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A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

IEEE journal of solid-state circuits, 2008-01, Vol.43 (1), p.150-162

2008

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Comparative Study of the Properties of Cu-Cr-Mo System Electrical Contact Material by Sintering and Infiltration Methods

Metals (Basel ), 2021-05, Vol.11 (5), p.700

2021

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Production of High-Purity Tantalum Metal Powder for Capacitors Using Self-Propagating High-Temperature Synthesis

Archives of metallurgy and materials, 2021-01, Vol.66 (4), p.935-939

2021

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Effects of ZrO2 and Al2O3 Addition on the Physical Properties of Cu-Mo-Cr Alloy by Liquid Phase Sintering

Archives of metallurgy and materials, 2021-01, Vol.66 (3), p.683-687

2021

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Comparison of physical properties of Ta-Cu-X contact materials with mixing of additives

International journal of refractory metals & hard materials, 2021-12, Vol.101, p.105670, Article 105670

2021

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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

IEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218

2007

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A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW

2011 IEEE International Solid-State Circuits Conference, 2011, p.500-502

2011

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Enhanced write performance of a 64-mb phase-change random access memory

IEEE journal of solid-state circuits, 2006-01, Vol.41 (1), p.122-126

2006

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A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005, Vol.40 (1), p.293-300

2005

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A chip-level post-CMOS via-last Cu TSV process for multi-layer homogeneous 3D integration

2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2016, p.1-4

2016

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Highly textured and conductive undoped ZnO film using hydrogen post-treatment

Applied physics letters, 1997-06, Vol.70 (26), p.3516-3518

1997

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A simple optical properties modeling of microcrystalline silicon for the energy conversion application by the effective medium approximation method

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3A), p.1094-1098

1997

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The carrier injection type thin-film light-emitting diode with hydrogenated amorphous carbon active layer

Japanese Journal of Applied Physics, 1997-09, Vol.36 (9AB), p.L1188-L1190

1997

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A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

IEEE journal of solid-state circuits, 2007-01, Vol.42 (1), p.210-218

2007

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Effects of ZrO2 and Al2O3 Addition on the Physical Properties of Cu-Mo-Cr Alloy by Liquid Phase Sintering

Archives of metallurgy and materials, 2021-01, p.683-687

2021

Volltextzugriff (PDF)

Production of High-Purity Tantalum Metal Powder for Capacitors Using Self-Propagating High-Temperature Synthesis

Archives of metallurgy and materials, 2021-01, p.935-939

2021

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Processor-Based Built-in Self-Optimizer for 90nm Diode-Switch PRAM

2007 IEEE Symposium on VLSI Circuits, 2007, p.184-185

2007

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A Simple Optical Properties Modeling of Microcrystalline Silicon by the Effective Medium Approximation Method

MRS proceedings, 1996, Vol.426, Article 533

1996

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Properties of ZnO:Al thin films for solar cells by pyrosol method

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), 1994, Vol.1, p.630-633 vol.1

1994

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A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.293

2005

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A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.293-300

2005

Volltextzugriff (PDF)

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.293-300

2005

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Improvement of amorphous-carbon active-layer thin-film light-emitting diodes using room-temperature ultrasound treatment

Applied physics letters, 1999-08, Vol.75 (6), p.760-762

1999

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A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007, p.472-616

2007

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A 0.18μm 3.0V 64Mb non-volatile phase-transition random-access memory (PRAM)

First edition, 2004

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A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Comparative Study of the Properties of Cu-Cr-Mo System Electrical Contact Material by Sintering and Infiltration Methods

Production of High-Purity Tantalum Metal Powder for Capacitors Using Self-Propagating High-Temperature Synthesis

Effects of ZrO2 and Al2O3 Addition on the Physical Properties of Cu-Mo-Cr Alloy by Liquid Phase Sintering

Comparison of physical properties of Ta-Cu-X contact materials with mixing of additives

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW

Enhanced write performance of a 64-mb phase-change random access memory

A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A chip-level post-CMOS via-last Cu TSV process for multi-layer homogeneous 3D integration

Highly textured and conductive undoped ZnO film using hydrogen post-treatment

A simple optical properties modeling of microcrystalline silicon for the energy conversion application by the effective medium approximation method

The carrier injection type thin-film light-emitting diode with hydrogenated amorphous carbon active layer

A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Effects of ZrO2 and Al2O3 Addition on the Physical Properties of Cu-Mo-Cr Alloy by Liquid Phase Sintering

Production of High-Purity Tantalum Metal Powder for Capacitors Using Self-Propagating High-Temperature Synthesis

Processor-Based Built-in Self-Optimizer for 90nm Diode-Switch PRAM

A Simple Optical Properties Modeling of Microcrystalline Silicon by the Effective Medium Approximation Method

Properties of ZnO:Al thin films for solar cells by pyrosol method

A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

Improvement of amorphous-carbon active-layer thin-film light-emitting diodes using room-temperature ultrasound treatment

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

A 0.18μm 3.0V 64Mb non-volatile phase-transition random-access memory (PRAM)

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