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CW lasing of current injection blue GaN-based vertical cavity surface emitting laser

Applied physics letters, 2008-04, Vol.92 (14), p.141102-141102-3

2008

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Light-output enhancement in a nitride-based light-emitting diode with 22° undercut sidewalls

IEEE photonics technology letters, 2005-01, Vol.17 (1), p.19-21

2005

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The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5--SiO2 distributed Bragg reflectors

IEEE photonics technology letters, 2006-04, Vol.18 (7), p.877-879

2006

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Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers

Applied physics letters, 2006-09, Vol.89 (12), p.121112-121112-3

2006

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Light-Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching

IEEE photonics technology letters, 2007-06, Vol.19 (11), p.849-851

2007

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Optically Pumped GaN-based Vertical Cavity Surface Emitting Lasers: Technology and Characteristics

Japanese Journal of Applied Physics, 2007-08, Vol.46 (8S), p.5397

2007

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GaN-Based High- Q Vertical-Cavity Light-Emitting Diodes

IEEE electron device letters, 2007-10, Vol.28 (10), p.884-886

2007

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Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2509

2005

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Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-03, Vol.107 (3), p.283-288

2004

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Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off

Japanese Journal of Applied Physics, 2005-11, Vol.44 (11R), p.7910

2005

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Enhanced Light Output in InGaN-Based Light-Emitting Diodes with Omnidirectional One-Dimensional Photonic Crystals

Japanese Journal of Applied Physics, 2006-03, Vol.45 (3R), p.1591

2006

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Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2661

2005

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Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕GaN and Ta2O5∕SiO2 distributed Bragg reflector

Applied physics letters, 2005-08, Vol.87 (8)

2005

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Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3442

2006

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Rapid self-assembly of Ni nanodots on Si substrate covered by a less-adhesive and heat-accumulated SiO2 layers

Applied physics letters, 2006-08, Vol.89 (7)

2006

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Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-10, Vol.113 (2), p.125-129

2004

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Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method

Materials science & engineering. B, Solid-state materials for advanced technology, 2007-01, Vol.136 (2), p.182-186

2007

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Patent Classification Using Hybrid Classifier Systems

Advanced materials research, 2011, Vol.187, p.458-463

2011

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Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4R), p.2556

2006

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Effects of Inhomogeneous Gain and Loss on Nitride-Based Vertical-Cavity Surface Emitting Lasers

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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Fabrication and Characteristics of GaN-Based Microcavity Light-Emitting Diodes with High Reflectivity AlN/GaN Distributed Bragg Reflectors

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3446

2006

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Advanced manufacturing solution to industry 4.0 trend through sensing network and Cloud Computing technologies

2014 IEEE International Conference on Automation Science and Engineering (CASE), 2014, p.1150-1152

2014

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The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes

2007 Conference on Lasers and Electro-Optics (CLEO), 2007, p.1-2

2007

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Iterated Galois Groups over Quadratic Number Field

Kao, Chih-Chiang

2020

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GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN∕GaN distributed Bragg reflector

Applied physics letters, 2008-01, Vol.92 (1)

2008

Volltextzugriff (PDF)

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CW lasing of current injection blue GaN-based vertical cavity surface emitting laser

Light-output enhancement in a nitride-based light-emitting diode with 22° undercut sidewalls

The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5--SiO2 distributed Bragg reflectors

Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers

Light-Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching

Optically Pumped GaN-based Vertical Cavity Surface Emitting Lasers: Technology and Characteristics

GaN-Based High- Q Vertical-Cavity Light-Emitting Diodes

Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate

Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching

Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off

Enhanced Light Output in InGaN-Based Light-Emitting Diodes with Omnidirectional One-Dimensional Photonic Crystals

Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks

Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕GaN and Ta2O5∕SiO2 distributed Bragg reflector

Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces

Rapid self-assembly of Ni nanodots on Si substrate covered by a less-adhesive and heat-accumulated SiO2 layers

Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method

Patent Classification Using Hybrid Classifier Systems

Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off

Effects of Inhomogeneous Gain and Loss on Nitride-Based Vertical-Cavity Surface Emitting Lasers

Fabrication and Characteristics of GaN-Based Microcavity Light-Emitting Diodes with High Reflectivity AlN/GaN Distributed Bragg Reflectors

Advanced manufacturing solution to industry 4.0 trend through sensing network and Cloud Computing technologies

The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes

Iterated Galois Groups over Quadratic Number Field

GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN∕GaN distributed Bragg reflector

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