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GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3166-3175

2013

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IEEE_Xplore

AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3119-3131

2013

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IEEE_Xplore

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.4070-4077

2014

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IEEE_Xplore

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Applied physics letters, 2012-01, Vol.100 (3), p.033505-033505-3

2012

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Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications

Micromachines (Basel), 2022-12, Vol.13 (12), p.2244

2022

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N-polar GaN∕AlGaN∕GaN high electron mobility transistors

Journal of applied physics, 2007-08, Vol.102 (4)

2007

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Deep Levels Characterization in GaN HEMTs-Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3176-3182

2013

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IEEE_Xplore

N-polar GaN epitaxy and high electron mobility transistors

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74009

2013

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On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs

Micromachines (Basel), 2021-06, Vol.12 (6), p.709

2021

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Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs During Pulse-Mode Operation

IEEE journal of the Electron Devices Society, 2017-11, Vol.5 (6), p.491-495

2017

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Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface

Applied physics letters, 2013-04, Vol.102 (16)

2013

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Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies

e-Prime, 2023-12, Vol.6, p.100338, Article 100338

2023

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Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1385-1392

2012

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IEEE_Xplore

Reliability issues of Gallium Nitride High Electron Mobility Transistors

International journal of microwave and wireless technologies, 2010-02, Vol.2 (1), p.39-50

2010

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Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation

Materials science in semiconductor processing, 2018-05, Vol.78, p.127-131

2018

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The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs

Journal of electronic materials, 2013-01, Vol.42 (1), p.15-20

2013

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Experimental and numerical analysis of VTH and RON drifts in E-mode GaN HEMTs during switch-mode operation

Materials science in semiconductor processing, 2019-08, Vol.98, p.77-80

2019

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Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4862-4868

2021

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“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.697-703

2021

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Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3473-3478

2016

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IEEE_Xplore

Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3325-3332

2021

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IEEE_Xplore

Reliability Investigation of GaN HEMTs for MMICs Applications

Micromachines (Basel), 2014-09, Vol.5 (3), p.570-582

2014

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Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs

IEEE electron device letters, 2024-05, Vol.45 (5), p.801-804

2024

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Hole Virtual Gate Model Explaining Surface-Related Dynamic R ON in p-GaN Power HEMTs

IEEE electron device letters, 2024-05, Vol.45 (5), p.801-804

2024

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GaN-based power devices: Physics, reliability, and perspectives

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications

N-polar GaN∕AlGaN∕GaN high electron mobility transistors

Deep Levels Characterization in GaN HEMTs-Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

N-polar GaN epitaxy and high electron mobility transistors

On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs

Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs During Pulse-Mode Operation

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface

Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies

Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation

Reliability issues of Gallium Nitride High Electron Mobility Transistors

Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation

The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs

Experimental and numerical analysis of VTH and RON drifts in E-mode GaN HEMTs during switch-mode operation

Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs

“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers

Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs

Reliability Investigation of GaN HEMTs for MMICs Applications

Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs

Hole Virtual Gate Model Explaining Surface-Related Dynamic R ON in p-GaN Power HEMTs

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