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A finite element method to simulate dislocation stress: A general numerical solution for inclusion problems

AIP advances, 2020-01, Vol.10 (1), p.015111-015111-6

2020

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Charge carrier induced lattice strain and stress effects on As activation in Si

Applied physics letters, 2008-07, Vol.93 (2)

2008

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Multiscale strain simulation for semiconductor devices base on the valence force field and the finite element methods

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.12-15

2015

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Atomistic simulation flow for source-drain epitaxy and contact formation processes of advanced logic devices

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.101-104

2016

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Donor deactivation at high doping limit: Donor pair and impurity band model

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.37-40

2013

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An effective grain growth model using a combination of Voronoi tessellation and Monte Carlo method

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.89-92

2023

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Change of electrical characteristics of a p-type MOSFET via hydrogen effect on boron redistribution

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.181-184

2023

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Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon

Physical review. B, Condensed matter and materials physics, 2009-02, Vol.79 (7), Article 073201

2009

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Charge carrier induced lattice strain and stress effects on Asactivation in Si

Applied physics letters, 2008-07, Vol.93 (2), p.022112-022112-3

2008

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Calculations of codoping effects between combinations of donors ( P / As / Sb ) and acceptors ( B / Ga / In ) in Si

Journal of applied physics, 2007-12, Vol.102 (12), p.123709-123709-5

2007

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Atomistic modeling of dopant diffusion and segregation in strained SiGeC

2008 International Conference on Simulation of Semiconductor Processes and Devices, 2008, p.333-336

2008

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Gettering of transition metals by porous silicon in epitaxial silicon solar cells

Physica status solidi. A, Applications and materials science, 2012-10, Vol.209 (10), p.1866-1871

2012

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Atomistic Modeling of {311} Defects and Dislocation Ribbons

MRS proceedings, 2008, Vol.1070, Article 1070-E06-04

2008

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First principles calculations of dopant solubility based on strain compensation and direct binding between dopants and group IV impurities

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.700-704

2006

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Enhancement of gettering in epitaxial thin-film silicon solar cells by tuning the properties of porous silicon

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.0058-0062

2013

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Overlayer stress effects on defect formation in Si and Ge

Thin solid films, 2010-02, Vol.518 (9), p.2442-2447

2010

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Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers

Solid state phenomena, 2009-10, Vol.156-158, p.173-180

2009

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Stress Effects on As Activation in Si

MRS proceedings, 2007, Vol.994, Article 0994-F03-17

2007

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Predictive Model for B Diffusion in Strained SiGe Based on Atomistic Calculations

MRS proceedings, 2006, Vol.913, Article 0913-D05-07

2006

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Calculation of dopant segregation ratios at semiconductor interfaces

Physical review. B, Condensed matter and materials physics, 2008-11, Vol.78 (19), Article 195303

2008

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Atomic scale modeling of stress and pairing effects on dopant behavior in silicon

Ahn, Chihak

2007

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Atomic scale modeling of stress and pairing effects on dopant behavior in silicon

Ahn, Chihak

2007

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Modeling of Effect of Stress on C Diffusion/Clustering in Si

MRS proceedings, 2008, Vol.1070, Article 1070-E03-07

2008

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Predictive models for co-doping effects between combinations of donors (P/As/Sb) and acceptors (B/Ga/In)

2006 International Conference on Simulation of Semiconductor Processes and Devices, 2006, p.83-86

2006

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Modeling of Defect Evolution and TED under Stress based on DFT Calculations

2006 International Conference on Simulation of Semiconductor Processes and Devices, 2006, p.71-74

2006

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A finite element method to simulate dislocation stress: A general numerical solution for inclusion problems

Charge carrier induced lattice strain and stress effects on As activation in Si

Multiscale strain simulation for semiconductor devices base on the valence force field and the finite element methods

Atomistic simulation flow for source-drain epitaxy and contact formation processes of advanced logic devices

Donor deactivation at high doping limit: Donor pair and impurity band model

An effective grain growth model using a combination of Voronoi tessellation and Monte Carlo method

Change of electrical characteristics of a p-type MOSFET via hydrogen effect on boron redistribution

Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon

Charge carrier induced lattice strain and stress effects on Asactivation in Si

Calculations of codoping effects between combinations of donors ( P / As / Sb ) and acceptors ( B / Ga / In ) in Si

Atomistic modeling of dopant diffusion and segregation in strained SiGeC

Gettering of transition metals by porous silicon in epitaxial silicon solar cells

Atomistic Modeling of {311} Defects and Dislocation Ribbons

First principles calculations of dopant solubility based on strain compensation and direct binding between dopants and group IV impurities

Enhancement of gettering in epitaxial thin-film silicon solar cells by tuning the properties of porous silicon

Overlayer stress effects on defect formation in Si and Ge

Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers

Stress Effects on As Activation in Si

Predictive Model for B Diffusion in Strained SiGe Based on Atomistic Calculations

Calculation of dopant segregation ratios at semiconductor interfaces

Atomic scale modeling of stress and pairing effects on dopant behavior in silicon

Atomic scale modeling of stress and pairing effects on dopant behavior in silicon

Modeling of Effect of Stress on C Diffusion/Clustering in Si

Predictive models for co-doping effects between combinations of donors (P/As/Sb) and acceptors (B/Ga/In)

Modeling of Defect Evolution and TED under Stress based on DFT Calculations

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