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Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

Nature communications, 2013-03, Vol.4 (1), p.1624-1624, Article 1624

2013

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Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

Advanced materials (Weinheim), 2022-04, Vol.34 (15), p.e2108425-n/a

2022

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High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

ACS nano, 2014-09, Vol.8 (9), p.9332-9340

2014

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Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

ACS nano, 2017-02, Vol.11 (2), p.1588-1596

2017

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Electrical characterization of 2D materials-based field-effect transistors

2d materials, 2021-01, Vol.8 (1), p.12002

2021

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Transferred via contacts as a platform for ideal two-dimensional transistors

Nature electronics, 2019-05, Vol.2 (5), p.187-194

2019

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Electrically Driven Reversible Phase Changes in Layered In2Se3 Crystalline Film

Advanced materials (Weinheim), 2017-11, Vol.29 (42), p.n/a

2017

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Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors

Scientific reports, 2014-02, Vol.4 (1), p.4041-4041, Article 4041

2014

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Plasma treatments to improve metal contacts in graphene field effect transistor

Journal of applied physics, 2011-10, Vol.110 (7), p.073305-073305-6

2011

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Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials

Advanced electronic materials, 2021-10, Vol.7 (10), p.n/a

2021

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Homogeneous molybdenum disulfide tunnel diode formed via chemical doping

Applied physics letters, 2018-04, Vol.112 (18)

2018

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Low-Resistance p‑Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant

ACS applied electronic materials, 2021-07, Vol.3 (7), p.2941-2947

2021

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Modulation of Contact Resistance of Dual‐Gated MoS2 FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts

Advanced science, 2023-07, Vol.10 (21), p.e2301400-n/a

2023

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Plasma and Gas‐based Semiconductor Technologies for 2D Materials with Computational Simulation & Electronic Applications

Advanced electronic materials, 2024-06, Vol.10 (6), p.n/a

2024

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Selective Electron Beam Patterning of Oxygen‐Doped WSe2 for Seamless Lateral Junction Transistors

Advanced science, 2022-09, Vol.9 (26), p.e2202465-n/a

2022

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Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs

Advanced electronic materials, 2023-03, Vol.9 (3), p.n/a

2023

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Investigating the Impact of Oxygen Surface Plasma Treatments on the Structural and Electrical Properties of Graphene

Applied Science and Convergence Technology, 2024-01, Vol.33 (1), p.7-12

2024

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Carrier transport at the metal-MoS2 interface

Nanoscale, 2015-05, Vol.7 (20), p.9222-9228

2015

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Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

Advanced materials (Weinheim), 2022-09, Vol.34 (39), p.e2202408-n/a

2022

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Effects of Plasma Treatment on Contact Resistance and Sheet Resistance of Graphene FET

한국표면공학회지, 2016, 49(2), , pp.152-158

2016

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Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

ACS nano, 2013-09, Vol.7 (9), p.7931-7936

2013

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Self-Aligned Top-Gate Structure in High-Performance 2D p‑FETs via van der Waals Integration and Contact Spacer Doping

Nano letters, 2023-12, Vol.23 (23), p.11345-11352

2023

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Transfer-free p-type graphene field-effect transistors with high mobility and on/off ratio

Carbon (New York), 2024-11, Vol.230, p.119575, Article 119575

2024

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Passivated ambipolar black phosphorus transistors

Nanoscale, 2016-07, Vol.8 (25), p.12773-12779

2016

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Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

Electrical characterization of 2D materials-based field-effect transistors

Transferred via contacts as a platform for ideal two-dimensional transistors

Electrically Driven Reversible Phase Changes in Layered In2Se3 Crystalline Film

Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect Transistors

Plasma treatments to improve metal contacts in graphene field effect transistor

Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials

Homogeneous molybdenum disulfide tunnel diode formed via chemical doping

Low-Resistance p‑Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant

Modulation of Contact Resistance of Dual‐Gated MoS2 FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts

Plasma and Gas‐based Semiconductor Technologies for 2D Materials with Computational Simulation & Electronic Applications

Selective Electron Beam Patterning of Oxygen‐Doped WSe2 for Seamless Lateral Junction Transistors

Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs

Investigating the Impact of Oxygen Surface Plasma Treatments on the Structural and Electrical Properties of Graphene

Carrier transport at the metal-MoS2 interface

Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

Effects of Plasma Treatment on Contact Resistance and Sheet Resistance of Graphene FET

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

Self-Aligned Top-Gate Structure in High-Performance 2D p‑FETs via van der Waals Integration and Contact Spacer Doping

Transfer-free p-type graphene field-effect transistors with high mobility and on/off ratio

Passivated ambipolar black phosphorus transistors

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