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Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers

IEEE electron device letters, 1997-05, Vol.18 (5), p.206-208

1997

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A review of SIMS techniques for characterization of ultra low energy ion implants

Proceedings of 11th International Conference on Ion Implantation Technology, 1996, p.599-602

1996

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Tool cleanliness characterization for improving productivity and yields

2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2008, p.1-3

Chia, V.K.F.

2008

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A review of analytical techniques for process control of contaminants introduced during ion implantation

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999, Vol.1, p.626-629 vol.1

1999

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VPD/SIMS Measurement of Surface Al on Silicon Substrates

MRS proceedings, 1992, Vol.259, Article 167

1992

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Understanding the correlation of TXRF and surface SIMS

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1998, Vol.2, p.1063-1065 vol.2

1998

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Ultrahigh‐vacuum apparatus for surface spectroscopy and characterization at cryogenic temperatures

Review of scientific instruments, 1989-06, Vol.60 (6), p.1161-1166

1989

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Cryogenic sample manipulator for multipurpose sample analysis

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1989-01, Vol.7 (1), p.108-109

1989

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Ion implanter diagnostics using SurfaceSIMS

Proceedings of 11th International Conference on Ion Implantation Technology, 1996, p.512-515

1996

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SIMS modular approach to ultra-low energy implants for accurate TCAD process simulation modeling

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999, Vol.1, p.461-464 vol.1

1999

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Test structure and methodology for experimental extraction of threshold voltage shifts due to quantum mechanical effects in MOS inversion layers

1997 IEEE International Conference on Microelectronic Test Structures Proceedings, 1997, p.165-168

1997

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Electrochemical processes at well-defined surfaces

Journal of electroanalytical chemistry and interfacial electrochemistry, 1984-01, Vol.168 (1), p.43-66

1984

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Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers

A review of SIMS techniques for characterization of ultra low energy ion implants

Tool cleanliness characterization for improving productivity and yields

A review of analytical techniques for process control of contaminants introduced during ion implantation

VPD/SIMS Measurement of Surface Al on Silicon Substrates

Understanding the correlation of TXRF and surface SIMS

Ultrahigh‐vacuum apparatus for surface spectroscopy and characterization at cryogenic temperatures

Cryogenic sample manipulator for multipurpose sample analysis

Ion implanter diagnostics using SurfaceSIMS

SIMS modular approach to ultra-low energy implants for accurate TCAD process simulation modeling

Test structure and methodology for experimental extraction of threshold voltage shifts due to quantum mechanical effects in MOS inversion layers

Electrochemical processes at well-defined surfaces

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