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Compact Physical Models for AlGaN/GaN MIS-FinFET on Threshold Voltage and Saturation Current

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1348-1354

2018

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IEEE_Xplore

Physical mechanism on the suppression of dynamic resistance degradation by multi-mesa-channel in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2019-12, Vol.115 (26)

2019

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Fin-shaped AlGaN/GaN high electron mobility magnetoresistive sensor device

Applied physics letters, 2021-04, Vol.118 (16)

2021

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Toward Understanding Thickness Dependence on Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.2175-2178

2023

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IEEE_Xplore

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2164-2173

2014

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IEEE_Xplore

Algorithmic composition for pop songs based on lyrics emotion retrieval

Multimedia tools and applications, 2022-04, Vol.81 (9), p.12421-12440

2022

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SiC Lateral Devices on Semi-insulating Substrate

电力电子技术, 2017, Vol.51 (8), p.17-19

Chih-Fang Huang

2017

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Demonstration of CMOS Integration With High-Voltage Double-Implanted MOS in 4H-SiC

IEEE electron device letters, 2021-01, Vol.42 (1), p.78-81

2021

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IEEE_Xplore

Association between Helicobacter pylori eradication and the risk of coronary heart diseases

PloS one, 2018-01, Vol.13 (1), p.e0190219

2018

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A Comprehensive Analytical Study of Dielectric Modulated Drift Regions-Part I: Static Characteristics

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2255-2260

2016

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IEEE_Xplore

6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

IEEE electron device letters, 2015-04, Vol.36 (4), p.381-383

2015

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IEEE_Xplore

A Comprehensive Analytical Study on Dielectric Modulated Drift Regions-Part II: Switching Performances

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2261-2267

2016

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IEEE_Xplore

Synthesis of graphene on silicon carbide substrates at low temperature

Carbon (New York), 2009-07, Vol.47 (8), p.2026-2031

2009

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Factors associated with nonadherence to antihypertensive medication among middle-aged adults with hypertension: findings from the Taiwan National Health Interview Survey

Journal of international medical research, 2020-08, Vol.48 (8), p.?

2020

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3.3 kV Class 4 H-SiC Double-Implanted MOSFET With Excellent Radiation Hardness Against Gamma Rays Using Counter-Doped Junction Termination Extension

IEEE electron device letters, 2021-05, Vol.42 (5), p.727-730

2021

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IEEE_Xplore

Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated With Indium-Tin-Oxide Electrodes

IEEE electron device letters, 2021-02, Vol.42 (2), p.144-147

2021

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IEEE_Xplore

Effect of acupressure on constipation in patients with advanced cancer

Supportive care in cancer, 2019-09, Vol.27 (9), p.3473-3478

2019

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Ultralow Capacitance Transient Voltage Suppressor Design

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3064-3068

2016

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IEEE_Xplore

Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

Micromachines (Basel), 2021-06, Vol.12 (7), p.756

2021

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Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.339-345

2015

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IEEE_Xplore

Photoelectrochemical etching to fabricate single-crystal SiC MEMS for harsh environments

Materials letters, 2011-02, Vol.65 (3), p.409-412

2011

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Numerical Study of 4H-SiC UMOSFETs with Split-Gate and P+ Shielding

Energies (Basel), 2020-03, Vol.13 (5), p.1122

2020

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Association between Serum Total and Specific Immunoglobulin E Levels and Body Height: A Cross-Sectional Study of Children and Adolescents

Children (Basel), 2022-05, Vol.9 (5), p.661

2022

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Theoretical Analysis of Dielectric Modulated Drift Region for Si Power Devices

IEEE electron device letters, 2015-04, Vol.36 (4), p.378-380

2015

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IEEE_Xplore

Relationship between Helicobacter pylori infection and bone mineral density: a retrospective cross-sectional study

BMC gastroenterology, 2018-04, Vol.18 (1), p.54-54, Article 54

2018

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Compact Physical Models for AlGaN/GaN MIS-FinFET on Threshold Voltage and Saturation Current

Physical mechanism on the suppression of dynamic resistance degradation by multi-mesa-channel in AlGaN/GaN high electron mobility transistors

Fin-shaped AlGaN/GaN high electron mobility magnetoresistive sensor device

Toward Understanding Thickness Dependence on Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Algorithmic composition for pop songs based on lyrics emotion retrieval

SiC Lateral Devices on Semi-insulating Substrate

Demonstration of CMOS Integration With High-Voltage Double-Implanted MOS in 4H-SiC

Association between Helicobacter pylori eradication and the risk of coronary heart diseases

A Comprehensive Analytical Study of Dielectric Modulated Drift Regions-Part I: Static Characteristics

6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

A Comprehensive Analytical Study on Dielectric Modulated Drift Regions-Part II: Switching Performances

Synthesis of graphene on silicon carbide substrates at low temperature

Factors associated with nonadherence to antihypertensive medication among middle-aged adults with hypertension: findings from the Taiwan National Health Interview Survey

3.3 kV Class 4 H-SiC Double-Implanted MOSFET With Excellent Radiation Hardness Against Gamma Rays Using Counter-Doped Junction Termination Extension

Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated With Indium-Tin-Oxide Electrodes

Effect of acupressure on constipation in patients with advanced cancer

Ultralow Capacitance Transient Voltage Suppressor Design

Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

Photoelectrochemical etching to fabricate single-crystal SiC MEMS for harsh environments

Numerical Study of 4H-SiC UMOSFETs with Split-Gate and P+ Shielding

Association between Serum Total and Specific Immunoglobulin E Levels and Body Height: A Cross-Sectional Study of Children and Adolescents

Theoretical Analysis of Dielectric Modulated Drift Region for Si Power Devices

Relationship between Helicobacter pylori infection and bone mineral density: a retrospective cross-sectional study

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