UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 54

Sortiert nach

A Bluetooth Low-Energy Transceiver With 3.7-mW All-Digital Transmitter, 2.75-mW High-IF Discrete-Time Receiver, and TX/RX Switchable On-Chip Matching Network

IEEE journal of solid-state circuits, 2017-04, Vol.52 (4), p.1144-1162

2017

Volltextzugriff (PDF)

A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm

IEEE journal of solid-state circuits, 2016-07, Vol.51 (7), p.1547-1565

2016

Volltextzugriff (PDF)

A Wideband Low Noise Amplifier With 4 kV HBM ESD Protection in 65 nm RF CMOS

IEEE microwave and wireless components letters, 2009-11, Vol.19 (11), p.734-736

2009

Volltextzugriff (PDF)

A 17.5-26 GHz Low-Noise Amplifier With Over 8 kV ESD Protection in 65 nm CMOS

IEEE microwave and wireless components letters, 2012-09, Vol.22 (9), p.483-485

2012

Volltextzugriff (PDF)

Design of 60-GHz Low-Noise Amplifiers With Low NF and Robust ESD Protection in 65-nm CMOS

IEEE transactions on microwave theory and techniques, 2013-01, Vol.61 (1), p.553-561

2013

Volltextzugriff (PDF)

ESD-Protected K-Band Low-Noise Amplifiers Using RF Junction Varactors in 65-nm CMOS

IEEE transactions on microwave theory and techniques, 2011-12, Vol.59 (12), p.3455-3462

2011

Volltextzugriff (PDF)

A Multi-ESD-Path Low-Noise Amplifier With a 4.3-A TLP Current Level in 65-nm CMOS

IEEE transactions on microwave theory and techniques, 2010-12, Vol.58 (12), p.4004-4011

2010

Volltextzugriff (PDF)

A divider-less sub-harmonically injection-locked PLL with self-adjusted injection timing

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, p.414-415

2013

Volltextzugriff (PDF)

A fully integrated 28nm Bluetooth Low-Energy transmitter with 36% system efficiency at 3dBm

ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC), 2015, p.356-359

2015

Volltextzugriff (PDF)

A V-Band Divide-by-Three Injection-Locked Frequency Divider in 28 nm CMOS

IEEE microwave and wireless components letters, 2012-11, Vol.22 (11), p.592-594

2012

Volltextzugriff (PDF)

A 0.85mm2 51%-Efficient 11-dBm Compact DCO-DPA in 16-nm FinFET for Sub-Gigahertz IoT TX Using HD2 Self-Suppression and Pulling Mitigation

IEEE journal of solid-state circuits, 2019-07, Vol.54 (7), p.2028-2037

2019

Volltextzugriff (PDF)

An All-Digital PLL for Cellular Mobile Phones in 28-nm CMOS with −55 dBc Fractional and −91 dBc Reference Spurs

IEEE transactions on circuits and systems. I, Regular papers, 2018-11, Vol.65 (11), p.3756-3768

2018

Volltextzugriff (PDF)

ESD protection design for wideband RF applications in 65-nm CMOS process

2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2014, p.1480-1483

2014

Volltextzugriff (PDF)

A 53.6 GHz direct injection-locked frequency divider with a 72% locking range in 65 nm CMOS technology

2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013, p.1-3

2013

Volltextzugriff (PDF)

A 77/79-GHz Frequency Generator in 16-nm CMOS for FMCW Radar Applications Based on a 26-GHz Oscillator with Co-Generated Third Harmonic

ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC), 2019, p.53-56

2019

Volltextzugriff (PDF)

A V-band divide-by-three differential direct injection-locked frequency divider in 65-nm CMOS

IEEE Custom Integrated Circuits Conference 2010, 2010, p.1-4

2010

Volltextzugriff (PDF)

A Compact Single-Ended Dual-band Receiver with Crosstalk and ISI Reductions for High-density I/O Interfaces

2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, p.231-234

2019

Volltextzugriff (PDF)

Towards Ultra-Low-Voltage and Ultra-Low-Power Discrete-Time Receivers for Internet-of-Things

2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018, p.1211-1214

2018

Volltextzugriff (PDF)

An extended de-embedding method for on-wafer components

2012 IEEE International Conference on Microelectronic Test Structures, 2012, p.166-168

2012

Volltextzugriff (PDF)

A 0.55THz Y-Vector Network Configured Beam Steering Phased Array in CMOS Technology

2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018, p.587-590

2018

Volltextzugriff (PDF)

Compact and low-loss ESD protection design for V-band RF applications in a 65-nm CMOS technology

