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Thermal Performance of GaN/Si HEMTs Using Near-Bandgap Thermoreflectance Imaging

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.822-827

2020

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Low-Loss Coplanar Waveguides on GaN-on-Si Substrates

IEEE microwave and wireless components letters, 2018-10, Vol.28 (10), p.861-863

2018

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Degradation Mechanisms for GaN and GaAs High Speed Transistors

Materials, 2012-12, Vol.5 (12), p.2498-2520

2012

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Coplanar waveguide performance comparison of GaN-on-Si and GaN-on-SiC substrates

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017, p.1-4

2017

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Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-09, Vol.36 (5)

2018

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Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation

Nanoscale and microscale thermophysical engineering, 2016-01, Vol.20 (1), p.22-32

2016

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ZnO, GaN, and InN Functionalized Nanowires for Sensing and Photonics Applications

IEEE journal of selected topics in quantum electronics, 2011-07, Vol.17 (4), p.1092-1101

2011

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Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-09, Vol.28 (5), p.1044-1047

2010

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Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-07, Vol.36 (4)

2018

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Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-01, Vol.30 (1)

2012

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SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

International journal of hydrogen energy, 2012-09, Vol.37 (18), p.13783-13788

2012

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Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-01, Vol.30 (1)

2012

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Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors

ECS journal of solid state science and technology, 2018-01, Vol.7 (2), p.Q1-Q7

2018

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Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Sensors and actuators. B, Chemical, 2013-01, Vol.176, p.708-712

2013

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Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-03, Vol.31 (2)

2013

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Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-01, Vol.31 (1)

2013

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Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-03, Vol.31 (2)

2013

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Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) Substrates

ECS journal of solid state science and technology, 2017, Vol.6 (11), p.S3048-S3051

2017

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High breakdown voltage in AlN/GaN metal–insulator–semiconductor high-electron-mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2014-09, Vol.32 (5)

2014

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Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Applied physics letters, 2011-10, Vol.99 (14), p.142107-142107-3

2011

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Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-05, Vol.29 (3)

2011

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Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-03, Vol.31 (2)

2013

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Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-05, Vol.31 (3)

2013

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Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-01, Vol.30 (1)

2012

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GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-09, Vol.31 (5)

2013

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Thermal Performance of GaN/Si HEMTs Using Near-Bandgap Thermoreflectance Imaging

Low-Loss Coplanar Waveguides on GaN-on-Si Substrates

Degradation Mechanisms for GaN and GaAs High Speed Transistors

Coplanar waveguide performance comparison of GaN-on-Si and GaN-on-SiC substrates

Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation

ZnO, GaN, and InN Functionalized Nanowires for Sensing and Photonics Applications

Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors

Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors

Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors

SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors

Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors

Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) Substrates

High breakdown voltage in AlN/GaN metal–insulator–semiconductor high-electron-mobility transistors

Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors

Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors

Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

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