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A Review on Conduction Mechanisms in Dielectric Films

Advances in materials science and engineering, 2014-01, Vol.2014 (2014), p.1-18

2014

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Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films

Materials, 2014-11, Vol.7 (11), p.7339-7348

Chiu, Fu-Chien

2014

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Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

Nanoscale research letters, 2012-03, Vol.7 (1), p.178-178, Article 178

2012

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ESD and Latchup Optimization of an Embedded-Floating-pMOS SCR-Incorporated BJT

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3036-3043

2016

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Trap Exploration in Amorphous Boron-Doped ZnO Films

Materials, 2015-08, Vol.8 (9), p.5795-5805

2015

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Lossy Mode Resonance-Based Glucose Sensor with High-κ Dielectric Film

Crystals (Basel), 2019-09, Vol.9 (9), p.450

2019

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Thickness and Temperature Dependence of Dielectric Reliability Characteristics in Cerium Dioxide Thin Film

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2719-2725

CHIU, Fu-Chien

2010

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Optimization of Photobiomodulation Dose in Biological Tissue by Adjusting the Focal Point of Lens

Photonics, 2022-05, Vol.9 (5), p.350

2022

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Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

Advances in materials science and engineering, 2013-01, Vol.2013 (2013), p.1-5

2013

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Thin Film Applications in Advanced Electron Devices

Advances in materials science and engineering, 2014-01, Vol.2014, p.1-2

2014

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Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Advances in materials science and engineering, 2013-01, Vol.2013 (2013), p.1-5

2013

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Conduction mechanism of resistive switching films in MgO memory devices

Journal of applied physics, 2012-05, Vol.111 (9), p.094104-094104-5

2012

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A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability

Advances in materials science and engineering, 2015-01, Vol.2015 (2015), p.1-9

2015

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Effect of tantalum content on the structural properties and sensing performance of YbTaxOy electrolyte-insulator-semiconductor pH sensors

Journal of alloys and compounds, 2019-05, Vol.784, p.386-393

2019

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Efficient Recognition of Facial Expression with Lightweight Octave Convolutional Neural Network

The Journal of imaging science and technology, 2022-07, Vol.66 (4), p.40402-40402-9

2022

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A Substrate-and-Gate Triggering NMOS Device for High ESD Reliability in Deep Submicrometer Technology

Advances in materials science and engineering, 2013-01, Vol.2013 (2013), p.1-7

2013

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Trap characterization and conductance quantization in phosphorus-doped ZnO memory devices

Vacuum, 2017-06, Vol.140, p.42-46

2017

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Voltage stress induced interface states and hole trapping in germanium pMOSFETs with high-k gate dielectric and metal-gate electrode

Materials science in semiconductor processing, 2021-03, Vol.124, p.105612, Article 105612

2021

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Self-Assembled Curved Macroporous Photonic Crystal-Based Surfactant Detectors

ACS applied materials & interfaces, 2017-08, Vol.9 (31), p.26333-26340

2017

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The charge trapping effect of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Hf O 2 ) -silicon capacitors

Journal of applied physics, 2005-08, Vol.98 (4), p.044103-044103-6

2005

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Electrical conduction mechanisms of metal∕La2O3∕Si structure

Journal of applied physics, 2005-05, Vol.97 (10)

2005

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Charge-Trapping Devices Using Multilayered Dielectrics for Nonvolatile Memory Applications

Advances in materials science and engineering, 2013-01, Vol.2013 (2013), p.1-5

2013

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Leakage currents in amorphous Ta2O5 thin films

Journal of applied physics, 1997-05, Vol.81 (10), p.6911-6915

1997

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Structural and electrical properties of thin Ho2O3 gate dielectrics

Thin solid films, 2010-11, Vol.519 (2), p.923-927

2010

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Polarity of Bipolar Resistive Switching Characteristics in ZnO Memory Films

Journal of the Electrochemical Society, 2011, Vol.158 (9), p.H872

2011

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A Review on Conduction Mechanisms in Dielectric Films

Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films

Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

ESD and Latchup Optimization of an Embedded-Floating-pMOS SCR-Incorporated BJT

Trap Exploration in Amorphous Boron-Doped ZnO Films

Lossy Mode Resonance-Based Glucose Sensor with High-κ Dielectric Film

Thickness and Temperature Dependence of Dielectric Reliability Characteristics in Cerium Dioxide Thin Film

Optimization of Photobiomodulation Dose in Biological Tissue by Adjusting the Focal Point of Lens

Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

Thin Film Applications in Advanced Electron Devices

Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Conduction mechanism of resistive switching films in MgO memory devices

A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability

Effect of tantalum content on the structural properties and sensing performance of YbTaxOy electrolyte-insulator-semiconductor pH sensors

Efficient Recognition of Facial Expression with Lightweight Octave Convolutional Neural Network

A Substrate-and-Gate Triggering NMOS Device for High ESD Reliability in Deep Submicrometer Technology

Trap characterization and conductance quantization in phosphorus-doped ZnO memory devices

Voltage stress induced interface states and hole trapping in germanium pMOSFETs with high-k gate dielectric and metal-gate electrode

Self-Assembled Curved Macroporous Photonic Crystal-Based Surfactant Detectors

The charge trapping effect of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Hf O 2 ) -silicon capacitors

Electrical conduction mechanisms of metal∕La2O3∕Si structure

Charge-Trapping Devices Using Multilayered Dielectrics for Nonvolatile Memory Applications

Leakage currents in amorphous Ta2O5 thin films

Structural and electrical properties of thin Ho2O3 gate dielectrics

Polarity of Bipolar Resistive Switching Characteristics in ZnO Memory Films

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