UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.654-662

2006

Volltextzugriff (PDF)

Highly conductive and transparent aluminum-doped zinc oxide thin films deposited on polyethylene terephthalate substrates by pulsed laser deposition

Thin solid films, 2013-10, Vol.545, p.285-290

2013

Volltextzugriff (PDF)

Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions

Surface science, 2012-11, Vol.606 (21-22), p.1638-1642

2012

Volltextzugriff (PDF)

Synthesis of germanium nanodots on silicon using an anodic alumina membrane mask

Journal of crystal growth, 2004-08, Vol.268 (3), p.560-563

2004

Volltextzugriff (PDF)

High-thermal-stability (HfO 2) 1− x (Al 2O 3) x film fabricated by dual-beam laser ablation

Thin solid films, 2006-05, Vol.504 (1), p.45-49

2006

Volltextzugriff (PDF)

Analysis of the DCIV peaks in electrically stressed pMOSFETs

IEEE transactions on electron devices, 2001-05, Vol.48 (5), p.913-920

2001

Volltextzugriff (PDF)

Accurate modeling of the effects of fringing area interface traps on scanning capacitance microscopy measurement

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.499-506

2006

Volltextzugriff (PDF)

Growth of Cu2O on Ga-doped ZnO and their interface energy alignment for thin film solar cells

Journal of applied physics, 2010-08, Vol.108 (3)

2010

Volltextzugriff (PDF)

Monitoring oxide quality using the spread of the dC/dV peak in scanning capacitance microscopy measurements

IEEE electron device letters, 2003-10, Vol.24 (10), p.667-670

2003

Volltextzugriff (PDF)

Examining the transparency of gallium-doped zinc oxide for photovoltaic applications

Solar energy materials and solar cells, 2011-08, Vol.95 (8), p.2400-2406

2011

Volltextzugriff (PDF)

Investigation of interface traps in LDD pMOST's by the DCIV method

IEEE electron device letters, 1997-12, Vol.18 (12), p.583-585

1997

Volltextzugriff (PDF)

Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate

Thin solid films, 2013-05, Vol.534, p.177-182

2013

Volltextzugriff (PDF)

Comparative study of aluminium-doped zinc oxide and ruthenium–aluminium co-doped zinc oxide by magnetron co-sputtering

Thin solid films, 2010-10, Vol.518 (24), p.e93-e97

2010

Volltextzugriff (PDF)

Low-frequency noise characterization of latent damage in thin oxides subjected to high-field impulse stressing

IEEE electron device letters, 1998-10, Vol.19 (10), p.363-366

1998

Volltextzugriff (PDF)

Formation of germanium nanocrystals in thick silicon oxide matrix on silicon substrate under rapid thermal annealing

Journal of crystal growth, 2006-02, Vol.288 (1), p.79-83

2006

Volltextzugriff (PDF)

Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric

Thin solid films, 2004-09, Vol.462 (Complete), p.46-50

2004

Volltextzugriff (PDF)

Influence of interface traps and surface mobility degradation on scanning capacitance microscopy measurement

IEEE transactions on electron devices, 2004-09, Vol.51 (9), p.1496-1503

2004

Volltextzugriff (PDF)

Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure

Microelectronic engineering, 2003-04, Vol.66 (1-4), p.218-223

2003

Volltextzugriff (PDF)

Nano-modification on hydrogen-passivated Si surfaces by a laser-assisted scanning tunneling microscope operating in air

Applied surface science, 2000-02, Vol.154, p.360-364

2000

Volltextzugriff (PDF)

Structural characterisation of polycrystalline SiGe thin film

Solid-state electronics, 2001-11, Vol.45 (11), p.1963-1966

2001

Volltextzugriff (PDF)

Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO 2/pure Ge/rapid thermal oxide memory structure

Microelectronic engineering, 2003, Vol.66 (1), p.218-223

2003

Volltextzugriff (PDF)

Electrical characterization of a trilayer germanium nanocrystal memory device

Microelectronic engineering, 2003-04, Vol.66 (1), p.33-38

2003

Volltextzugriff (PDF)

Confinement of Nanocrystals and Possible Charge Storage Mechanism for MIS Memory Devices with Ge Nanocrystals Embedded in SiO 2

MRS proceedings, 2004, Vol.818, Article M11.29.1

2004

Volltextzugriff (PDF)

Scanning tunnelling microscopy imaging and modification of hydrogen-passivated Ge(100) surfaces

Applied physics. A, Materials science & processing, 2000-04, Vol.70 (4), p.403-406

2000

Volltextzugriff (PDF)

Germanium nanostructures for electronic memory application

2008 IEEE International Conference on Semiconductor Electronics, 2008, p.A7-A11

Chim, W.K.

2008

Volltextzugriff (PDF)

1 – 25 von 103

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(64)
Mit Volltextzugriff
(98)

Publikationsform

Artikel
(66)
Tagungsberichte
(37)

Sprache

Englisch
(103)

Erscheinungsjahr

n.n

Thema

Science & Technology
(82)
Technology
(54)
Engineering
(40)
Engineering, Electrical & Electronic
(40)
Physical Sciences
(38)
Physics
(37)
Physics, Applied
(30)
Humans
(28)
Life Sciences & Biomedicine
(23)
Failure Analysis
(22)
Degradation
(19)
Exact Sciences And Technology
(18)
Female
(18)
Hot Carriers
(18)
Materials Science
(17)
Physics, Condensed Matter
(17)
Stress
(15)
Materials Science, Multidisciplinary
(14)
Integrated Circuit Reliability
(13)
Voltage
(13)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

Highly conductive and transparent aluminum-doped zinc oxide thin films deposited on polyethylene terephthalate substrates by pulsed laser deposition

Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions

Synthesis of germanium nanodots on silicon using an anodic alumina membrane mask

High-thermal-stability (HfO 2) 1− x (Al 2O 3) x film fabricated by dual-beam laser ablation

Analysis of the DCIV peaks in electrically stressed pMOSFETs

Accurate modeling of the effects of fringing area interface traps on scanning capacitance microscopy measurement

Growth of Cu2O on Ga-doped ZnO and their interface energy alignment for thin film solar cells

Monitoring oxide quality using the spread of the dC/dV peak in scanning capacitance microscopy measurements

Examining the transparency of gallium-doped zinc oxide for photovoltaic applications

Investigation of interface traps in LDD pMOST's by the DCIV method

Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate

Comparative study of aluminium-doped zinc oxide and ruthenium–aluminium co-doped zinc oxide by magnetron co-sputtering

Low-frequency noise characterization of latent damage in thin oxides subjected to high-field impulse stressing

Formation of germanium nanocrystals in thick silicon oxide matrix on silicon substrate under rapid thermal annealing

Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric

Influence of interface traps and surface mobility degradation on scanning capacitance microscopy measurement

Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure

Nano-modification on hydrogen-passivated Si surfaces by a laser-assisted scanning tunneling microscope operating in air

Structural characterisation of polycrystalline SiGe thin film

Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO 2/pure Ge/rapid thermal oxide memory structure

Electrical characterization of a trilayer germanium nanocrystal memory device

Confinement of Nanocrystals and Possible Charge Storage Mechanism for MIS Memory Devices with Ge Nanocrystals Embedded in SiO 2

Scanning tunnelling microscopy imaging and modification of hydrogen-passivated Ge(100) surfaces

Germanium nanostructures for electronic memory application

Suchergebnisse filtern