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Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial Bi4Ti3O12 thin films

Journal of applied physics, 1998-10, Vol.84 (8), p.4428-4435

1998

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The effect of strain on the interdiffusion in InGaAs/GaAs quantum wells

Applied physics letters, 1995-09, Vol.67 (10), p.1417-1419

1995

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Electron distribution and capacitance-voltage profiles of multiple quantum well structure from self-consistent simulations

Applied physics letters, 1997-06, Vol.70 (22), p.2987-2989

1997

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Effect of wet oxidized AlxGa1−xAs layer on the interdiffusion of InGaAs/GaAs quantum wells

Journal of applied physics, 1998-06, Vol.83 (11), p.5779-5782

1998

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Influence of carrier flow on the temperature-dependent capacitance-voltage profiles of heterojunction structures

Applied physics letters, 1996-10, Vol.69 (18), p.2740-2742

1996

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Analysis of the performance of 1.55-μm InGaAs-InP tensile strained quantum-well lasers

IEEE journal of quantum electronics, 1999-08, Vol.35 (8), p.1207-1212

1999

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Interface states in In0.5Ga0.5P/AlxGa1−xAs heterostructures grown by liquid phase epitaxy

Journal of applied physics, 1997-06, Vol.81 (11), p.7362-7366

1997

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Dependence of anisotropic strain relaxation on composition of lattice-mismatched InGaAsP

Japanese Journal of Applied Physics, 1997-02, Vol.36 (2A), p.L79-L81

1997

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Theoretical investigation of gain and linewidth enhancement factor for 1.55-μm tensile strained quantum-well lasers

Journal of lightwave technology, 1997-04, Vol.15 (4), p.711-716

1997

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Differential gain of strained InGaAs/InGaAsP quantum-well lasers lattice matched to GaAs

Journal of applied physics, 1996-02, Vol.79 (4), p.2157-2159

1996

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Effect of GaAsyP1−y(0⩽y<1) interlayers on the structural, optical, and electrical characteristics of GaAs/InGaP heterojunction

Applied physics letters, 2000-04, Vol.76 (17), p.2379-2381

2000

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Effects of Substrate Misorientation on the Formation and Characteristics of Self-Assembled InP/InGaP Quantum Dots

Japanese Journal of Applied Physics, 1998-04, Vol.37 (4A), p.L366

Guk Jeong, Yong-Hwan Kwon

1998

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Characteristics of electron traps in In0.5Ga0.5P generated by recombination enhanced defect reactions

Applied physics letters, 1993-09, Vol.63 (10), p.1366-1368

1993

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Spatial resolution of capacitance-voltage profiles in quantum well structures

Applied physics letters, 1998-03, Vol.72 (10), p.1196-1198

1998

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Determination of interdiffusion coefficients of cations and anions in InGaAs/InP superlattice

Applied physics letters, 1997-09, Vol.71 (12), p.1670-1672

1997

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Negative resistance of AlGaAs diodes co-doped with Si and Mn

Japanese Journal of Applied Physics, 1997-11, Vol.36 (11B), p.L1481-L1482

1997

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Amphoteric behavior of germanium in In0.5Ga0.5P grown by liquid phase epitaxy

Applied physics letters, 1993-04, Vol.62 (14), p.1620-1622

1993

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Lateral oxidation of AlAs layers at elevated water vapour pressure using a closed-chamber system

Semiconductor science and technology, 2000-10, Vol.15 (10), p.L35-L38

2000

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Difference of interface trap passivation in Schottky contacts formed on (NH4)2Sx-treated GaAs and In0.5Ga0.5P

Journal of applied physics, 1997-03, Vol.81 (6), p.2904-2906

1997

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Chemical trends of S-, Se-, and Te-related DX centers in InGaP

Applied physics letters, 1995-10, Vol.67 (17), p.2533-2535

1995

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Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures on a GaAs substrate

Applied physics letters, 1996-12, Vol.69 (24), p.3740-3742

1996

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The role of complementary species in P/Be and Ar/Be Co-implanted InP

Journal of electronic materials, 1992-08, Vol.21 (8), p.825-829

1992

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Carbon doping and growth rate reduction by CCl4 during metalorganic chemical-vapor deposition of GaAs

Journal of applied physics, 1994-11, Vol.76 (9), p.5079-5084

1994

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Influence of partial dopant ionization on the capacitance–voltage profiles of delta-doped structures

Applied physics letters, 1998-06, Vol.72 (26), p.3491-3493

1998

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Analysis of abnormal x-ray diffraction peak broadening from InGaAs/GaAs multiple quantum wells

Journal of applied physics, 1997-11, Vol.82 (10), p.4865-4869

1997

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Imprint failures and asymmetric electrical properties induced by thermal processes in epitaxial Bi4Ti3O12 thin films

The effect of strain on the interdiffusion in InGaAs/GaAs quantum wells

Electron distribution and capacitance-voltage profiles of multiple quantum well structure from self-consistent simulations

Effect of wet oxidized AlxGa1−xAs layer on the interdiffusion of InGaAs/GaAs quantum wells

Influence of carrier flow on the temperature-dependent capacitance-voltage profiles of heterojunction structures

Analysis of the performance of 1.55-μm InGaAs-InP tensile strained quantum-well lasers

Interface states in In0.5Ga0.5P/AlxGa1−xAs heterostructures grown by liquid phase epitaxy

Dependence of anisotropic strain relaxation on composition of lattice-mismatched InGaAsP

Theoretical investigation of gain and linewidth enhancement factor for 1.55-μm tensile strained quantum-well lasers

Differential gain of strained InGaAs/InGaAsP quantum-well lasers lattice matched to GaAs

Effect of GaAsyP1−y(0⩽y<1) interlayers on the structural, optical, and electrical characteristics of GaAs/InGaP heterojunction

Effects of Substrate Misorientation on the Formation and Characteristics of Self-Assembled InP/InGaP Quantum Dots

Characteristics of electron traps in In0.5Ga0.5P generated by recombination enhanced defect reactions

Spatial resolution of capacitance-voltage profiles in quantum well structures

Determination of interdiffusion coefficients of cations and anions in InGaAs/InP superlattice

Negative resistance of AlGaAs diodes co-doped with Si and Mn

Amphoteric behavior of germanium in In0.5Ga0.5P grown by liquid phase epitaxy

Lateral oxidation of AlAs layers at elevated water vapour pressure using a closed-chamber system

Difference of interface trap passivation in Schottky contacts formed on (NH4)2Sx-treated GaAs and In0.5Ga0.5P

Chemical trends of S-, Se-, and Te-related DX centers in InGaP

Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures on a GaAs substrate

The role of complementary species in P/Be and Ar/Be Co-implanted InP

Carbon doping and growth rate reduction by CCl4 during metalorganic chemical-vapor deposition of GaAs

Influence of partial dopant ionization on the capacitance–voltage profiles of delta-doped structures

Analysis of abnormal x-ray diffraction peak broadening from InGaAs/GaAs multiple quantum wells

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