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Implementation of a robust virtual metrology for plasma etching through effective variable selection and recursive update technology

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-01, Vol.32 (1)

2014

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Experimental investigation of the impact of LWR on sub-100-nm device performance

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.1984-1988

2004

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Etching characteristics and modeling for oval-shaped contact

Thin solid films, 2007-04, Vol.515 (12), p.4923-4927

2007

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New types of dose distributions for vertical sidewall minimizing total dose in 3-D electron-beam proximity effect correction of nanoscale features

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-11, Vol.30 (6)

2012

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Status of EUV Resist and Process Development at IC Manufacture to Implement EUV Lithography to 2X DRAM and Beyond

Journal of Photopolymer Science and Technology, 2011/06/21, Vol.24(2), pp.119-125

2011

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Fast simulation of stochastic exposure distribution in electron-beam lithography

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-11, Vol.30 (6)

2012

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Analytic modeling for the limit of mask mean-to-target from the photolithographic standpoint

Applied physics letters, 2004-04, Vol.84 (16), p.3004-3006

2004

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Optical Performance of Extreme Ultraviolet Lithography Mask with an Indium Tin Oxide Absorber

Journal of nanoscience and nanotechnology, 2012-04, Vol.12 (4), p.3330-3333

2012

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Effects of various plasma pretreatments on 193 nm photoresist and linewidth roughness after etching

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-11, Vol.24 (6), p.2645-2652

2006

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Most Efficient Alternative Manner of Patterning sub-80 nm Contact Holes and Trenches with 193 nm Lithography

Japanese Journal of Applied Physics, 2004-06, Vol.43 (6S), p.3663

2004

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Novel Top-coat Materials Containing a Bulky Silicon Group for ArF Immersion Lithography

Journal of Photopolymer Science and Technology, 2006, Vol.19(5), pp.579-583

2006

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A New Method for Line Width Roughness Mitigation

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6S), p.6

2011

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A New Method for Line Width Roughness Mitigation

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6), p.06GD01-06GD01-4

2011

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Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask

Japanese Journal of Applied Physics, 2012-09, Vol.51 (9), p.096503-096503-6

2012

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Quantitative Evaluation of Grid Size Effect on Critical Dimension Uniformity Improvement

Japanese Journal of Applied Physics, 2004-06, Vol.43 (6S), p.3680

2004

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Carbon Contamination Analysis and Its Effect on Extreme Ultra Violet Mask Imaging Performance Using Coherent Scattering Microscopy/In-Situ Accelerated Contamination System

Journal of nanoscience and nanotechnology, 2011-07, Vol.11 (7), p.5717-5722

2011

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Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask

Japanese Journal of Applied Physics, 2012-09, Vol.51 (9R), p.96503

2012

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Dissolution Enhancement of Immersion Barrier Coat by Post Exposure Bake

Journal of Photopolymer Science and Technology, 2005, Vol.18(5), pp.621-625

2005

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Pattern Collapse Improvement in ArF Resist: Effect of Surfactant-added Rinse and Soft Bake

Journal of Photopolymer Science and Technology, 2003, Vol.16(3), pp.463-466

2003

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ArF Bi-layer Resist for sub-90nm L/S Fabrication

Journal of photopolymer science and technology, 2003, Vol.16 (4), p.499-505

2003

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Converging lithography by combination of electrostatic layer-by-layer self-assembly and 193 nm photolithography: Top-down meets bottom-up

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-09, Vol.24 (5), p.2209-2213

2006

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Effect of extreme ultraviolet photoresist underlayer optical properties on imaging performance

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-11, Vol.33 (6)

2015

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Double-Patterning Technique Using Plasma Treatment of Photoresist

Japanese Journal of Applied Physics, 2007-09, Vol.46 (9S), p.6135

2007

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Chemical shrinkage material: Nanoscale patterning through interpolymer complex

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.795-799

2006

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Impact of EUV Pellicle Transmittance on Imaging Performance Analyzed by Coherent Scattering Microscopy

Nanoscience and nanotechnology letters, 2016-07, Vol.8 (7), p.615-619

2016

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Implementation of a robust virtual metrology for plasma etching through effective variable selection and recursive update technology

Experimental investigation of the impact of LWR on sub-100-nm device performance

Etching characteristics and modeling for oval-shaped contact

New types of dose distributions for vertical sidewall minimizing total dose in 3-D electron-beam proximity effect correction of nanoscale features

Status of EUV Resist and Process Development at IC Manufacture to Implement EUV Lithography to 2X DRAM and Beyond

Fast simulation of stochastic exposure distribution in electron-beam lithography

Analytic modeling for the limit of mask mean-to-target from the photolithographic standpoint

Optical Performance of Extreme Ultraviolet Lithography Mask with an Indium Tin Oxide Absorber

Effects of various plasma pretreatments on 193 nm photoresist and linewidth roughness after etching

Most Efficient Alternative Manner of Patterning sub-80 nm Contact Holes and Trenches with 193 nm Lithography

Novel Top-coat Materials Containing a Bulky Silicon Group for ArF Immersion Lithography

A New Method for Line Width Roughness Mitigation

A New Method for Line Width Roughness Mitigation

Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask

Quantitative Evaluation of Grid Size Effect on Critical Dimension Uniformity Improvement

Carbon Contamination Analysis and Its Effect on Extreme Ultra Violet Mask Imaging Performance Using Coherent Scattering Microscopy/In-Situ Accelerated Contamination System

Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask

Dissolution Enhancement of Immersion Barrier Coat by Post Exposure Bake

Pattern Collapse Improvement in ArF Resist: Effect of Surfactant-added Rinse and Soft Bake

ArF Bi-layer Resist for sub-90nm L/S Fabrication

Converging lithography by combination of electrostatic layer-by-layer self-assembly and 193 nm photolithography: Top-down meets bottom-up

Effect of extreme ultraviolet photoresist underlayer optical properties on imaging performance

Double-Patterning Technique Using Plasma Treatment of Photoresist

Chemical shrinkage material: Nanoscale patterning through interpolymer complex

Impact of EUV Pellicle Transmittance on Imaging Performance Analyzed by Coherent Scattering Microscopy

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