

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A Study on Reducing Contact Resistance in Solution-Processed Organic Field-Effect Transistors

ACS applied materials & interfaces, 2016-09, Vol.8 (37), p.24744-24752

2016

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Stable Organic Field-Effect Transistors for Continuous and Nondestructive Sensing of Chemical and Biologically Relevant Molecules in Aqueous Environment

ACS applied materials & interfaces, 2014-02, Vol.6 (3), p.1616-1622

2014

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Influence of Intercell Trapped Charge on Vertical NAND Flash Memory

IEEE electron device letters, 2017-02, Vol.38 (2), p.164-167

2017

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Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping

Organic electronics, 2014-12, Vol.15 (12), p.3780-3786

2014

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New Pixel Circuit Design Employing an Additional Pixel Line Insertion in AMOLED Displays Composed by Excimer Laser-Crystallized TFTs

Journal of display technology, 2012-08, Vol.8 (8), p.479-482

2012

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Multi-layered Vertical Gate NAND Flash overcoming stacking limit for terabit density storage

2009 Symposium on VLSI Technology, 2009, p.188-189

2009

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Highly thermally stable TiN nanocrystals as charge trapping sites for nonvolatile memory device applications

Applied physics letters, 2005-03, Vol.86 (12)

2005

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Impact of metal work function on memory properties of charge-trap flash memory devices using fowler-nordheim P/E mode

IEEE electron device letters, 2006-06, Vol.27 (6), p.486-488

2006

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Formation of TaN nanocrystals embedded in silicon nitride by phase separation methods for nonvolatile memory applications

Applied physics letters, 2007-07, Vol.91 (5), p.052905-052905-3

2007

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P‐1: Uni‐Color Column Line Pentile‐Type Pixel Arrangement Design for Low Driving Power Consumption AMOLED Displays

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.1039-1042

2022

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Improved Conductance Method for Determining Interface Trap Density of Metal–Oxide–Semiconductor Device with High Series Resistance

Japanese Journal of Applied Physics, 2005-01, Vol.44 (11L), p.L1460

2005

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High work-function metal gate and high-[kappa] dielectrics for charge trap flash memory device applications

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2654

2005

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Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

ACS applied materials & interfaces, 2015-03, Vol.7 (8), p.4804-4808

2015

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Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

ACS applied materials & interfaces, 2016-11, Vol.8 (44), p.29872-29876

2016

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High work-function metal gate and high-/spl kappa/ dielectrics for charge trap flash memory device applications

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2654-2659

2005

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Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

ACS applied materials & interfaces, 2016-10, Vol.8 (44)

2016

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Effective Work Function of Scandium Nitride Gate Electrodes on SiO 2 and HfO 2

Japanese Journal of Applied Physics, 2006-01, Vol.45 (1L), p.L83

2006

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Solution-based electrical doping of semiconducting polymer films over a limited depth

Nature materials, 2016-12, Vol.16 (4)

2016

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Self-forming electrode modification in organic field-effect transistors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2016-01, Vol.4 (35), p.8297-8303

2016

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High-k Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon

Japanese Journal of Applied Physics, 2003-02, Vol.42 (Part 2, No. 2A), p.L102-L104

2003

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Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-k Gate Dielectric

Japanese Journal of Applied Physics, 2005-01, Vol.44 (1L), p.L235

2005

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IMPROVED RELIABILITY CHARACTERISTICS OF ULTRATHIN SiO2 GROWN BY LOW TEMPERATURE OZONE OXIDATION

Japanese Journal of Applied Physics, Part 1, 2002, Vol.41 (10), p.5971-5973

2002

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Self-forming electrode modification in organic field-effect transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c6tc02028c

2016-09

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Extraction of intrinsic contact resistance in organic thin-film transistors with single channel length and high capacitance density

Solution-based electrical doping of semiconducting polymer films over a limited depth

A Study on Reducing Contact Resistance in Solution-Processed Organic Field-Effect Transistors

Stable Organic Field-Effect Transistors for Continuous and Nondestructive Sensing of Chemical and Biologically Relevant Molecules in Aqueous Environment

Influence of Intercell Trapped Charge on Vertical NAND Flash Memory

Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping

New Pixel Circuit Design Employing an Additional Pixel Line Insertion in AMOLED Displays Composed by Excimer Laser-Crystallized TFTs

Multi-layered Vertical Gate NAND Flash overcoming stacking limit for terabit density storage

Highly thermally stable TiN nanocrystals as charge trapping sites for nonvolatile memory device applications

Impact of metal work function on memory properties of charge-trap flash memory devices using fowler-nordheim P/E mode

Formation of TaN nanocrystals embedded in silicon nitride by phase separation methods for nonvolatile memory applications

P‐1: Uni‐Color Column Line Pentile‐Type Pixel Arrangement Design for Low Driving Power Consumption AMOLED Displays

Improved Conductance Method for Determining Interface Trap Density of Metal–Oxide–Semiconductor Device with High Series Resistance

High work-function metal gate and high-[kappa] dielectrics for charge trap flash memory device applications

Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

High work-function metal gate and high-/spl kappa/ dielectrics for charge trap flash memory device applications

Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

Effective Work Function of Scandium Nitride Gate Electrodes on SiO 2 and HfO 2

Solution-based electrical doping of semiconducting polymer films over a limited depth

Self-forming electrode modification in organic field-effect transistors

High-k Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon

Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-k Gate Dielectric

IMPROVED RELIABILITY CHARACTERISTICS OF ULTRATHIN SiO2 GROWN BY LOW TEMPERATURE OZONE OXIDATION

Self-forming electrode modification in organic field-effect transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c6tc02028c

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