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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1364-1369

2017

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1696-1703

2018

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Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Physics of the solid state, 2008-05, Vol.50 (5), p.962-965

2008

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The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

Journal of physics. Conference series, 2017-05, Vol.857 (1)

2017

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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1240-1246

2017

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Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1−x) films: structure and optical properties

Materials research express, 2017-07, Vol.4 (7), p.75010

2017

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Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Journal of structural chemistry, 2017-12, Vol.58 (8), p.1581-1587

2017

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Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Nanotechnology, 2009-08, Vol.20 (34), p.345702-345702

2009

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Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO2 multilayer heterostructures

Materials research express, 2017-08, Vol.4 (8)

2017

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Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeOx/SiO2 multilayers

Materials research express, 2016-08, Vol.3 (8)

2016

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Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Applied physics. A, Materials science & processing, 2010-03, Vol.98 (4), p.873-877

2010

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Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation

Nanotechnology, 2009-05, Vol.20 (18), p.185401

2009

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The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

Nanotechnology, 2009-03, Vol.20 (9), p.095205

2009

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Structure and optical properties of silicon nanopowders

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.222-225

2008

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Formation of a resonant microcavity in hydrogen ion-implanted silicon-on-insulator structures

Journal of applied physics, 2007-10, Vol.102 (7), p.074312-074312-10

2007

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Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure

Applied physics letters, 2006-07, Vol.89 (1), p.013106-013106-3

2006

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Diffusion-Controlled growth of Ge nanocrystals in SiO{sub 2} films under conditions of ion synthesis at high pressure

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10)

2017

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Silicon shallow doping by erbium and oxygen recoils implantation

Solid state communications, 2016-09, Vol.242, p.41-45

2016

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Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

Journal of luminescence, 2018-12, Vol.204, p.656-662

2018

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Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-08, Vol.222 (3-4), p.497-504

2004

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Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Semiconductors (Woodbury, N.Y.), 2008, Vol.42 (9), p.1127-1131

2008

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO{sub 2} Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13)

2018

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO.sub.2 Surface Films

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1696

2018

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The regularities of phase formation in Fe 3 Si(111)/Si(111) structure at vacuum annealing

Journal of physics. Conference series, 2017-05, Vol.857, p.12053

2017

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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO{sub 2} thin films

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9)

2017

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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

The regularities of phase formation in Fe3Si(111)/Si(111) structure at vacuum annealing

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1−x) films: structure and optical properties

Comparison of structures of gold nanoparticles synthesized by pulsed laser ablation and magnetron sputtering

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO2 multilayer heterostructures

Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeOx/SiO2 multilayers

Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation

The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation

Structure and optical properties of silicon nanopowders

Formation of a resonant microcavity in hydrogen ion-implanted silicon-on-insulator structures

Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure

Diffusion-Controlled growth of Ge nanocrystals in SiO{sub 2} films under conditions of ion synthesis at high pressure

Silicon shallow doping by erbium and oxygen recoils implantation

Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

Implantation of P ions in SiO2 layers with embedded Si nanocrystals

Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO{sub 2} Surface Films

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO.sub.2 Surface Films

The regularities of phase formation in Fe 3 Si(111)/Si(111) structure at vacuum annealing

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO{sub 2} thin films

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