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Computational discovery of p-type transparent oxide semiconductors using hydrogen descriptor

npj computational materials, 2018-04, Vol.4 (1), p.1-7, Article 17

2018

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Impact of transient currents caused by alternating drain stress in oxide semiconductors

Scientific reports, 2017-08, Vol.7 (1), p.9782-9, Article 9782

2017

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Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3653-3657

2015

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IEEE_Xplore

The role of oxygen in dramatically enhancing the electrical properties of solution-processed Zn–Sn–O thin-film transistors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (26), p.6521-6526

2017

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InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors With High Mobility and High Uniformity

IEEE electron device letters, 2016-10, Vol.37 (10), p.1295-1298

2016

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IEEE_Xplore

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium-gallium-zinc oxide thin-film transistor

Journal of Information Display, 2016, 17(2), , pp.65-71

2016

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Hydrated alizarin complexes: hydrogen bonding and proton transfer

Physical chemistry chemical physics : PCCP, 2012-07, Vol.14 (25), p.8919-8924

2012

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Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.830-834

2018

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Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography

IEEE electron device letters, 2024-06, Vol.45 (6), p.1020-1023

2024

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IEEE_Xplore

P‐19: Effect of RTP Annealing Using UV and DUV Light on the Properties of the Al‐IZTO TFTs

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.1249-1251

2018

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Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors

IEEE electron device letters, 2021-09, Vol.42 (9), p.1327-1330

2021

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IEEE_Xplore

Light-adaptable display for the future advertising service

Journal of Information Display, 2016, 17(4), , pp.159-168

2016

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48‐1: Invited Paper: Oxide Semiconductor Thin‐Film Transistors with Deep Submicron Channel Fabricated with Hyperlithography

SID International Symposium Digest of technical papers, 2023-06, Vol.54 (1), p.692-694

2023

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Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

ACS applied materials & interfaces, 2023-11, Vol.15 (44), p.51339-51349

2023

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Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p−n Semiconductor Heterojunction Structure

ACS applied materials & interfaces, 2024-06, Vol.16 (24), p.31254-31260

2024

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Promotion of Processability in a p‑Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer

ACS applied materials & interfaces, 2024-04, Vol.16 (18), p.23459-23466

2024

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32‐4: Metal Oxide Thin‐Film Transistors with 0.1 μm channel length formed by Self‐Aligned Nanogap Patterning

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.388-390

2022

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Low temperature crystallization of atomic-layer-deposited SrTiO3 films with an extremely low equivalent oxide thickness of sub-0.4 nm

Applied surface science, 2024-08, Vol.664, p.160243, Article 160243

2024

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Effect of hydrogen diffusion in an In-Ga-Zn-O thin film transistor with an aluminum oxide gate insulator on its electrical properties

RSC advances, 2018-01, Vol.8 (10), p.5622-5628

2018

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The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors

Physica status solidi. A, Applications and materials science, 2021-09, Vol.218 (18), p.n/a

2021

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P‐25: Tailoring the Threshold Voltage Control of Oxide Thin‐Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure

SID International Symposium Digest of technical papers, 2024-06, Vol.55 (1), p.1452-1454

2024

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Defects and Charge-Trapping Mechanisms of Double-Active-Layer In–Zn–O and Al–Sn–Zn–In–O Thin-Film Transistors

ACS applied materials & interfaces, 2017-03, Vol.9 (11), p.9271-9279

2017

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Transparent phototransistor with high responsivity, sensitivity, and detectivity from heterojunction metal oxide semiconductors

Applied physics letters, 2020-09, Vol.117 (11)

2020

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The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors

Physica status solidi. A, Applications and materials science, 2021-09, Vol.218 (18), p.n/a

2021

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Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 \text^/\text \cdot \text for High-Speed Operation

IEEE electron device letters, 2018-04, Vol.39 (4), p.508-511

2018

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IEEE_Xplore

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Computational discovery of p-type transparent oxide semiconductors using hydrogen descriptor

Impact of transient currents caused by alternating drain stress in oxide semiconductors

Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

The role of oxygen in dramatically enhancing the electrical properties of solution-processed Zn–Sn–O thin-film transistors

InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors With High Mobility and High Uniformity

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium-gallium-zinc oxide thin-film transistor

Hydrated alizarin complexes: hydrogen bonding and proton transfer

Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States

Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography

P‐19: Effect of RTP Annealing Using UV and DUV Light on the Properties of the Al‐IZTO TFTs

Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors

Light-adaptable display for the future advertising service

48‐1: Invited Paper: Oxide Semiconductor Thin‐Film Transistors with Deep Submicron Channel Fabricated with Hyperlithography

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p−n Semiconductor Heterojunction Structure

Promotion of Processability in a p‑Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer

32‐4: Metal Oxide Thin‐Film Transistors with 0.1 μm channel length formed by Self‐Aligned Nanogap Patterning

Low temperature crystallization of atomic-layer-deposited SrTiO3 films with an extremely low equivalent oxide thickness of sub-0.4 nm

Effect of hydrogen diffusion in an In-Ga-Zn-O thin film transistor with an aluminum oxide gate insulator on its electrical properties

The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors

P‐25: Tailoring the Threshold Voltage Control of Oxide Thin‐Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure

Defects and Charge-Trapping Mechanisms of Double-Active-Layer In–Zn–O and Al–Sn–Zn–In–O Thin-Film Transistors

Transparent phototransistor with high responsivity, sensitivity, and detectivity from heterojunction metal oxide semiconductors

The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors

Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 \text^/\text \cdot \text for High-Speed Operation

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