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The evolution of diffusion barriers in copper metallization

JOM (1989), 2007-01, Vol.59 (1), p.44-49

2007

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Investigation of thermal stability of Mo thin-films as the buffer layer and various Cu metallization as interconnection materials for thin film transistor–liquid crystal display applications

Thin solid films, 2007-06, Vol.515 (18), p.7209-7216

2007

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The 260 °C phase equilibria of the Sn–Sb–Cu ternary system and interfacial reactions at the Sn–Sb/Cu joints

Intermetallics, 2007-08, Vol.15 (8), p.1027-1037

2007

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Investigation of Dissolution Behavior of Metallic Substrates and Intermetallic Compound in Molten Lead-free Solders

Journal of electronic materials, 2008-01, Vol.37 (1), p.73-83

2008

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The effect of non-reactive alloying elements on the growth kinetics of the intermetallic compound between liquid Sn-based eutectic solders and Ni substrates

Journal of alloys and compounds, 2007-08, Vol.440 (1), p.333-340

2007

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Characteristics of reactively sputtered niobium nitride thin films as diffusion barriers for Cu metallization

Electronic Materials Letters, 2013, 9(5), , pp.593-597

2013

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Phase equilibria of the Sn–Sb–Ag ternary system and interfacial reactions at the Sn–Sb/Ag joints at 400 °C and 150 °C

Intermetallics, 2008-02, Vol.16 (2), p.230-238

2008

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Growth of tantalum boron nitride films on si by radio frequency reactive sputtering: effect of N2/Ar flow ratio

Materials chemistry and physics, 2003-12, Vol.82 (3), p.691-697

2003

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Grain Boundary Diffusion of Copper in Tantalum Nitride Thin Films

Journal of the Electrochemical Society, 1999-09, Vol.146 (9), p.3466-3471

1999

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Surface Modification with Poly(sulfobetaine methacrylate-co-acrylic acid) To Reduce Fibrinogen Adsorption, Platelet Adhesion, and Plasma Coagulation

Biomacromolecules, 2011-12, Vol.12 (12), p.4348-4356

2011

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Atomic force microscopy and Raman spectroscopy studies on the oxidation of Cu thin films

Journal of applied physics, 1995-05, Vol.77 (10), p.5422-5425

1995

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Thermal stability, adhesion and electrical studies on (Ti,Zr)Nx thin films as low resistive diffusion barriers between Cu and Si

Electronic Materials Letters, 2014, 10(3), , pp.551-556

2014

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A novel two-step MOCVD for producing thin copper films with a mixture of ethyl alcohol and water as the additive

Thin solid films, 2006-03, Vol.498 (1), p.43-49

2006

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Diffusion barrier properties of sputtered TaNx between Cu and Si using TaN as the target

Materials chemistry and physics, 2003-06, Vol.80 (3), p.690-695

2003

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Gadolinia-doped ceria films deposited by RF reactive magnetron sputtering

Solid state ionics, 2009-10, Vol.180 (26), p.1421-1428

2009

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Characteristics of Sputter-deposited Gadolinia-doped Ceria Thin Films on Al2O3/SiO2/Si Systems

Chinese journal of mechanical engineering, 2009-06, Vol.22 (3), p.384-389

KUO, Yulin

2009

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Growth of 20 mol% Gd-doped ceria thin films by RF reactive sputtering: The O 2/Ar flow ratio effect

Journal of the European Ceramic Society, 2011-12, Vol.31 (16), p.3127-3135

2011

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Growth of Tantalum Nitride Films on Si by Radio Frequency Reactive Sputtering: Effect of N 2 / Ar Flow Ratio

Journal of the Electrochemical Society, 1999-05, Vol.146 (5), p.1835-1839

1999

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Growth of 20mol% Gd-doped ceria thin films by RF reactive sputtering: The O2/Ar flow ratio effect

Journal of the European Ceramic Society, 2011-12, Vol.31 (16), p.3127-3135

2011

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Growth of Tantalum Nitride Films on Si by Radio Frequency Reactive Sputtering of Ta in N[sub 2]/Ar Gas Mixtures: Effect of Bias

