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Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of Y-doped HfO2 films formed by reactive sputtering

Ceramics international, 2018-08, Vol.44 (11), p.12841-12846

2018

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Investigation of temperature-dependent ferroelectric properties of Y-doped HfO2 thin film prepared by medium-frequency reactive magnetron co-sputtering

Vacuum, 2020-09, Vol.179, p.109506, Article 109506

2020

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Effect of bias voltage on Diamond-like carbon film deposited on PMMA substrate

Surface & coatings technology, 2008-08, Vol.202 (22-23), p.5386-5389

2008

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Studies on the low dielectric SiOC(–H) thin films deposited using MTMS and oxygen as precursors by UV source assisted PECVD

Surface & coatings technology, 2005-11, Vol.200 (5), p.1624-1628

2005

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Electrical properties of ZnO-based bottom-gate thin film transistors fabricated by using radio frequency magnetron sputtering

Journal of alloys and compounds, 2009-05, Vol.475 (1), p.889-892

2009

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Photodissociation effects on the electron density and on FTIR measurements in a BTMSM/Ar discharge

Journal of physics. D, Applied physics, 2007-07, Vol.40 (14), p.4164-4167

2007

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Characteristics of low-k SiOC(-H) films deposited at various substrate temperature by PECVD using DMDMS/O2 precursor

Thin solid films, 2007-12, Vol.516 (2-4), p.340-344

2007

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The effects of UV radiation on SiC(O)N/SiOC(−H) thin films grown on Si substrates using plasma-enhanced atomic layer deposition

Thin solid films, 2013-11, Vol.547, p.151-155

2013

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Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering

Solid-state electronics, 2008-05, Vol.52 (5), p.813-816

2008

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Ultraviolet irradiation effect on the properties of leakage current and dielectric breakdown of low-dielectric-constant SiOC( H) films using comb capacitor structure

Thin solid films, 2011-08, Vol.519 (20), p.6732-6736

2011

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Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties

Journal of the Korean Physical Society, 2016, 68(5), , pp.679-685

2016

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Plasma enhanced chemical vapor deposition of low dielectric constant SiOC(-H) films using MTES/O2 precursor

Thin solid films, 2007-04, Vol.515 (12), p.5040-5044

2007

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Study of Cu diffusion behavior in low dielectric constant SiOC(–H) films deposited by plasma-enhanced chemical vapor deposition

Thin solid films, 2010-09, Vol.518 (22), p.6474-6477

2010

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Effect of catalyst for nickel films for NiSi formation with improved interface roughness

Thin solid films, 2011-08, Vol.519 (20), p.6658-6661

2011

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Electrical characterization of low-k films with nano-pore structure prepared with DMDMOS/O2 precursors

Surface & coatings technology, 2008-08, Vol.202 (22-23), p.5688-5692

2008

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Effect of evaporated copper and aluminum on post-annealed SiOC(–H) films deposited using plasma-enhanced chemical vapor deposition

Thin solid films, 2010-09, Vol.518 (22), p.6469-6473

2010

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Plasma characteristics of low-k SiOC(–H) films prepared by using plasma enhanced chemical vapor deposition from DMDMS/O2 precursors

Surface & coatings technology, 2008-08, Vol.202 (22-23), p.5693-5696

2008

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Structural characterization and electro-physical properties for SiOC(–H) low-k dielectric films

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.5218-5220

2009

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Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition

Journal of the Korean Physical Society, 2013, 62(8), , pp.1143-1149

2013

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Nanoindentation ‘pop-in’ phenomenon in epitaxial ZnO thin films on sapphire substrates

Materials characterization, 2008-04, Vol.59 (4), p.359-364

2008

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The influence of carbon content in carbon-doped silicon oxide film by thermal treatment

Thin solid films, 2003-07, Vol.435 (1), p.165-169

2003

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Low dielectric constant CF/SiOF composite film deposition in a helicon plasma reactor

Thin solid films, 1999-03, Vol.341 (1), p.109-111

1999

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Deposition and Characterization of Porous Low-Dielectric-Constant SiOC(-H) Thin Films Deposited from TES/O2 precursors by Using Plasma-Enhanced Chemical Vapor Deposition

Journal of the Korean Physical Society, 2008, 53(1), , pp.351-356

2008

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Effects of various additive gases on chemical dry etching rate enhancement of low-k SiOCH layer in F2/Ar remote plasmas

Thin solid films, 2008-04, Vol.516 (11), p.3549-3553

2008

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Investigation of low dielectric carbon-doped silicon oxide films prepared by PECVD using methyltrimethoxysilane precursor

Thin solid films, 2006-05, Vol.506 (Complete), p.50-54

2006

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Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of Y-doped HfO2 films formed by reactive sputtering

Investigation of temperature-dependent ferroelectric properties of Y-doped HfO2 thin film prepared by medium-frequency reactive magnetron co-sputtering

Effect of bias voltage on Diamond-like carbon film deposited on PMMA substrate

Studies on the low dielectric SiOC(–H) thin films deposited using MTMS and oxygen as precursors by UV source assisted PECVD

Electrical properties of ZnO-based bottom-gate thin film transistors fabricated by using radio frequency magnetron sputtering

Photodissociation effects on the electron density and on FTIR measurements in a BTMSM/Ar discharge

Characteristics of low-k SiOC(-H) films deposited at various substrate temperature by PECVD using DMDMS/O2 precursor

The effects of UV radiation on SiC(O)N/SiOC(−H) thin films grown on Si substrates using plasma-enhanced atomic layer deposition

Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering

Ultraviolet irradiation effect on the properties of leakage current and dielectric breakdown of low-dielectric-constant SiOC( H) films using comb capacitor structure

Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties

Plasma enhanced chemical vapor deposition of low dielectric constant SiOC(-H) films using MTES/O2 precursor

Study of Cu diffusion behavior in low dielectric constant SiOC(–H) films deposited by plasma-enhanced chemical vapor deposition

Effect of catalyst for nickel films for NiSi formation with improved interface roughness

Electrical characterization of low-k films with nano-pore structure prepared with DMDMOS/O2 precursors

Effect of evaporated copper and aluminum on post-annealed SiOC(–H) films deposited using plasma-enhanced chemical vapor deposition

Plasma characteristics of low-k SiOC(–H) films prepared by using plasma enhanced chemical vapor deposition from DMDMS/O2 precursors

Structural characterization and electro-physical properties for SiOC(–H) low-k dielectric films

Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition

Nanoindentation ‘pop-in’ phenomenon in epitaxial ZnO thin films on sapphire substrates

The influence of carbon content in carbon-doped silicon oxide film by thermal treatment

Low dielectric constant CF/SiOF composite film deposition in a helicon plasma reactor

Deposition and Characterization of Porous Low-Dielectric-Constant SiOC(-H) Thin Films Deposited from TES/O2 precursors by Using Plasma-Enhanced Chemical Vapor Deposition

Effects of various additive gases on chemical dry etching rate enhancement of low-k SiOCH layer in F2/Ar remote plasmas

Investigation of low dielectric carbon-doped silicon oxide films prepared by PECVD using methyltrimethoxysilane precursor

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