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33.1 A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity

2023 IEEE International Solid- State Circuits Conference (ISSCC), 2023, p.494-496

2023

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Recent Progress and Next Directions for Embedded MRAM Technology

2019 Symposium on VLSI Technology, 2019, p.T190-T191

2019

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On-Chip Voltage Down Converter to Improve SRAM Read/Write Margin and Static Power for Sub-Nano CMOS Technology

IEEE journal of solid-state circuits, 2007-09, Vol.42 (9), p.2061-2070

2007

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Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- \mu A Sensing Resolution, and 17.5-nS Read Access Time

IEEE journal of solid-state circuits, 2019-04, Vol.54 (4), p.1029-1038

2019

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A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision SRAM-based Compute-in-Memory with Configurable Bit-width For AI Edge Applications

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.24-25

2022

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34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm2 and 3.78Mb/mm2 Fully-Digital Compute-in-Memory Macro Supporting INT12 × INT12 with a Parallel-MAC Architecture and Foundry 6T-SRAM Bit Cell

2024 IEEE International Solid-State Circuits Conference (ISSCC), 2024, Vol.67, p.572-574

2024

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A 4nm 6163-TOPS/W/b \mathbf/b} SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update

2023 IEEE International Solid- State Circuits Conference (ISSCC), 2023, p.132-134

2023

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Acetonyltriphenylphosphonium bromide in organic synthesis: An extremely efficient catalyst for the protection and deprotection of alcohols as alkyl vinyl ethers

Tetrahedron letters, 1999-03, Vol.40 (12), p.2389-2392

1999

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Acetonyltriphenylphosphonium bromide and its polymer-supported analogues as catalysts in protection and deprotection of alcohols as alkyl vinyl ethers

Tetrahedron, 2001-07, Vol.57 (28), p.5991-6001

2001

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22nm STT-MRAM for Reflow and Automotive Uses with High Yield, Reliability, and Magnetic Immunity and with Performance and Shielding Options

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.2.7.1-2.7.4

2019

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Acetonyltriphenylphosphonium bromide in organic synthesis: a useful catalyst in the cyclotrimerization of aldehydes

Tetrahedron, 2001-07, Vol.57 (29), p.6181-6188

2001

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Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time

2018 IEEE Symposium on VLSI Circuits, 2018, p.79-80

2018

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A Reflow-capable, Embedded 8Mb STT-MRAM Macro with 9nS Read Access Time in 16nm FinFET Logic CMOS Process

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.11.4.1-11.4.4

2020

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Design Challenges and Solutions of Emerging Nonvolatile Memory for Embedded Applications

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.2.4.1-2.4.4

2021

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The Reaction of Triphenylphosphonium or Triphenylarsonium Salts with Aldehyde: Effect of the Counteranion on their Reactivity

Tetrahedron, 2000-09, Vol.56 (40), p.7893-7902

2000

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Syntheses of α,β-Unsaturated Carbonyl Compounds from the Reactions of Monosubstituted Ozonides with Stable Phosphonium Ylides

Tetrahedron, 2000-11, Vol.56 (47), p.9269-9279

2000

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The Bonding Structure of Quadricyclanylidene Derivatives

Journal of the Chinese Chemical Society (Taipei), 2000-02, Vol.47 (1), p.149-153

2000

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Acetonyltriphenylphosphonium Bromide and Its Polymer-Supported Analogues as Catalysts for the Protection of Carbonyl Compounds as Acetals or Thioacetals

Synthetic communications, 2003-01, Vol.33 (16), p.2829-2842

2003

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Recent Progress and Next Directions for Embedded MRAM Technology

2019 Symposium on VLSI Circuits, 2019, p.T190-T191

2019

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Unsupervised Anomaly Detection Using Light Switches for Smart Nursing Homes

