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The substrate-induced effect of GaN MSM photodetectors on silicon substrate

Semiconductor science and technology, 2008-12, Vol.23 (12), p.125007

Chiou, Y Z

2008

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On the effect of quantum barrier thickness in the active region of nitride-based light emitting diodes

Solid-state electronics, 2014-09, Vol.99, p.11-15

2014

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The effect of the intrinsic layer on the reliability of nitride-based p–i–n photodetectors

Semiconductor science and technology, 2009-05, Vol.24 (5), p.055004-055004 (5), Article 055004

Chiou, Y Z

2009

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GaN MSM UV photodetectors with titanium tungsten transparent electrodes

IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.38-42

2006

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Photoluminescence of self-assembled Ag( i ) and Au( i ) N-heterocyclic carbene complexes. Interplay the aurophilic, hydrogen bonding and hydrophobic interactions

RSC advances, 2017, Vol.7 (24), p.14611-14617

2017

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Surface HCl treatment in ZnO photoconductive sensors

Thin solid films, 2009-07, Vol.517 (17), p.5050-5053

2009

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Growth of quaternary AlInGaN with various TMI molar rates

Journal of crystal growth, 2010-06, Vol.312 (12), p.1920-1924

2010

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Pathways of ethanol steam reforming over ceria-supported catalysts

International journal of hydrogen energy, 2012-09, Vol.37 (18), p.13667-13673

2012

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Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence

International Journal of Photoenergy, 2015-01, Vol.2015 (2015), p.44-49-005

2015

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High-Speed InGaAs P-I-N Photodetector With Planar Buried Heterostructure

IEEE transactions on electron devices, 2009-06, Vol.56 (6), p.1347-1350

2009

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Catalytic performance of Pt-promoted cobalt-based catalysts for the steam reforming of ethanol

International journal of hydrogen energy, 2014-04, Vol.39 (11), p.5653-5662

2014

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The reliability analysis of GaN-based light-emitting diodes with different current-blocking layers

Semiconductor science and technology, 2011-08, Vol.26 (8), p.085005

2011

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Investigating the Efficiency Droop of Nitride-Based Blue LEDs with Different Quantum Barrier Growth Rates

Crystals (Basel), 2019-12, Vol.9 (12), p.677

2019

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MgZnO/SiO2/ZnO metal-semiconductor-metal dual-band UVA and UVB photodetector with different MgZnO thicknesses by RF magnetron sputter

Japanese Journal of Applied Physics, 2020-03, Vol.59 (SD), p.1

2020

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Ethanol Steam Reforming to Produce Hydrogen Over Co/ZnO and PtCo/ZnO Catalysts

Catalysis letters, 2013-05, Vol.143 (5), p.501-507

2013

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High detectivity GaN metal–semiconductor–metal UV photodetectors with transparent tungsten electrodes

Semiconductor science and technology, 2005-06, Vol.20 (6), p.485-489

2005

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AlGaN Photodetectors Prepared on Si Substrates

IEEE electron device letters, 2007-04, Vol.28 (4), p.264-266

2007

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ZnO epitaxial layers grown on nitridated Si(1 0 0) substrate with HT-GaN/LT-ZnO double buffer

Journal of crystal growth, 2008-01, Vol.310 (2), p.290-294

2008

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Reforming of Ethanol to Produce Hydrogen over PtRuMg/ZrO 2 Catalyst

Journal of nanotechnology, 2012, Vol.2012, p.1-6

2012

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Enhancement in Output Power of Blue Nitride-Based Light-Emitting Diodes With an Electron Retarded Layer

Journal of display technology, 2015-12, Vol.11 (12), p.1005-1009

2015

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MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode

Thin solid films, 2009-07, Vol.517 (17), p.5054-5056

2009

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Effect of Co, Fe and Rh addition on coke deposition over Ni/Ce0.5Zr0.5O2 catalysts for steam reforming of ethanol

International journal of hydrogen energy, 2014-12, Vol.39 (35), p.20689-20699

2014

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Crabwise ZnO Nanowire UV Photodetector Prepared on ZnO : Ga/Glass Template

IEEE transactions on nanotechnology, 2007-11, Vol.6 (6), p.595-600

2007

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GaN-based p-i-n sensors with ITO contacts

IEEE sensors journal, 2006-04, Vol.6 (2), p.406-411

2006

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Room temperature photo-CVD SiO2 layers on AlGaN and AlGaN/GaN MOS-HFETs

Physica status solidi. A, Applications and materials science, 2006-02, Vol.203 (2), p.404-409

2006

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The substrate-induced effect of GaN MSM photodetectors on silicon substrate

On the effect of quantum barrier thickness in the active region of nitride-based light emitting diodes

The effect of the intrinsic layer on the reliability of nitride-based p–i–n photodetectors

GaN MSM UV photodetectors with titanium tungsten transparent electrodes

Photoluminescence of self-assembled Ag( i ) and Au( i ) N-heterocyclic carbene complexes. Interplay the aurophilic, hydrogen bonding and hydrophobic interactions

Surface HCl treatment in ZnO photoconductive sensors

Growth of quaternary AlInGaN with various TMI molar rates

Pathways of ethanol steam reforming over ceria-supported catalysts

Investigating the Effect of Piezoelectric Polarization on GaN-Based LEDs with Different Prestrain Layer by Temperature-Dependent Electroluminescence

High-Speed InGaAs P-I-N Photodetector With Planar Buried Heterostructure

Catalytic performance of Pt-promoted cobalt-based catalysts for the steam reforming of ethanol

The reliability analysis of GaN-based light-emitting diodes with different current-blocking layers

Investigating the Efficiency Droop of Nitride-Based Blue LEDs with Different Quantum Barrier Growth Rates

MgZnO/SiO2/ZnO metal-semiconductor-metal dual-band UVA and UVB photodetector with different MgZnO thicknesses by RF magnetron sputter

Ethanol Steam Reforming to Produce Hydrogen Over Co/ZnO and PtCo/ZnO Catalysts

High detectivity GaN metal–semiconductor–metal UV photodetectors with transparent tungsten electrodes

AlGaN Photodetectors Prepared on Si Substrates

ZnO epitaxial layers grown on nitridated Si(1 0 0) substrate with HT-GaN/LT-ZnO double buffer

Reforming of Ethanol to Produce Hydrogen over PtRuMg/ZrO 2 Catalyst

Enhancement in Output Power of Blue Nitride-Based Light-Emitting Diodes With an Electron Retarded Layer

MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode

Effect of Co, Fe and Rh addition on coke deposition over Ni/Ce0.5Zr0.5O2 catalysts for steam reforming of ethanol

Crabwise ZnO Nanowire UV Photodetector Prepared on ZnO : Ga/Glass Template

GaN-based p-i-n sensors with ITO contacts

Room temperature photo-CVD SiO2 layers on AlGaN and AlGaN/GaN MOS-HFETs

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