Journal of the Electrochemical Society, 2000, Vol.147 (2), p.713

2000

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Interfacial reactions on Pb-free solders with Au/Pd/Ni/Cu multilayer substrates

Journal of alloys and compounds, 2010-07, Vol.503 (1), p.25-30

2010

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A comparative study of Ar and H2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature

Diamond and related materials, 2001-11, Vol.10 (11), p.2075-2083

2001

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Effects of different printed-circuit-board surface finishes on the formation and growth of intermetallics at thermomechanically fatigued, small outline J leads/Sn-Ag-Cu interfaces

Journal of electronic materials, 2004-03, Vol.33 (3), p.157-161

2004

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Nucleation and growth of highly oriented lead titanate thin films prepared by a sol-gel method

Applied surface science, 1998-01, Vol.125 (1), p.51-57

1998

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Interfacial reactions of Pb-free solders with Au/Pd/Ni/brass multilayer substrates

Journal of alloys and compounds, 2012-03, Vol.517, p.111-117

2012

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The evolution of diffusion barriers in copper metallization

Investigation of thermal stability of Mo thin-films as the buffer layer and various Cu metallization as interconnection materials for thin film transistor–liquid crystal display applications

The 260 °C phase equilibria of the Sn–Sb–Cu ternary system and interfacial reactions at the Sn–Sb/Cu joints

Investigation of Dissolution Behavior of Metallic Substrates and Intermetallic Compound in Molten Lead-free Solders

The effect of non-reactive alloying elements on the growth kinetics of the intermetallic compound between liquid Sn-based eutectic solders and Ni substrates

Characteristics of reactively sputtered niobium nitride thin films as diffusion barriers for Cu metallization

Phase equilibria of the Sn–Sb–Ag ternary system and interfacial reactions at the Sn–Sb/Ag joints at 400 °C and 150 °C

Growth of tantalum boron nitride films on si by radio frequency reactive sputtering: effect of N2/Ar flow ratio

Grain Boundary Diffusion of Copper in Tantalum Nitride Thin Films

Surface Modification with Poly(sulfobetaine methacrylate-co-acrylic acid) To Reduce Fibrinogen Adsorption, Platelet Adhesion, and Plasma Coagulation

Atomic force microscopy and Raman spectroscopy studies on the oxidation of Cu thin films

Thermal stability, adhesion and electrical studies on (Ti,Zr)Nx thin films as low resistive diffusion barriers between Cu and Si

A novel two-step MOCVD for producing thin copper films with a mixture of ethyl alcohol and water as the additive

Diffusion barrier properties of sputtered TaNx between Cu and Si using TaN as the target

Gadolinia-doped ceria films deposited by RF reactive magnetron sputtering

Characteristics of Sputter-deposited Gadolinia-doped Ceria Thin Films on Al2O3/SiO2/Si Systems

Growth of 20 mol% Gd-doped ceria thin films by RF reactive sputtering: The O 2/Ar flow ratio effect

Growth of Tantalum Nitride Films on Si by Radio Frequency Reactive Sputtering: Effect of N 2 / Ar Flow Ratio

Growth of 20mol% Gd-doped ceria thin films by RF reactive sputtering: The O2/Ar flow ratio effect

Growth of Tantalum Nitride Films on Si by Radio Frequency Reactive Sputtering of Ta in N[sub 2]/Ar Gas Mixtures: Effect of Bias

Interfacial reactions on Pb-free solders with Au/Pd/Ni/Cu multilayer substrates

A comparative study of Ar and H2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature

Effects of different printed-circuit-board surface finishes on the formation and growth of intermetallics at thermomechanically fatigued, small outline J leads/Sn-Ag-Cu interfaces

Nucleation and growth of highly oriented lead titanate thin films prepared by a sol-gel method

Interfacial reactions of Pb-free solders with Au/Pd/Ni/brass multilayer substrates

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