UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 263

Sortiert nach

GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

IEEE photonics technology letters, 2001-08, Vol.13 (8), p.848-850

2001

Volltextzugriff (PDF)

Immediate effect of scapular stabilisation exercises on shoulder and forearm muscles activation while playing the violin

Gait & posture, 2020-09, Vol.81, p.303-303

2020

Volltextzugriff (PDF)

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

IEEE journal of quantum electronics, 2006-09, Vol.42 (9), p.851-858

2006

Volltextzugriff (PDF)

Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

Journal of lightwave technology, 2008-06, Vol.26 (11), p.1387-1395

2008

Volltextzugriff (PDF)

Dynamic Characteristics and Linewidth Enhancement Factor of Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.844-849

2009

Volltextzugriff (PDF)

High-Power Single-Mode Submonolayer Quantum-Dot Photonic Crystal Vertical-Cavity Surface-Emitting Lasers

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1318-1323

2007

Volltextzugriff (PDF)

Singlemode (SMSR >40 dB) proton- implanted photonic crystal vertical-cavity surface-emitting lasers

Electronics letters, 2005, Vol.41 (6), p.326-328

2005

Volltextzugriff (PDF)

Single-mode monolithic quantum-dot VCSEL in 1.3 [mu]m with sidemode suppression ratio over 30 dB

IEEE photonics technology letters, 2006-04, Vol.18 (7), p.847

2006

Volltextzugriff (PDF)

1.3-[mu]m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

IEEE photonics technology letters, 2006-01, Vol.18 (2), p.418

2006

Volltextzugriff (PDF)

Near-field magneto-photoluminescence of quantum-dot-like composition fluctuations in GaAsN and InGaAsN alloys

Physica. E, Low-dimensional systems & nanostructures, 2004-03, Vol.21 (2), p.385-389

2004

Volltextzugriff (PDF)

In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface

Journal of crystal growth, 2013-05, Vol.371, p.50-55

2013

Volltextzugriff (PDF)

Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection

IEEE photonics technology letters, 2010-02, Vol.22 (3), p.179-181

2010

Volltextzugriff (PDF)

1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

IEEE photonics technology letters, 2006-01, Vol.18 (2), p.418-420

2006

Volltextzugriff (PDF)

Single-mode monolithic quantum-dot VCSEL in 1.3 μm with sidemode suppression ratio over 30 dB

IEEE photonics technology letters, 2006-04, Vol.18 (7), p.847-849

2006

Volltextzugriff (PDF)

Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.278-280

2004

Volltextzugriff (PDF)

Singlemode InAs quantum dot photonic crystal VCSELs

Electronics letters, 2005-09, Vol.41 (20), p.1130-1132

2005

Volltextzugriff (PDF)

High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy

Journal of crystal growth, 2004-02, Vol.262 (1), p.84-88

2004

Volltextzugriff (PDF)

Tunable optical group delay in quantum dot vertical-cavity surface-emitting laser at 10 GHz

Electronics letters, 2006-08, Vol.42 (18), p.1036

2006

Volltextzugriff (PDF)

Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB

IEEE photonics technology letters, 2006-04, Vol.18 (7), p.847-849

2006

Volltextzugriff (PDF)

1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

IEEE photonics technology letters, 2006-01, Vol.18 (2), p.418-420

2006

Volltextzugriff (PDF)

Optical and deep-level spectroscopic study on In 0.38GaAsN x /GaAs single-quantum-well structures of x⩾3% grown by molecular beam epitaxy

Journal of crystal growth, 2005, Vol.278 (1), p.575-579

2005

Volltextzugriff (PDF)

1.3 [micro sign]m quantum dot vertical-cavity surface-emitting laser with external light injection

Electronics letters, 2005, Vol.41 (22), p.1222

2005

Volltextzugriff (PDF)

Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

Applied physics. B, Lasers and optics, 2005-12, Vol.81 (8), p.1097-1100

2005

Volltextzugriff (PDF)

High-power (200 mW) singlemode operation of InGaAsN∕GaAs ridge waveguide lasers with wavelength around 1.3 [micro sign]m

Electronics letters, 2003, Vol.39 (24), p.1726

2003

Volltextzugriff (PDF)

Polarization switching in 1.3-µm quantum dot vertical cavity surface emitting lasers

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, 2009, p.1-2

2009

Volltextzugriff (PDF)

1 – 25 von 263

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(189)
Mit Volltextzugriff
(239)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(160)
Life Sciences & Biomedicine
(101)
Humans
(79)
Technology
(46)
Male
(38)
Physical Sciences
(38)
Physics
(34)
Biological And Medical Sciences
(33)
Animals
(32)
Engineering
(32)
Female
(28)
Engineering, Electrical & Electronic
(27)
Medical Sciences
(25)
Vertical Cavity Surface Emitting Lasers
(24)
Middle Aged
(23)
Physics, Applied
(22)
Adult
(21)
Aged
(20)
Surface Emitting Lasers
(20)
Quantum Dots
(19)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

Immediate effect of scapular stabilisation exercises on shoulder and forearm muscles activation while playing the violin

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

Dynamic Characteristics and Linewidth Enhancement Factor of Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

High-Power Single-Mode Submonolayer Quantum-Dot Photonic Crystal Vertical-Cavity Surface-Emitting Lasers

Singlemode (SMSR >40 dB) proton- implanted photonic crystal vertical-cavity surface-emitting lasers

Single-mode monolithic quantum-dot VCSEL in 1.3 [mu]m with sidemode suppression ratio over 30 dB

1.3-[mu]m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Near-field magneto-photoluminescence of quantum-dot-like composition fluctuations in GaAsN and InGaAsN alloys

In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface

Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection

1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Single-mode monolithic quantum-dot VCSEL in 1.3 μm with sidemode suppression ratio over 30 dB

Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy

Singlemode InAs quantum dot photonic crystal VCSELs

High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy

Tunable optical group delay in quantum dot vertical-cavity surface-emitting laser at 10 GHz

Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB

1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Optical and deep-level spectroscopic study on In 0.38GaAsN x /GaAs single-quantum-well structures of x⩾3% grown by molecular beam epitaxy

1.3 [micro sign]m quantum dot vertical-cavity surface-emitting laser with external light injection

Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

High-power (200 mW) singlemode operation of InGaAsN∕GaAs ridge waveguide lasers with wavelength around 1.3 [micro sign]m

Polarization switching in 1.3-µm quantum dot vertical cavity surface emitting lasers

Suchergebnisse filtern