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Increased ductility of Ni-based metallic glass ribbon pre-annealed at β-relaxation temperature

Journal of materials science, 2023-08, Vol.58 (32), p.13223-13235

2023

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Influence of the Rate of Directional Crystallization and Silicon Content on the Structure and Strength of the Al–Si–Cu Alloy

Technical physics, 2023-12, Vol.68 (12), p.675-682

2023

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Simulation of Operation of an Actuator Based on a Flexural Force Element Made of Material with Shape Memory Effect

Technical physics, 2019-04, Vol.64 (4), p.506-511

2019

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Growth of β-Ga2O3 Single Crystals by the Solution–Melt Method

Technical physics letters, 2023-12, Vol.49 (Suppl 1), p.S38-S40

2023

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Tribological Studies of α-β-Ga2O3 Layers Paired with a Sapphire Counterface

Technical physics, 2021, Vol.66 (11), p.1186-1193

2021

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Growth of Thick ε(κ)-Ga2O3 Films by Halide Vapor Phase Epitaxy

Technical physics letters, 2023-12, Vol.49 (Suppl 2), p.S142-S145

2023

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Simulation of Operating a Cyclic Actuator Based on a Circular Force Element Made of Shape Memory Material

Technical physics, 2019-12, Vol.64 (12), p.1785-1789

2019

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HVPE growth of α- and ε-Ga2O3 on patterned sapphire substrates

Journal of physics. Conference series, 2019, Vol.1400 (5)

2019

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High Sensitivity of Halide Vapor Phase Epitaxy Grown Indium Oxide Films to Ammonia

Semiconductors (Woodbury, N.Y.), 2023-12, Vol.57 (13), p.579-586

2023

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Gas-Sensing Properties of In2O3–Ga2O3 Alloy Films

Technical physics letters, 2023-12, Vol.49 (Suppl 3), p.S222-S226

2023

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Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition

Technical physics letters, 2023-12, Vol.49 (Suppl 3), p.S284-S287

2023

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Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy

Semiconductors (Woodbury, N.Y.), 2019-06, Vol.53 (6), p.780-783

2019

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Mechanical Properties of Epilayers of Metastable α- and ε-Ga2O3 Phases Studied by Nanoindentation

Technical physics letters, 2021-10, Vol.47 (10), p.709-713

2021

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Microhardness and Crack Resistance of Gallium Oxide

Technical physics letters, 2019-11, Vol.45 (11), p.1114-1117

2019

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Surface modification/alloying using intense pulsed electron beam as a tool for improving the corrosion resistance of steels exposed to heavy liquid metals

Journal of nuclear materials, 2011-08, Vol.415 (3), p.270-275

2011

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LIQUID ANODE METHOD AS A METHOD FOR THE FORMATION OF SPHERICAL METAL PARTICLES

High temperature material processes, 2023, Vol.27 (3), p.89-94

2023

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Record Thick κ(ε)-Ga2O3Epitaxial Layers Grown on GaN/c-Sapphire

Technical physics, 2023, Vol.68 (12), p.689-694

2023

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Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate

Technical physics letters, 2020-03, Vol.46 (3), p.228-230

2020

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Strain Concentration Effect in Cu–Al–Ni Single Crystals under a Longitudinal Bending Force

Technical physics letters, 2018-11, Vol.44 (11), p.992-994

2018

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Interfacial Stresses and the Anomalous Character of Thermoelastic-Deformation Curves of a Cu–Al–Ni Shape-Memory Alloy

Technical physics letters, 2017-12, Vol.43 (12), p.1109-1111

2017

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Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates

APL materials, 2022-06, Vol.10 (6), p.061102-061102-8

2022

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States and Properties of Metallic Systems at a Threshold Breakdown of the Through Holes Under Power Laser Action. Threshold Breakdown of Through Holes in Metal Foils by Powerful Laser Radiation (Part 1)

MATEC Web of Conferences, 2016, Vol.61, p.1015

2016

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High-quality Cr2O3 - Ga2O3 solid solutions films grown by mist-CVD epitaxy

Journal of alloys and compounds, 2024-08, Vol.994, p.174687, Article 174687

2024

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Increased ductility of Ni-based metallic glass ribbon pre-annealed at [beta]-relaxation temperature

Journal of materials science, 2023-08, Vol.58 (32), p.13223

2023

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Impact on the subsurface layers of the single-crystal β-Ga2O3 wafers induced by a mechanical wear

Materials science in semiconductor processing, 2022-06, Vol.143, p.106520, Article 106520

2022

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Increased ductility of Ni-based metallic glass ribbon pre-annealed at β-relaxation temperature

Influence of the Rate of Directional Crystallization and Silicon Content on the Structure and Strength of the Al–Si–Cu Alloy

Simulation of Operation of an Actuator Based on a Flexural Force Element Made of Material with Shape Memory Effect

Growth of β-Ga2O3 Single Crystals by the Solution–Melt Method

Tribological Studies of α-β-Ga2O3 Layers Paired with a Sapphire Counterface

Growth of Thick ε(κ)-Ga2O3 Films by Halide Vapor Phase Epitaxy

Simulation of Operating a Cyclic Actuator Based on a Circular Force Element Made of Shape Memory Material

HVPE growth of α- and ε-Ga2O3 on patterned sapphire substrates

High Sensitivity of Halide Vapor Phase Epitaxy Grown Indium Oxide Films to Ammonia

Gas-Sensing Properties of In2O3–Ga2O3 Alloy Films

Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition

Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy

Mechanical Properties of Epilayers of Metastable α- and ε-Ga2O3 Phases Studied by Nanoindentation

Microhardness and Crack Resistance of Gallium Oxide

Surface modification/alloying using intense pulsed electron beam as a tool for improving the corrosion resistance of steels exposed to heavy liquid metals

LIQUID ANODE METHOD AS A METHOD FOR THE FORMATION OF SPHERICAL METAL PARTICLES

Record Thick κ(ε)-Ga2O3Epitaxial Layers Grown on GaN/c-Sapphire

Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate

Strain Concentration Effect in Cu–Al–Ni Single Crystals under a Longitudinal Bending Force

Interfacial Stresses and the Anomalous Character of Thermoelastic-Deformation Curves of a Cu–Al–Ni Shape-Memory Alloy

Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates

States and Properties of Metallic Systems at a Threshold Breakdown of the Through Holes Under Power Laser Action. Threshold Breakdown of Through Holes in Metal Foils by Powerful Laser Radiation (Part 1)

High-quality Cr2O3 - Ga2O3 solid solutions films grown by mist-CVD epitaxy

Increased ductility of Ni-based metallic glass ribbon pre-annealed at [beta]-relaxation temperature

Impact on the subsurface layers of the single-crystal β-Ga2O3 wafers induced by a mechanical wear

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