2016 IEEE 14th Intl Conf on Dependable, Autonomic and Secure Computing, 14th Intl Conf on Pervasive Intelligence and Computing, 2nd Intl Conf on Big Data Intelligence and Computing and Cyber Science and Technology Congress(DASC/PiCom/DataCom/CyberSciTech), 2016, p.803-810

2016

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An economic assistance strategy for autonomous driving system

2015 International Conference on Advanced Robotics and Intelligent Systems (ARIS), 2015, p.1-4

2015

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Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub-[Formula Omitted] A Sensing Resolution, and 17.5-nS Read Access Time

IEEE journal of solid-state circuits, 2019-01, Vol.54 (4), p.1029

2019

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The Structures of Quadricyclanone and its 3-Cyclopentadienylidene Derivative

Journal of the Chinese Chemical Society (Taipei), 1995-12, Vol.42 (6), p.943-946

1995

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An Efficient Method for Preparing the α-Deuterated-α,β-Unsaturated Carbonyl Compounds by Reaction of Stable Phosphonium Ylides with Carbonyl Compounds in Deuterium Oxide

Synthetic communications, 2000-01, Vol.30 (1), p.97-118

2000

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A 5-nm 254-TOPS/W 221-TOPS/mm2 Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations

2022 IEEE International Solid- State Circuits Conference (ISSCC), 2022, Vol.65, p.1-3

2022

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33.1 A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity

Recent Progress and Next Directions for Embedded MRAM Technology

On-Chip Voltage Down Converter to Improve SRAM Read/Write Margin and Static Power for Sub-Nano CMOS Technology

Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- \mu A Sensing Resolution, and 17.5-nS Read Access Time

A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision SRAM-based Compute-in-Memory with Configurable Bit-width For AI Edge Applications

34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm2 and 3.78Mb/mm2 Fully-Digital Compute-in-Memory Macro Supporting INT12 × INT12 with a Parallel-MAC Architecture and Foundry 6T-SRAM Bit Cell

A 4nm 6163-TOPS/W/b \mathbf/b} SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update

Acetonyltriphenylphosphonium bromide in organic synthesis: An extremely efficient catalyst for the protection and deprotection of alcohols as alkyl vinyl ethers

Acetonyltriphenylphosphonium bromide and its polymer-supported analogues as catalysts in protection and deprotection of alcohols as alkyl vinyl ethers

22nm STT-MRAM for Reflow and Automotive Uses with High Yield, Reliability, and Magnetic Immunity and with Performance and Shielding Options

Acetonyltriphenylphosphonium bromide in organic synthesis: a useful catalyst in the cyclotrimerization of aldehydes

Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time

A Reflow-capable, Embedded 8Mb STT-MRAM Macro with 9nS Read Access Time in 16nm FinFET Logic CMOS Process

Design Challenges and Solutions of Emerging Nonvolatile Memory for Embedded Applications

The Reaction of Triphenylphosphonium or Triphenylarsonium Salts with Aldehyde: Effect of the Counteranion on their Reactivity

Syntheses of α,β-Unsaturated Carbonyl Compounds from the Reactions of Monosubstituted Ozonides with Stable Phosphonium Ylides

The Bonding Structure of Quadricyclanylidene Derivatives

Acetonyltriphenylphosphonium Bromide and Its Polymer-Supported Analogues as Catalysts for the Protection of Carbonyl Compounds as Acetals or Thioacetals

Recent Progress and Next Directions for Embedded MRAM Technology

Unsupervised Anomaly Detection Using Light Switches for Smart Nursing Homes

An economic assistance strategy for autonomous driving system

Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub-[Formula Omitted] A Sensing Resolution, and 17.5-nS Read Access Time

The Structures of Quadricyclanone and its 3-Cyclopentadienylidene Derivative

An Efficient Method for Preparing the α-Deuterated-α,β-Unsaturated Carbonyl Compounds by Reaction of Stable Phosphonium Ylides with Carbonyl Compounds in Deuterium Oxide

A 5-nm 254-TOPS/W 221-TOPS/mm2 Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations

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