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Advanced Heterostructure Si-InSb on Insulator Formed by Bonding of Hydrogen Transferred Si Layer and Implanted SiO2 Film

ECS transactions, 2007, Vol.6 (4), p.345-350

2007

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Behavior of germanium ion-implanted into SiO{sub 2} near the bonding interface of a silicon-on-insulator structure

Semiconductors (Woodbury, N.Y.), 2007-03, Vol.41 (3)

2007

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Behavior of germanium ion-implanted into SiO2 near the bonding interface of a silicon-on-insulator structure

Semiconductors (Woodbury, N.Y.), 2007-03, Vol.41 (3), p.291-296

2007

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The Clusters Self-Assembled Crystal and Magnetic Structure During the Martensite Transition in Fe86mn13c Alloy

Journal of Siberian Federal University. Engineering & Technologies, 2015-01, Vol.8 (1), p.48-56

2015

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Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Journal of structural chemistry, 2017-12, Vol.58 (8), p.1581-1587

2017

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Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Žurnal strukturnoj himii, 2017, Vol.58 (8), p.1631-1637

2017

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Consecutive stages of redistribution of oxygen implanted in silicon heavily doped with boron

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-10, Vol.251 (2), p.445-450

2006

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Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions

Semiconductors (Woodbury, N.Y.), 2013-05, Vol.47 (5), p.606-611

2013

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Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure

Solid state phenomena, 2008-01, Vol.131-133, p.137-142

2008

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Diffusion-Controlled growth of Ge nanocrystals in SiO{sub 2} films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10)

2017

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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1364-1369

2017

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The effect of composition on the formation of light-emitting Si nanostructures in SiO x layers on irradiation with swift heavy ions

Semiconductors (Woodbury, N.Y.), 2011-03, Vol.45 (3), p.408-414

2011

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The effect of composition on the formation of light-emitting Si nanostructures in SiO{sub x} layers on irradiation with swift heavy ions

Semiconductors (Woodbury, N.Y.), 2011-03, Vol.45 (3)

2011

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The effect of composition on the formation of light-emitting Si nanostructures in SiOx layers on irradiation with swift heavy ions

Semiconductors (Woodbury, N.Y.), 2011-03, Vol.45 (3)

2011

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Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Semiconductors (Woodbury, N.Y.), 2008, Vol.42 (9), p.1127-1131

2008

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Effect of the Ni/Al 2 O 3 Catalyst Synthesis Conditions at Application of the Solution Combustion Preparation Method on the Catalyst’s Properties and Efficiency in the Process of Nanofibrous Carbons Synthesis from Methane

Advanced science letters, 2018-12, Vol.24 (12), p.9602-9604

2018

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Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1360-1363

2009

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Endotaxial growth of InSb nanocrystals at the bonding interface of the In super(+) and Sb super(+) ion implanted SOI structure

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1360-1363

2009

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Endotaxial growth of InSb nanocrystals at the bonding interface of the In@u+ and Sb@u+ ion implanted SOI structure

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1360-1363

2009

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Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing

Solid state communications, 2016-12, Vol.247, p.53-57

2016

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Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Surface & coatings technology, 2003, Vol.174-75, p.1178-1181

2003

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Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Surface & coatings technology, 2003-09, Vol.174, p.1178-1181

2003

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Fabrication and preliminary testing of regular microporous membranes manufactured by deep X-ray lithography at the VEPP-3 storage ring

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1995-05, Vol.359 (1), p.404-408

1995

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Femtosecond and Nanosecond Laser Pulse Crystallization of Thin a-Si:H Films on Non-Refractory Glass Substrates

Solid state phenomena, 2008-01, Vol.131-133, p.479-484

2008

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Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

JETP letters, 2011-07, Vol.93 (10), p.603-606

2011

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Advanced Heterostructure Si-InSb on Insulator Formed by Bonding of Hydrogen Transferred Si Layer and Implanted SiO2 Film

Behavior of germanium ion-implanted into SiO{sub 2} near the bonding interface of a silicon-on-insulator structure

Behavior of germanium ion-implanted into SiO2 near the bonding interface of a silicon-on-insulator structure

The Clusters Self-Assembled Crystal and Magnetic Structure During the Martensite Transition in Fe86mn13c Alloy

Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Consecutive stages of redistribution of oxygen implanted in silicon heavily doped with boron

Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions

Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure

Diffusion-Controlled growth of Ge nanocrystals in SiO{sub 2} films under conditions of ion synthesis at high pressure

Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

The effect of composition on the formation of light-emitting Si nanostructures in SiO x layers on irradiation with swift heavy ions

The effect of composition on the formation of light-emitting Si nanostructures in SiO{sub x} layers on irradiation with swift heavy ions

The effect of composition on the formation of light-emitting Si nanostructures in SiOx layers on irradiation with swift heavy ions

Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Effect of the Ni/Al 2 O 3 Catalyst Synthesis Conditions at Application of the Solution Combustion Preparation Method on the Catalyst’s Properties and Efficiency in the Process of Nanofibrous Carbons Synthesis from Methane

Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure

Endotaxial growth of InSb nanocrystals at the bonding interface of the In super(+) and Sb super(+) ion implanted SOI structure

Endotaxial growth of InSb nanocrystals at the bonding interface of the In@u+ and Sb@u+ ion implanted SOI structure

Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing

Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Fabrication and preliminary testing of regular microporous membranes manufactured by deep X-ray lithography at the VEPP-3 storage ring

Femtosecond and Nanosecond Laser Pulse Crystallization of Thin a-Si:H Films on Non-Refractory Glass Substrates

Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

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