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Associations with baseline visual acuity in 12,414 eyes starting treatment for neovascular AMD

Eye (London), 2023-06, Vol.37 (8), p.1652-1658

2023

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The doping process and dopant characteristics of GaN

Journal of physics. Condensed matter, 2002-06, Vol.14 (22), p.R657-R702, Article 201

2002

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Associations with visual acuity outcomes after 12 months of treatment in 9401 eyes with neovascular AMD

BMJ open ophthalmology, 2022-06, Vol.7 (1), p.e001038

2022

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White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

IEEE photonics technology letters, 2003-01, Vol.15 (1), p.18-20

2003

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IEEE_Xplore

Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

IEEE electron device letters, 2011-08, Vol.32 (8), p.1098-1100

2011

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IEEE_Xplore

Dip Pen Nanolithography of Conductive Silver Traces

Journal of physical chemistry. C, 2010-06, Vol.114 (21), p.9672-9677

2010

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Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template

IEEE photonics technology letters, 2010-02, Vol.22 (4), p.257-259

2010

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IEEE_Xplore

GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

IEEE photonics technology letters, 2001-08, Vol.13 (8), p.848-850

2001

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IEEE_Xplore

Development of global health education at Johns Hopkins University School of Medicine: a student-driven initiative

Medical education online, 2015-01, Vol.20 (1), p.28632-28632

2015

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Oxygen sensors made by monolayer graphene under room temperature

Applied physics letters, 2011-12, Vol.99 (24), p.243502

2011

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Optical and structural properties of Eu-diffused and doped ZnO nanowires

Applied surface science, 2009-10, Vol.256 (1), p.187-190

2009

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Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers

IEEE electron device letters, 2011-10, Vol.32 (10), p.1400-1402

2011

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IEEE_Xplore

Effects of rapid thermal annealing on the structural properties of TiO2 nanotubes

Applied surface science, 2011-10, Vol.258 (1), p.530-534

2011

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Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2005-08, Vol.282 (1), p.112-116

2005

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High-transparency Ni/Au ohmic contact to p -type GaN

Applied physics letters, 1999-04, Vol.74 (16), p.2340-2342

1999

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Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition

Journal of crystal growth, 2009, Vol.311 (2), p.249-253

2009

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Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer

IEEE electron device letters, 2004-09, Vol.25 (9), p.593-595

2004

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IEEE_Xplore

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

IEEE electron device letters, 2003-04, Vol.24 (4), p.212-214

2003

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IEEE_Xplore

Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

IEEE journal of quantum electronics, 2010-03, Vol.46 (3), p.391-395

2010

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IEEE_Xplore

Structural and optical properties of ZnO epilayers grown by plasma-assisted molecular beam epitaxy on GaN/sapphire (0 0 0 1)

Journal of crystal growth, 2007-07, Vol.305 (1), p.133-136

2007

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Partnerships for community resilience: perspectives from the Los Angeles County Community Disaster Resilience project

Public health (London), 2015-09, Vol.129 (9), p.1297-1300

2015

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Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

Applied physics letters, 1998-06, Vol.72 (25), p.3317-3319

1998

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Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition

Applied surface science, 2009-05, Vol.255 (15), p.6809-6813

2009

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Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition

Journal of crystal growth, 2008-10, Vol.310 (20), p.4456-4459

2008

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Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

Journal of physics. Condensed matter, 2006-10, Vol.18 (42), p.L543-L549

2006

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Associations with baseline visual acuity in 12,414 eyes starting treatment for neovascular AMD

The doping process and dopant characteristics of GaN

Associations with visual acuity outcomes after 12 months of treatment in 9401 eyes with neovascular AMD

White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

Dip Pen Nanolithography of Conductive Silver Traces

Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template

GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

Development of global health education at Johns Hopkins University School of Medicine: a student-driven initiative

Oxygen sensors made by monolayer graphene under room temperature

Optical and structural properties of Eu-diffused and doped ZnO nanowires

Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers

Effects of rapid thermal annealing on the structural properties of TiO2 nanotubes

Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy

High-transparency Ni/Au ohmic contact to p -type GaN

Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition

Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Structural and optical properties of ZnO epilayers grown by plasma-assisted molecular beam epitaxy on GaN/sapphire (0 0 0 1)

Partnerships for community resilience: perspectives from the Los Angeles County Community Disaster Resilience project

Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition

Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition

Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

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