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Ordered fragmentation of oxide thin films at submicron scale

Nature communications, 2016-10, Vol.7 (1), p.13148-13148, Article 13148

2016

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Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates

ACS applied materials & interfaces, 2014-03, Vol.6 (5), p.3263-3274

2014

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Investigating the stability of defects in MoO3 and its role in organic solar cells

Solar energy materials and solar cells, 2012-04, Vol.99, p.197-203

2012

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Highly conductive and transparent aluminum-doped zinc oxide thin films deposited on polyethylene terephthalate substrates by pulsed laser deposition

Thin solid films, 2013-10, Vol.545, p.285-290

2013

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Examining the transparency of gallium-doped zinc oxide for photovoltaic applications

Solar energy materials and solar cells, 2011-08, Vol.95 (8), p.2400-2406

2011

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Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions

Surface science, 2012-11, Vol.606 (21-22), p.1638-1642

2012

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Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

Applied physics letters, 2012-02, Vol.100 (6)

2012

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Thermal stability of HfOxNy gate dielectrics on p-GaAs substrates

Semiconductor science and technology, 2010-12, Vol.25 (12), p.125009

2010

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An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point

Journal of materials chemistry, 2012-01, Vol.22 (34), p.17887-17892

2012

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Diameter dependence of the void formation in the oxidation of nickel nanowires

Nanotechnology, 2011-06, Vol.22 (23), p.235606

2011

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Low temperature processing solid-state dye sensitized solar cells

Applied physics letters, 2012-03, Vol.100 (11), p.113901-113901-4

2012

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Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures

Journal of applied physics, 2011-11, Vol.110 (9), p.093701-093701-7

2011

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Multi-vortex states in magnetic nanoparticles

Applied physics letters, 2014-10, Vol.105 (15)

2014

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Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric

ACS applied materials & interfaces, 2013-02, Vol.5 (3), p.949-957

2013

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Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates

Journal of applied physics, 2008-04, Vol.103 (8), p.083702-083702-12

2008

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Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate

Thin solid films, 2013-05, Vol.534, p.177-182

2013

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Ambiguity in the magnitude and direction of the derived interface dipole in lanthanum aluminate heterostructures: Implications and proposed solution

Journal of applied physics, 2011-05, Vol.109 (9), p.093701-093701-8

2011

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Three-dimensional metamaterials fabricated using Proton Beam Writing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-07, Vol.306, p.271-274

2013

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Effects of electric field in band alignment measurements using photoelectron spectroscopy

Surface and interface analysis, 2012-08, Vol.44 (8), p.1091-1095

2012

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Advanced applications in microphotonics using proton beam writing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-06, Vol.267 (12), p.2280-2284

2009

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Determination of atomic Ni interaction with TiO2 by XPS

Surface and interface analysis, 2010-06, Vol.42 (6-7), p.878-881

2010

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Heterostructures of germanium nanowires and germanium–silicon oxide nanotubes and growth mechanisms

Nanotechnology, 2009-10, Vol.20 (42), p.425604-425604

2009

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Proton beam writing: a platform technology for nanowire production

Microsystem technologies, 2008-10, Vol.14 (9-11), p.1343-1348

2008

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Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

Surface science, 2006-06, Vol.600 (11), p.2288-2292

2006

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Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% cu and Ti on SiO2

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-08, Vol.77 (1), p.101-105

2000

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Ordered fragmentation of oxide thin films at submicron scale

Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates

Investigating the stability of defects in MoO3 and its role in organic solar cells

Highly conductive and transparent aluminum-doped zinc oxide thin films deposited on polyethylene terephthalate substrates by pulsed laser deposition

Examining the transparency of gallium-doped zinc oxide for photovoltaic applications

Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions

Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

Thermal stability of HfOxNy gate dielectrics on p-GaAs substrates

An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point

Diameter dependence of the void formation in the oxidation of nickel nanowires

Low temperature processing solid-state dye sensitized solar cells

Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures

Multi-vortex states in magnetic nanoparticles

Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric

Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates

Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate

Ambiguity in the magnitude and direction of the derived interface dipole in lanthanum aluminate heterostructures: Implications and proposed solution

Three-dimensional metamaterials fabricated using Proton Beam Writing

Effects of electric field in band alignment measurements using photoelectron spectroscopy

Advanced applications in microphotonics using proton beam writing

Determination of atomic Ni interaction with TiO2 by XPS

Heterostructures of germanium nanowires and germanium–silicon oxide nanotubes and growth mechanisms

Proton beam writing: a platform technology for nanowire production

Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% cu and Ti on SiO2

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