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Localized Surface Plasmon Resonance-Based Colorimetric Assay Featuring Thiol-Capped Au Nanoparticles Combined with a Mobile Application for On-Site Parathion Organophosphate Pesticide Detection

Langmuir, 2022-01, Vol.38 (2), p.838-848

2022

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Uptake of TiO2 Nanoparticles into C. elegans Neurons Negatively Affects Axonal Growth and Worm Locomotion Behavior

ACS applied materials & interfaces, 2018-03, Vol.10 (10), p.8485-8495

2018

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Liquid-phase-deposited high dielectric zirconium oxide for metal-oxide-semiconductor high electron mobility transistors

Vacuum, 2015-08, Vol.118, p.142-146

2015

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Fabrication of highly transparent CsPbBr3 quantum-dot thin film via bath coating for light emission applications

Ceramics international, 2022-06, Vol.48 (11), p.15729-15736

2022

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Toxic Effects of Size-tunable Gold Nanoparticles on Caenorhabditis elegans Development and Gene Regulation

Scientific reports, 2018-10, Vol.8 (1), p.15245-10, Article 15245

2018

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Cuprous iodide dose dependent passivation of MAPbI3 perovskite solar cells

Organic electronics, 2021-04, Vol.91, p.106080, Article 106080

2021

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Functional Studies of Anodic Oxidized β-Ti-28Nb-11Ta-8Zr Alloy for Mechanical, In-vitro and Antibacterial Capability

Scientific reports, 2018-09, Vol.8 (1), p.14253-11, Article 14253

2018

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AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited [Formula Omitted] as Gate Dielectric

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2911

2009

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Postoxidation thermal annealing effects of liquid phase deposited TiO2 on (NH4)2Sx-treated AlGaAs

Thin solid films, 2014-07, Vol.563, p.40-43

2014

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AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate

Solid-state electronics, 2013-04, Vol.82, p.1-5

2013

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Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics

Materials science in semiconductor processing, 2015-01, Vol.29, p.272-276

2015

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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped \hbox as a Gate Dielectric

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.121-127

2012

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AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited \hbox as Gate Dielectric

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2911-2916

2009

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Uptake of TiO 2 Nanoparticles into C. elegans Neurons Negatively Affects Axonal Growth and Worm Locomotion Behavior

ACS applied materials & interfaces, 2018-03, Vol.10 (10), p.8485-8495

2018

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Silica as a Scaffold Layer via Electrospray for MAPbI3 Perovskite-based Solar Cell

Applied Functional Materials, 2021-07, Vol.1 (1), p.9-24

2021

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AlGaN/GaN Metal—Oxide—Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped TiO2 as a Gate Dielectric

IEEE transactions on electron devices, 2012, Vol.59 (1), p.121-127

2012

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Five-year sequential changes in secondary antibiotic resistance of Helicobacter pylori in Taiwan

World journal of gastroenterology : WJG, 2015-10, Vol.21 (37), p.10669-10674

2015

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Liquid-Phase Deposited TiO2 Thin Films on GaN

2007 IEEE Conference on Electron Devices and Solid-State Circuits, 2007, p.649-652

2007

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AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited TiO2 as Gate Dielectric

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2911-2916

2009

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Enhancement-mode In sub(0.53)Ga sub(0.47)As metal-oxide-semiconductor field-effect transistors with sol-gel processed gate dielectrics

Materials science in semiconductor processing, 2015-01, Vol.29, p.272-276

2015

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AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited hbox TiO 2 as Gate Dielectric

IEEE transactions on electron devices, 2009-01, Vol.56 (12)

2009

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Near Room-Temperature Liquid-Phase Deposition of Barium-Doped TiO 2 on n-GaN and its Application to AlGaN/GaN MOSHEMTs

ECS transactions, 2011, Vol.41 (3), p.439-444

2011

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Near-Room-Temperature Selective Oxidation on InAlAs and Application to In[sub 0.52]Al[sub 0.48]As∕In[sub 0.53]Ga[sub 0.47]As Metamorphic HEMTs

Journal of the Electrochemical Society, 2007, Vol.154 (11), p.H957

2007

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A subnanosecond 5-kbit bipolar ECL RAM

IEEE journal of solid-state circuits, 1988-10, Vol.23 (5), p.1265-1267

1988

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Ecological impact assessment of land use in eco-industrial park based on life cycle assessment: A case study of Nanchang High-tech development zone in China

Journal of cleaner production, 2021-06, Vol.300, p.126816, Article 126816

2021

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Localized Surface Plasmon Resonance-Based Colorimetric Assay Featuring Thiol-Capped Au Nanoparticles Combined with a Mobile Application for On-Site Parathion Organophosphate Pesticide Detection

Uptake of TiO2 Nanoparticles into C. elegans Neurons Negatively Affects Axonal Growth and Worm Locomotion Behavior

Liquid-phase-deposited high dielectric zirconium oxide for metal-oxide-semiconductor high electron mobility transistors

Fabrication of highly transparent CsPbBr3 quantum-dot thin film via bath coating for light emission applications

Toxic Effects of Size-tunable Gold Nanoparticles on Caenorhabditis elegans Development and Gene Regulation

Cuprous iodide dose dependent passivation of MAPbI3 perovskite solar cells

Functional Studies of Anodic Oxidized β-Ti-28Nb-11Ta-8Zr Alloy for Mechanical, In-vitro and Antibacterial Capability

AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited [Formula Omitted] as Gate Dielectric

Postoxidation thermal annealing effects of liquid phase deposited TiO2 on (NH4)2Sx-treated AlGaAs

AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate

Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped \hbox as a Gate Dielectric

AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited \hbox as Gate Dielectric

Uptake of TiO 2 Nanoparticles into C. elegans Neurons Negatively Affects Axonal Growth and Worm Locomotion Behavior

Silica as a Scaffold Layer via Electrospray for MAPbI3 Perovskite-based Solar Cell

AlGaN/GaN Metal—Oxide—Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped TiO2 as a Gate Dielectric

Five-year sequential changes in secondary antibiotic resistance of Helicobacter pylori in Taiwan

Liquid-Phase Deposited TiO2 Thin Films on GaN

AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited TiO2 as Gate Dielectric

Enhancement-mode In sub(0.53)Ga sub(0.47)As metal-oxide-semiconductor field-effect transistors with sol-gel processed gate dielectrics

AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited hbox TiO 2 as Gate Dielectric

Near Room-Temperature Liquid-Phase Deposition of Barium-Doped TiO 2 on n-GaN and its Application to AlGaN/GaN MOSHEMTs

Near-Room-Temperature Selective Oxidation on InAlAs and Application to In[sub 0.52]Al[sub 0.48]As∕In[sub 0.53]Ga[sub 0.47]As Metamorphic HEMTs

A subnanosecond 5-kbit bipolar ECL RAM

Ecological impact assessment of land use in eco-industrial park based on life cycle assessment: A case study of Nanchang High-tech development zone in China

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