2012 IEEE International Symposium on Circuits and Systems (ISCAS), 2012, p.2127-2130

2012

Volltextzugriff (PDF)

A 6.5kV ESD-protected low noise amplifier in 65-nm CMOS

2010 IEEE MTT-S International Microwave Symposium, 2010, p.485-488

2010

Volltextzugriff (PDF)

60GHz high-gain low-noise amplifiers with a common-gate inductive feedback in 65nm CMOS

2011 IEEE Radio Frequency Integrated Circuits Symposium, 2011, p.1-4

2011

Volltextzugriff (PDF)

High-performance integrated fan-out wafer level packaging (InFO-WLP): Technology and system integration

2012 International Electron Devices Meeting, 2012, p.14.1.1-14.1.4

2012

Volltextzugriff (PDF)

An 8Gb/s/pin 4pJ/b/pin Single-T-Line dual (base+RF) band simultaneous bidirectional mobile memory I/O interface with inter-channel interference suppression

2012 IEEE International Solid-State Circuits Conference, 2012, p.50-52

2012

Volltextzugriff (PDF)

1 – 25 von 54

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(14)
Mit Volltextzugriff
(46)

Publikationsform

Tagungsberichte
(40)
Artikel
(14)

Sprache

Englisch
(54)
Japanisch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(27)
Technology
(27)
Engineering
(25)
Engineering, Electrical & Electronic
(25)
Radio Frequency
(24)
Cmos Integrated Circuits
(21)
Cmos
(15)
Electrostatic Discharge
(14)
Electrostatic Discharges
(12)
Inductors
(12)
Low-Noise Amplifier
(9)
Capacitors
(8)
Integrated Circuits
(8)
Phase Noise
(8)
Amplifiers
(7)
Cmos Technology
(7)
Noise Measurement
(7)
Low-Noise Amplifiers
(6)
Noise
(6)
Phase Locked Loops
(6)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Zeitschrift / Serie

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

A Bluetooth Low-Energy Transceiver With 3.7-mW All-Digital Transmitter, 2.75-mW High-IF Discrete-Time Receiver, and TX/RX Switchable On-Chip Matching Network

A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm

A Wideband Low Noise Amplifier With 4 kV HBM ESD Protection in 65 nm RF CMOS

A 17.5-26 GHz Low-Noise Amplifier With Over 8 kV ESD Protection in 65 nm CMOS

Design of 60-GHz Low-Noise Amplifiers With Low NF and Robust ESD Protection in 65-nm CMOS

ESD-Protected K-Band Low-Noise Amplifiers Using RF Junction Varactors in 65-nm CMOS

A Multi-ESD-Path Low-Noise Amplifier With a 4.3-A TLP Current Level in 65-nm CMOS

A divider-less sub-harmonically injection-locked PLL with self-adjusted injection timing

A fully integrated 28nm Bluetooth Low-Energy transmitter with 36% system efficiency at 3dBm

A V-Band Divide-by-Three Injection-Locked Frequency Divider in 28 nm CMOS

A 0.85mm2 51%-Efficient 11-dBm Compact DCO-DPA in 16-nm FinFET for Sub-Gigahertz IoT TX Using HD2 Self-Suppression and Pulling Mitigation

An All-Digital PLL for Cellular Mobile Phones in 28-nm CMOS with −55 dBc Fractional and −91 dBc Reference Spurs

ESD protection design for wideband RF applications in 65-nm CMOS process

A 53.6 GHz direct injection-locked frequency divider with a 72% locking range in 65 nm CMOS technology

A 77/79-GHz Frequency Generator in 16-nm CMOS for FMCW Radar Applications Based on a 26-GHz Oscillator with Co-Generated Third Harmonic

A V-band divide-by-three differential direct injection-locked frequency divider in 65-nm CMOS

A Compact Single-Ended Dual-band Receiver with Crosstalk and ISI Reductions for High-density I/O Interfaces

Towards Ultra-Low-Voltage and Ultra-Low-Power Discrete-Time Receivers for Internet-of-Things

An extended de-embedding method for on-wafer components

A 0.55THz Y-Vector Network Configured Beam Steering Phased Array in CMOS Technology

Compact and low-loss ESD protection design for V-band RF applications in a 65-nm CMOS technology

A 6.5kV ESD-protected low noise amplifier in 65-nm CMOS

60GHz high-gain low-noise amplifiers with a common-gate inductive feedback in 65nm CMOS

High-performance integrated fan-out wafer level packaging (InFO-WLP): Technology and system integration

An 8Gb/s/pin 4pJ/b/pin Single-T-Line dual (base+RF) band simultaneous bidirectional mobile memory I/O interface with inter-channel interference suppression

Suchergebnisse filtern