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On the effects of non-uniform property distribution due to compression in the gas diffusion layer of a PEMFC

International journal of hydrogen energy, 2010-04, Vol.35 (7), p.2936-2948

2010

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Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1876-1884

2003

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Positive secondary ion yield enhancement of metal elements using trichlorotrifluoroethane and tetrachloroethene backfilling

Applied surface science, 2004-06, Vol.231, p.127-130

2004

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Al and B ion-implantations in 6H- and 3C-SiC

Journal of applied physics, 1995-03, Vol.77 (6), p.2479-2485

1995

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Effect of channel step-depth on the performance of proton exchange membrane fuel cells

Proceedings of the Institution of Mechanical Engineers. Part A, Journal of power and energy, 2007-01, Vol.221 (5), p.617-625

2007

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Phosphorus and boron implantation in 6H–SiC

Journal of applied physics, 1997-05, Vol.81 (10), p.6635-6641

1997

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Nitrogen and aluminum implantation in high resistivity silicon carbide

Journal of applied physics, 1997-12, Vol.82 (11), p.5327-5333

1997

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Epitaxial Si-based tunnel diodes

Thin solid films, 2000-12, Vol.380 (1), p.145-150

2000

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Donor ion-implantation doping into SiC

Journal of electronic materials, 1999-03, Vol.28 (3), p.334-340

1999

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Material and n–p junction characteristics of As- and Sb-implanted SiC

Diamond and related materials, 2000-11, Vol.9 (11), p.1887-1896

2000

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Elevated temperature nitrogen implants in 6H-SiC

Journal of electronic materials, 1996-05, Vol.25 (5), p.885-892

1996

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Rapid thermal annealing of ion implanted 6H-SiC by microwave processing

Journal of electronic materials, 1997-03, Vol.26 (3), p.144-150

1997

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Ion implantation doping of OMCVD grown GaN

Journal of electronic materials, 1997-03, Vol.26 (3), p.334-339

1997

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0. 4--3. 0-MeV-range Be-ion implantations into InP:Fe

Journal of applied physics, 1991-09, Vol.70:6

1991

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PN junction formation in 6HSiC by acceptor implantation into n-type substrate

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-12, Vol.106 (1), p.333-338

1995

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On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire

MRS proceedings, 1995, Vol.395, Article 679

1995

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Ion implantation into ( x 11) A -oriented InP and GaAs ( x ≤4)

Journal of applied physics, 1994-06, Vol.75 (12), p.7774-7778

1994

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0.4-3.0-MeV-range Be-ion implantations into InP:Fe

Journal of applied physics, 1991-09, Vol.70 (6), p.2973-2978

1991

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Co, Fe, and Ti implants in InGaAs and Co implants in InP at 200°C

Journal of electronic materials, 1992-09, Vol.21 (9), p.923-928

1992

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SiGe diffusion barriers for P-doped Si/SiGe resonant interband tunnel diodes

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2002, p.265-269

2002

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P–N junction formation in 6H-SiC by acceptor implantation into n-type substrate

Ion Beam Modification of Materials, 1996, p.333-338

1996

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Positivity-preserving cell-centered Lagrangian schemes for multi-material compressible flows: From first-order to high-orders. Part II: The two-dimensional case

Journal of computational physics, 2016-05, Vol.312, p.416-442

2016

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Positivity-preserving cell-centered Lagrangian schemes for multi-material compressible flows: From first-order to high-orders. Part I: The one-dimensional case

Journal of computational physics, 2016-05, Vol.312, p.385-415

2016

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Association of Left Ventricular Longitudinal Strain with Mortality among Stable Hemodialysis Patients with Preserved Left Ventricular Ejection Fraction

Clinical journal of the American Society of Nephrology, 2013-09, Vol.8 (9), p.1564-1574

2013

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Anthocyanins Induce the Activation of Phase II Enzymes through the Antioxidant Response Element Pathway against Oxidative Stress-Induced Apoptosis

Journal of agricultural and food chemistry, 2007-11, Vol.55 (23), p.9427-9435

2007

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On the effects of non-uniform property distribution due to compression in the gas diffusion layer of a PEMFC

Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

Positive secondary ion yield enhancement of metal elements using trichlorotrifluoroethane and tetrachloroethene backfilling

Al and B ion-implantations in 6H- and 3C-SiC

Effect of channel step-depth on the performance of proton exchange membrane fuel cells

Phosphorus and boron implantation in 6H–SiC

Nitrogen and aluminum implantation in high resistivity silicon carbide

Epitaxial Si-based tunnel diodes

Donor ion-implantation doping into SiC

Material and n–p junction characteristics of As- and Sb-implanted SiC

Elevated temperature nitrogen implants in 6H-SiC

Rapid thermal annealing of ion implanted 6H-SiC by microwave processing

Ion implantation doping of OMCVD grown GaN

0. 4--3. 0-MeV-range Be-ion implantations into InP:Fe

PN junction formation in 6HSiC by acceptor implantation into n-type substrate

On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire

Ion implantation into ( x 11) A -oriented InP and GaAs ( x ≤4)

0.4-3.0-MeV-range Be-ion implantations into InP:Fe

Co, Fe, and Ti implants in InGaAs and Co implants in InP at 200°C

SiGe diffusion barriers for P-doped Si/SiGe resonant interband tunnel diodes

P–N junction formation in 6H-SiC by acceptor implantation into n-type substrate

Positivity-preserving cell-centered Lagrangian schemes for multi-material compressible flows: From first-order to high-orders. Part II: The two-dimensional case

Positivity-preserving cell-centered Lagrangian schemes for multi-material compressible flows: From first-order to high-orders. Part I: The one-dimensional case

Association of Left Ventricular Longitudinal Strain with Mortality among Stable Hemodialysis Patients with Preserved Left Ventricular Ejection Fraction

Anthocyanins Induce the Activation of Phase II Enzymes through the Antioxidant Response Element Pathway against Oxidative Stress-Induced Apoptosis

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