UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Implementation of a robust virtual metrology for plasma etching through effective variable selection and recursive update technology

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-01, Vol.32 (1)

2014

Volltextzugriff (PDF)

An effective procedure for sensor variable selection and utilization in plasma etching for semiconductor manufacturing

Computers & chemical engineering, 2014-02, Vol.61, p.20-29

2014

Volltextzugriff (PDF)

Experimental investigation of the impact of LWR on sub-100-nm device performance

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.1984-1988

2004

Volltextzugriff (PDF)

Etching characteristics and modeling for oval-shaped contact

Thin solid films, 2007-04, Vol.515 (12), p.4923-4927

2007

Volltextzugriff (PDF)

New types of dose distributions for vertical sidewall minimizing total dose in 3-D electron-beam proximity effect correction of nanoscale features

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-11, Vol.30 (6)

2012

Volltextzugriff (PDF)

Status of EUV Resist and Process Development at IC Manufacture to Implement EUV Lithography to 2X DRAM and Beyond

Journal of Photopolymer Science and Technology, 2011/06/21, Vol.24(2), pp.119-125

2011

Volltextzugriff (PDF)

Fast simulation of stochastic exposure distribution in electron-beam lithography

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-11, Vol.30 (6)

2012

Volltextzugriff (PDF)

Optical Performance of Extreme Ultraviolet Lithography Mask with an Indium Tin Oxide Absorber

Journal of nanoscience and nanotechnology, 2012-04, Vol.12 (4), p.3330-3333

2012

Volltextzugriff (PDF)

Effects of various plasma pretreatments on 193 nm photoresist and linewidth roughness after etching

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-11, Vol.24 (6), p.2645-2652

2006

Volltextzugriff (PDF)

Analytic modeling for the limit of mask mean-to-target from the photolithographic standpoint

Applied physics letters, 2004-04, Vol.84 (16), p.3004-3006

2004

Volltextzugriff (PDF)

A New Method for Line Width Roughness Mitigation

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6S), p.6

2011

Volltextzugriff (PDF)

A New Method for Line Width Roughness Mitigation

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6), p.06GD01-06GD01-4

2011

Volltextzugriff (PDF)

Novel Top-coat Materials Containing a Bulky Silicon Group for ArF Immersion Lithography

Journal of Photopolymer Science and Technology, 2006, Vol.19(5), pp.579-583

2006

Volltextzugriff (PDF)

Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask

Japanese Journal of Applied Physics, 2012-09, Vol.51 (9), p.096503-096503-6

2012

Volltextzugriff (PDF)

Most Efficient Alternative Manner of Patterning sub-80 nm Contact Holes and Trenches with 193 nm Lithography

Japanese Journal of Applied Physics, 2004-06, Vol.43 (6S), p.3663

2004

Volltextzugriff (PDF)

Carbon Contamination Analysis and Its Effect on Extreme Ultra Violet Mask Imaging Performance Using Coherent Scattering Microscopy/In-Situ Accelerated Contamination System

Journal of nanoscience and nanotechnology, 2011-07, Vol.11 (7), p.5717-5722

2011

Volltextzugriff (PDF)

Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask

Japanese Journal of Applied Physics, 2012-09, Vol.51 (9R), p.96503

2012

Volltextzugriff (PDF)

Quantitative Evaluation of Grid Size Effect on Critical Dimension Uniformity Improvement

Japanese Journal of Applied Physics, 2004-06, Vol.43 (6S), p.3680

2004

Volltextzugriff (PDF)

Dissolution Enhancement of Immersion Barrier Coat by Post Exposure Bake

Journal of Photopolymer Science and Technology, 2005, Vol.18(5), pp.621-625

2005

Volltextzugriff (PDF)

Converging lithography by combination of electrostatic layer-by-layer self-assembly and 193 nm photolithography: Top-down meets bottom-up

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-09, Vol.24 (5), p.2209-2213

2006

Volltextzugriff (PDF)

Double-Patterning Technique Using Plasma Treatment of Photoresist

Japanese Journal of Applied Physics, 2007-09, Vol.46 (9S), p.6135

2007

Volltextzugriff (PDF)

ArF Bi-layer Resist for sub-90nm L/S Fabrication

Journal of photopolymer science and technology, 2003, Vol.16 (4), p.499-505

2003

Volltextzugriff (PDF)

Pattern Collapse Improvement in ArF Resist: Effect of Surfactant-added Rinse and Soft Bake

Journal of Photopolymer Science and Technology, 2003, Vol.16(3), pp.463-466

2003

Volltextzugriff (PDF)

Chemical shrinkage material: Nanoscale patterning through interpolymer complex

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.795-799

2006

Volltextzugriff (PDF)

Which Mask is Preferred for Sub-60 nm Node Imaging?

Japanese Journal of Applied Physics, 2007-09, Vol.46 (9S), p.6124

2007

Volltextzugriff (PDF)

1 – 25 von 215

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(174)
Mit Volltextzugriff
(194)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Implementation of a robust virtual metrology for plasma etching through effective variable selection and recursive update technology

An effective procedure for sensor variable selection and utilization in plasma etching for semiconductor manufacturing

Experimental investigation of the impact of LWR on sub-100-nm device performance

Etching characteristics and modeling for oval-shaped contact

New types of dose distributions for vertical sidewall minimizing total dose in 3-D electron-beam proximity effect correction of nanoscale features

Status of EUV Resist and Process Development at IC Manufacture to Implement EUV Lithography to 2X DRAM and Beyond

Fast simulation of stochastic exposure distribution in electron-beam lithography

Optical Performance of Extreme Ultraviolet Lithography Mask with an Indium Tin Oxide Absorber

Effects of various plasma pretreatments on 193 nm photoresist and linewidth roughness after etching

Analytic modeling for the limit of mask mean-to-target from the photolithographic standpoint

A New Method for Line Width Roughness Mitigation

A New Method for Line Width Roughness Mitigation

Novel Top-coat Materials Containing a Bulky Silicon Group for ArF Immersion Lithography

Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask

Most Efficient Alternative Manner of Patterning sub-80 nm Contact Holes and Trenches with 193 nm Lithography

Carbon Contamination Analysis and Its Effect on Extreme Ultra Violet Mask Imaging Performance Using Coherent Scattering Microscopy/In-Situ Accelerated Contamination System

Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask

Quantitative Evaluation of Grid Size Effect on Critical Dimension Uniformity Improvement

Dissolution Enhancement of Immersion Barrier Coat by Post Exposure Bake

Converging lithography by combination of electrostatic layer-by-layer self-assembly and 193 nm photolithography: Top-down meets bottom-up

Double-Patterning Technique Using Plasma Treatment of Photoresist

ArF Bi-layer Resist for sub-90nm L/S Fabrication

Pattern Collapse Improvement in ArF Resist: Effect of Surfactant-added Rinse and Soft Bake

Chemical shrinkage material: Nanoscale patterning through interpolymer complex

Which Mask is Preferred for Sub-60 nm Node Imaging?

Suchergebnisse filtern