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GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

IEEE photonics technology letters, 2001-08, Vol.13 (8), p.848-850

2001

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Immediate effect of scapular stabilisation exercises on shoulder and forearm muscles activation while playing the violin

Gait & posture, 2020-09, Vol.81, p.303-303

2020

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Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

IEEE journal of quantum electronics, 2006-09, Vol.42 (9), p.851-858

2006

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Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

Journal of lightwave technology, 2008-06, Vol.26 (11), p.1387-1395

2008

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Dynamic Characteristics and Linewidth Enhancement Factor of Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.844-849

2009

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High-Power Single-Mode Submonolayer Quantum-Dot Photonic Crystal Vertical-Cavity Surface-Emitting Lasers

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1318-1323

2007

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Singlemode (SMSR >40 dB) proton- implanted photonic crystal vertical-cavity surface-emitting lasers

Electronics letters, 2005, Vol.41 (6), p.326-328

2005

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Single-mode monolithic quantum-dot VCSEL in 1.3 [mu]m with sidemode suppression ratio over 30 dB

IEEE photonics technology letters, 2006-04, Vol.18 (7), p.847

2006

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1.3-[mu]m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

IEEE photonics technology letters, 2006-01, Vol.18 (2), p.418

2006

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Near-field magneto-photoluminescence of quantum-dot-like composition fluctuations in GaAsN and InGaAsN alloys

Physica. E, Low-dimensional systems & nanostructures, 2004-03, Vol.21 (2), p.385-389

2004

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In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface

Journal of crystal growth, 2013-05, Vol.371, p.50-55

2013

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Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection

IEEE photonics technology letters, 2010-02, Vol.22 (3), p.179-181

2010

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1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

IEEE photonics technology letters, 2006-01, Vol.18 (2), p.418-420

2006

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Single-mode monolithic quantum-dot VCSEL in 1.3 μm with sidemode suppression ratio over 30 dB

IEEE photonics technology letters, 2006-04, Vol.18 (7), p.847-849

2006

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Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.278-280

2004

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Singlemode InAs quantum dot photonic crystal VCSELs

Electronics letters, 2005-09, Vol.41 (20), p.1130-1132

2005

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High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy

Journal of crystal growth, 2004-02, Vol.262 (1), p.84-88

2004

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Tunable optical group delay in quantum dot vertical-cavity surface-emitting laser at 10 GHz

Electronics letters, 2006-08, Vol.42 (18), p.1036

2006

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Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB

IEEE photonics technology letters, 2006-04, Vol.18 (7), p.847-849

2006

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1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

IEEE photonics technology letters, 2006-01, Vol.18 (2), p.418-420

2006

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Optical and deep-level spectroscopic study on In 0.38GaAsN x /GaAs single-quantum-well structures of x⩾3% grown by molecular beam epitaxy

Journal of crystal growth, 2005, Vol.278 (1), p.575-579

2005

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1.3 [micro sign]m quantum dot vertical-cavity surface-emitting laser with external light injection

Electronics letters, 2005, Vol.41 (22), p.1222

2005

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Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

Applied physics. B, Lasers and optics, 2005-12, Vol.81 (8), p.1097-1100

2005

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High-power (200 mW) singlemode operation of InGaAsN∕GaAs ridge waveguide lasers with wavelength around 1.3 [micro sign]m

Electronics letters, 2003, Vol.39 (24), p.1726

2003

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Polarization switching in 1.3-µm quantum dot vertical cavity surface emitting lasers

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, 2009, p.1-2

2009

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GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

Immediate effect of scapular stabilisation exercises on shoulder and forearm muscles activation while playing the violin

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

Dynamic Characteristics and Linewidth Enhancement Factor of Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

High-Power Single-Mode Submonolayer Quantum-Dot Photonic Crystal Vertical-Cavity Surface-Emitting Lasers

Singlemode (SMSR >40 dB) proton- implanted photonic crystal vertical-cavity surface-emitting lasers

Single-mode monolithic quantum-dot VCSEL in 1.3 [mu]m with sidemode suppression ratio over 30 dB

1.3-[mu]m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Near-field magneto-photoluminescence of quantum-dot-like composition fluctuations in GaAsN and InGaAsN alloys

In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface

Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection

1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Single-mode monolithic quantum-dot VCSEL in 1.3 μm with sidemode suppression ratio over 30 dB

Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxy

Singlemode InAs quantum dot photonic crystal VCSELs

High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy

Tunable optical group delay in quantum dot vertical-cavity surface-emitting laser at 10 GHz

Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB

1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Optical and deep-level spectroscopic study on In 0.38GaAsN x /GaAs single-quantum-well structures of x⩾3% grown by molecular beam epitaxy

1.3 [micro sign]m quantum dot vertical-cavity surface-emitting laser with external light injection

Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

High-power (200 mW) singlemode operation of InGaAsN∕GaAs ridge waveguide lasers with wavelength around 1.3 [micro sign]m

Polarization switching in 1.3-µm quantum dot vertical cavity surface emitting lasers

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