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AlGaInN LED Pump System for Ti:Sapphire Lasers

2022 International Conference Laser Optics (ICLO), 2022, p.1-1

2022

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The impact of the surface morphology on optical features of the green emitting InGaN/GaN multiple quantum wells

Journal of crystal growth, 2019-08, Vol.520, p.82-84

2019

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Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds

Journal of applied spectroscopy, 2023-03, Vol.90 (1), p.24-28

2023

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High-Power AlGaInN LEDs Operated Under High Pulsed Current Density (up to 7 kA/cm2)

2020 International Conference Laser Optics (ICLO), 2020, p.1-1

2020

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High-Speed Bridge Photodetectors for the Mid-IR Spectral Region

Journal of applied spectroscopy, 2023-03, Vol.90 (1), p.92-97

2023

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Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs

Journal of crystal growth, 2014-09, Vol.401, p.302-304

2014

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Specific of a photocurrent in GaN-based photoelectrochemical cell

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12108

2016

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On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1173-1179

2016

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Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

Semiconductors (Woodbury, N.Y.), 2018-07, Vol.52 (7), p.942-949

2018

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Failure mechanisms in blue InGaN/GaN LEDs for high power operation

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2180-2183

2012

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Study of the capabilities of high-power UV and Blue LEDs for Pumping Coumarin Dyes laser

2024 International Conference Laser Optics (ICLO), 2024, p.140-140

2024

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Two channels of non-radiative recombination in InGaN/GaN LEDs

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4896-4898

2009

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Thermal resistanse and nonuniform distribution of electroluminescence and temperature in high-power AlGaInN light-emitting diodes

St. Petersburg Polytechnical University Journal. Physics and Mathematics, 2015-06, Vol.1 (2), p.151-158

2015

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Thermal resistanсe and nonuniform distribution of electroluminescence and temperature in high-power AlGaInN light-emitting diodes

St. Petersburg State Polytechnical University Journal. Physics and Mathematics, 2015-06, Vol.218 (2), p.74-83

2015

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Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount

Semiconductors (Woodbury, N.Y.), 2013-03, Vol.47 (3), p.409-414

2013

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High-power AlGaInN LED chips with two-level metallization

Semiconductors (Woodbury, N.Y.), 2014-09, Vol.48 (9), p.1254-1259

2014

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Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs

Semiconductors (Woodbury, N.Y.), 2012-02, Vol.46 (2), p.208-212

2012

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A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.373-379

2010

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The limiting energy capabilities of high-power AlInGaN LEDs

Technical Physics Letters, 2022, Vol.48 (7), p.29

2022

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Study of mechanisms responsible for the efficiency degradation of the III-nitrides light emitting diodes

Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki, 2015-02, p.46-53

2015

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Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C

Semiconductors (Woodbury, N.Y.), 2012-05, Vol.46 (5), p.690-695

2012

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Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current

Semiconductors (Woodbury, N.Y.), 2011-03, Vol.45 (3), p.415-421

2011

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Monolithic white LEDs: Approaches, technology, design

Surface investigation, x-ray, synchrotron and neutron techniques, 2012-05, Vol.6 (3), p.501-504

2012

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Dynamic Thermal Analysis of "vertical" and "faceup" High-Power AlGaInN LEDs at Pulse Operation

2018 International Conference Laser Optics (ICLO), 2018, p.162-162

2018

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Nonradiative recombination dynamics in InGaN/GaN LED defect system

Superlattices and microstructures, 2009-04, Vol.45 (4), p.301-307

2009

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AlGaInN LED Pump System for Ti:Sapphire Lasers

The impact of the surface morphology on optical features of the green emitting InGaN/GaN multiple quantum wells

Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds

High-Power AlGaInN LEDs Operated Under High Pulsed Current Density (up to 7 kA/cm2)

High-Speed Bridge Photodetectors for the Mid-IR Spectral Region

Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs

Specific of a photocurrent in GaN-based photoelectrochemical cell

On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

Failure mechanisms in blue InGaN/GaN LEDs for high power operation

Study of the capabilities of high-power UV and Blue LEDs for Pumping Coumarin Dyes laser

Two channels of non-radiative recombination in InGaN/GaN LEDs

Thermal resistanse and nonuniform distribution of electroluminescence and temperature in high-power AlGaInN light-emitting diodes

Thermal resistanсe and nonuniform distribution of electroluminescence and temperature in high-power AlGaInN light-emitting diodes

Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount

High-power AlGaInN LED chips with two-level metallization

Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs

A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy

The limiting energy capabilities of high-power AlInGaN LEDs

Study of mechanisms responsible for the efficiency degradation of the III-nitrides light emitting diodes

Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C

Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current

Monolithic white LEDs: Approaches, technology, design

Dynamic Thermal Analysis of "vertical" and "faceup" High-Power AlGaInN LEDs at Pulse Operation

Nonradiative recombination dynamics in InGaN/GaN LED defect system

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