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Characterization of SiO2 Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas

Materials, 2021-09, Vol.14 (17), p.5036

2021

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Analysis on crossing frequency in transmission microwave frequency spectrum of the cutoff probe

Physics of plasmas, 2023-02, Vol.30 (2)

2023

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Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO2

Sensors (Basel, Switzerland), 2022-08, Vol.22 (16), p.6029

2022

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Development of a Noninvasive Real-Time Ion Energy Distribution Monitoring System Applicable to Collisional Plasma Sheath

Sensors (Basel, Switzerland), 2022-08, Vol.22 (16), p.6254

2022

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Contribution of Ion Energy and Flux on High-Aspect Ratio SiO2 Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C4F8 Plasma: Individual Ion Energy and Flux Controlled

Materials, 2023-05, Vol.16 (10), p.3820

2023

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Enhancement of Ar Ion Flux on the Substrate by Heterogeneous Charge Transfer Collision of Ar Atom with He Ion in an Inductively Coupled Ar/He Plasma

Materials, 2023-08, Vol.16 (17), p.5746

2023

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Determination of Plasma Potential Using an Emissive Probe with Floating Potential Method

Materials, 2023-03, Vol.16 (7), p.2762

2023

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A unified global model accompanied with a voltage and current sensor for low-pressure capacitively coupled RF discharge

Applied physics express, 2024-09, Vol.17 (9), p.96001

2024

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Refined Appearance Potential Mass Spectrometry for High Precision Radical Density Quantification in Plasma

Sensors (Basel, Switzerland), 2022-08, Vol.22 (17), p.6589

2022

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Characterization of SiO2 Plasma Etching with Perfluorocarbon (C4F8 and C6F6) and Hydrofluorocarbon (CHF3 and C4H2F6) Precursors for the Greenhouse Gas Emissions Reduction

Materials, 2023-08, Vol.16 (16), p.5624

2023

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Performance Analysis of Inter-Domain Handoff Scheme Based on Virtual Layer in PMIPv6 Networks for IP-Based Internet of Things

PloS one, 2017-01, Vol.12 (1), p.e0170566-e0170566

2017

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On the Quenching of Electron Temperature in Inductively Coupled Plasma

Materials, 2023-04, Vol.16 (8), p.3219

2023

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Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma

Nanomaterials (Basel, Switzerland), 2022-11, Vol.12 (22), p.3963

2022

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Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO2 Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing

Micromachines (Basel), 2022-10, Vol.13 (11), p.1856

2022

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Design and Performance Analysis of Sensor Proxy-AAA Authentication Scheme Based on Fast Handover and Forwarding Mode for IP-based Internet of Things

ICST Transactions on Mobile Communications and Applications, 2017-09, Vol.3 (8), p.153338-10

2017

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Hashing-based lookup service in mobile ad-hoc networks with multi-hop stretchable clustering

International journal of sensor networks, 2014, Vol.15 (3), p.183

2014

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Design and performance analysis of a dynamic-paging AAA mobility management scheme for PMIPv6-based wireless networks

International journal of sensor networks, 2014, Vol.15 (4), p.214

2014

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Various evolution trends of sample thickness in fluorocarbon film deposition on SiO2

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2022-01, Vol.40 (1)

2022

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Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO[sub.2]

Sensors (Basel, Switzerland), 2022-08, Vol.22 (16)

2022

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Contribution of Ion Energy and Flux on High-Aspect Ratio SiO 2 Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C 4 F 8 Plasma: Individual Ion Energy and Flux Controlled

Materials, 2023-05, Vol.16 (10)

2023

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Contribution of Ion Energy and Flux on High-Aspect Ratio SiO[sub.2] Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C[sub.4]F[sub.8] Plasma: Individual Ion Energy and Flux Controlled

Materials, 2023-05, Vol.16 (10)

2023

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Initiation mechanism of arcing generated in RF capacitively coupled plasma

Physica scripta, 2024-05, Vol.99 (5), p.55603

2024

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Characterization of SiO[sub.2] Plasma Etching with Perfluorocarbon Precursors for the Greenhouse Gas Emissions Reduction

Materials, 2023-08, Vol.16 (16)

2023

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Plasma Treatment Mechanism in Si–SiO 2 Direct Wafer Bonding

Science of advanced materials, 2022-07, Vol.14 (7), p.1265-1270

2022

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Novel Optimization Methodology of Design Parameters in High-Speed Differential Via for PCIe Gen5 Channels Based on Particle Swarm Optimization Algorithm

IEEE transactions on components, packaging, and manufacturing technology (2011), 2023-10, Vol.13 (10), p.1545-1552

2023

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Characterization of SiO2 Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas

Analysis on crossing frequency in transmission microwave frequency spectrum of the cutoff probe

Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO2

Development of a Noninvasive Real-Time Ion Energy Distribution Monitoring System Applicable to Collisional Plasma Sheath

Contribution of Ion Energy and Flux on High-Aspect Ratio SiO2 Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C4F8 Plasma: Individual Ion Energy and Flux Controlled

Enhancement of Ar Ion Flux on the Substrate by Heterogeneous Charge Transfer Collision of Ar Atom with He Ion in an Inductively Coupled Ar/He Plasma

Determination of Plasma Potential Using an Emissive Probe with Floating Potential Method

A unified global model accompanied with a voltage and current sensor for low-pressure capacitively coupled RF discharge

Refined Appearance Potential Mass Spectrometry for High Precision Radical Density Quantification in Plasma

Characterization of SiO2 Plasma Etching with Perfluorocarbon (C4F8 and C6F6) and Hydrofluorocarbon (CHF3 and C4H2F6) Precursors for the Greenhouse Gas Emissions Reduction

Performance Analysis of Inter-Domain Handoff Scheme Based on Virtual Layer in PMIPv6 Networks for IP-Based Internet of Things

On the Quenching of Electron Temperature in Inductively Coupled Plasma

Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma

Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO2 Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing

Design and Performance Analysis of Sensor Proxy-AAA Authentication Scheme Based on Fast Handover and Forwarding Mode for IP-based Internet of Things

Hashing-based lookup service in mobile ad-hoc networks with multi-hop stretchable clustering

Design and performance analysis of a dynamic-paging AAA mobility management scheme for PMIPv6-based wireless networks

Various evolution trends of sample thickness in fluorocarbon film deposition on SiO2

Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO[sub.2]

Contribution of Ion Energy and Flux on High-Aspect Ratio SiO 2 Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C 4 F 8 Plasma: Individual Ion Energy and Flux Controlled

Contribution of Ion Energy and Flux on High-Aspect Ratio SiO[sub.2] Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C[sub.4]F[sub.8] Plasma: Individual Ion Energy and Flux Controlled

Initiation mechanism of arcing generated in RF capacitively coupled plasma

Characterization of SiO[sub.2] Plasma Etching with Perfluorocarbon Precursors for the Greenhouse Gas Emissions Reduction

Plasma Treatment Mechanism in Si–SiO 2 Direct Wafer Bonding

Novel Optimization Methodology of Design Parameters in High-Speed Differential Via for PCIe Gen5 Channels Based on Particle Swarm Optimization Algorithm

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