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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.547-556

2008

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Stochastic Variability in Silicon Double-Gate Lateral Tunnel Field-Effect Transistors

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.84-91

2013

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On the origin of enhanced sensitivity in nanoscale FET-based biosensors

Proceedings of the National Academy of Sciences - PNAS, 2014-04, Vol.111 (14), p.5111-5116

2014

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Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

Journal of applied physics, 2004-09, Vol.96 (6), p.3467-3472

2004

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Device- and Circuit-Level Variability Caused by Line Edge Roughness for Sub-32-nm FinFET Technologies

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2057-2063

2012

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A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors

IEEE electron device letters, 2012-10, Vol.33 (10), p.1468-1470

2012

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Channel length dependent sensitivity of Schottky contacted silicon nanowire field-effect transistor sensors

Applied physics letters, 2012-03, Vol.100 (12), p.123504-123504-4

2012

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Effective dark current suppression with asymmetric MSM photodetectors in Group IV semiconductors

IEEE photonics technology letters, 2003-11, Vol.15 (11), p.1585-1587

2003

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Scalability and electrical properties of germanium oxynitride MOS dielectrics

IEEE electron device letters, 2004-09, Vol.25 (9), p.613-615

2004

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Optimization of the Sensitivity of FET-Based Biosensors via Biasing and Surface Charge Engineering

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.3104-3110

2012

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Interactions Between Line Edge Roughness and Random Dopant Fluctuation in Nonplanar Field-Effect Transistor Variability

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3277-3284

2013

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Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si

IEEE electron device letters, 2005-05, Vol.26 (5), p.311-313

2005

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Junctionless Silicon and In0.53Ga0.47As Transistors-Part II: Device Variability From Random Dopant Fluctuation

IEEE transactions on electron devices, 2015-10, Vol.62 (10), p.3208-3214

2015

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Electrostatic Modeling and Insights Regarding Multigate Lateral Tunneling Transistors

IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2712-2720

2013

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Variability of Inversion-Mode and Junctionless FinFETs due to Line Edge Roughness

IEEE electron device letters, 2011-11, Vol.32 (11), p.1489-1491

2011

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Tunneling Negative Differential Resistance-Assisted STT-RAM for Efficient Read and Write Operations

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.121-129

2017

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Engineering finger-operated peristaltic pumps

Microfluidics and nanofluidics, 2018-01, Vol.22 (1), Article 14

2018

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Gate-Induced Source Tunneling FET (GISTFET)

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2390-2395

2015

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Junctionless Silicon and In0.53Ga0.47As Transistors-Part I: Nominal Device Evaluation With Quantum Simulations

IEEE transactions on electron devices, 2015-10, Vol.62 (10), p.3199-3207

2015

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Nanoparticles suppress fluid instabilities in the thermal drawing of ultralong nanowires

Nature communications, 2020-11, Vol.11 (1), p.5932-5932, Article 5932

2020

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Carbon-ionogel supercapacitors for integrated microelectronics

Nanotechnology, 2016-01, Vol.27 (3), p.035204-035204

2016

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Germanium n -type shallow junction activation dependences

Applied physics letters, 2005-08, Vol.87 (9), p.091909-091909-3

2005

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Nanoscale germanium MOS Dielectrics-part II: high-/spl kappa/ gate dielectrics

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1509-1516

2006

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Self-Locking Optoelectronic Tweezers for Single-Cell and Microparticle Manipulation across a Large Area in High Conductivity Media

Scientific reports, 2016-03, Vol.6 (1), p.22630-22630, Article 22630

2016

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PROCEED: A Pareto Optimization-Based Circuit-Level Evaluator for Emerging Devices

IEEE transactions on very large scale integration (VLSI) systems, 2016-01, Vol.24 (1), p.192-205

2016

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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Stochastic Variability in Silicon Double-Gate Lateral Tunnel Field-Effect Transistors

On the origin of enhanced sensitivity in nanoscale FET-based biosensors

Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

Device- and Circuit-Level Variability Caused by Line Edge Roughness for Sub-32-nm FinFET Technologies

A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors

Channel length dependent sensitivity of Schottky contacted silicon nanowire field-effect transistor sensors

Effective dark current suppression with asymmetric MSM photodetectors in Group IV semiconductors

Scalability and electrical properties of germanium oxynitride MOS dielectrics

Optimization of the Sensitivity of FET-Based Biosensors via Biasing and Surface Charge Engineering

Interactions Between Line Edge Roughness and Random Dopant Fluctuation in Nonplanar Field-Effect Transistor Variability

Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si

Junctionless Silicon and In0.53Ga0.47As Transistors-Part II: Device Variability From Random Dopant Fluctuation

Electrostatic Modeling and Insights Regarding Multigate Lateral Tunneling Transistors

Variability of Inversion-Mode and Junctionless FinFETs due to Line Edge Roughness

Tunneling Negative Differential Resistance-Assisted STT-RAM for Efficient Read and Write Operations

Engineering finger-operated peristaltic pumps

Gate-Induced Source Tunneling FET (GISTFET)

Junctionless Silicon and In0.53Ga0.47As Transistors-Part I: Nominal Device Evaluation With Quantum Simulations

Nanoparticles suppress fluid instabilities in the thermal drawing of ultralong nanowires

Carbon-ionogel supercapacitors for integrated microelectronics

Germanium n -type shallow junction activation dependences

Nanoscale germanium MOS Dielectrics-part II: high-/spl kappa/ gate dielectrics

Self-Locking Optoelectronic Tweezers for Single-Cell and Microparticle Manipulation across a Large Area in High Conductivity Media

PROCEED: A Pareto Optimization-Based Circuit-Level Evaluator for Emerging Devices

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